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EP0390404A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Sense amplifier

Assignee: Hughes Microelectronics Ltd
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Filing: 1990-03-20
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Granted: —
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Expires: 2010-03-20
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Abstract

Abstract A sense amplifier for determining the logic state of a memory cell consists of a switch transistor (N2) for receiving current during sensing from the memory cell (NV1), a nonvolatile transistor (NV2) providing a reference current which is compared to a representation of the sensed current through the switch transistor (itself dependent on the state of NV1), a bistable latch (N4P4, N5P5) which is switched into one or other of its states depending on the result of the comparison, and a feedback from the output of the latch (NODE 3) to the gate of the switch transistor (N2) to isolate the amplifier from the memory cell after sensing.

Inventors

  • 👤 Andrew Michael Lever

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-10-26 02:41
CPC Classifications
G; G11; G11C; G11C16/00; G11C16/02; G11C16/06; G11C16/26; G11C16/28; G11C7/00; G11C7/06; G11C7/062; G11C2207/00; G11C2207/06; G11C2207/063

Claims Analysis

Total Claims: 9
Claim 1
Independent Claim 167 words
A sense amplifier for determining the logic state of a semiconductor memory cell, comprising: switch means for receiving the current passing through said memory cell, said current being at one level representing one logic state of the cell or at a second level, higher than the first level, representing a second logic state of the cell; comparing means for comparing a representation of said current with a reference current to provide first or second comparison outputs dependent on whether the representation current is above or below said reference current respectively; latch means responsive to the output of the comparing means and latching into a first output state in response to one of said comparison output states; and feedback means from the output of the latch means to the switch means for switching off the latter to isolate the amplifier in its latched first output state from the memory cell when the current received by the switch means from the memory cell is at said second higher level.
Claim 2
Dependent Claim 167 words
A sense amplifier for determining the logic state of a semiconductor memory cell, comprising: switch means for receiving the current passing through said memory cell, said current being at one level representing one logic state of the cell or at a second level, higher than the first level, representing a second logic state of the cell; comparing means for comparing a representation of said current with a reference current to provide first or second comparison outputs dependent on whether the representation current is above or below said reference current respectively; latch means responsive to the output of the comparing means and latching into a first output state in response to one of said comparison output states; and feedback means from the output of the latch means to the switch means for switching off the latter to isolate the amplifier in its latched first output state from the memory cell when the current received by the switch means from the memory cell is at said second higher level.
Claim 3
Dependent Claim 35 words
An amplifier according to claim 1 which comprises means for providing a representation current which is higher than said reference current when the current received by said switch means is at said second, higher level.
Claim 4
Dependent Claim 25 words
An amplifier according to claim 2 wherein the switch means is connected to a current mirror which supplies said representation current to said comparing means.
Claim 5
Dependent Claim 30 words
An amplifier according to any of claims 1 to 3 wherein said comparing means comprises a floating gate transistor and means for biasing said transistor to provide said reference current.
Claim 6
Dependent Claim 31 words
An amplifier according to any of claims 1 to 4 wherein said switch means comprises an MOS transistor and said feedback means is connected to a control gate of said transistor.
Claim 7
Dependent Claim 45 words
An amplifier according to any of claims 1 to 5 wherein the output of said latch means is connected to the control gates of a pair of series CMOS transistors and wherein the output of said amplifier is provided at the junction of said transistors.
Claim 8
Dependent Claim 41 words
An amplifier according to any of claims 1 to 6 in combination with a plurality of memory cells connected to said switch means, select means being provided to enable any one of said memory cells to pass current to said amplifier.
Claim 9
Dependent Claim 20 words
A combination according to claim 7 wherein each memory cell comprises a floating gate non-volatile transistor as its memory element.

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