Patent EP0387834A2 successfully refreshed from Google Patents.
EP0387834A2
Expired / Lapsed
EP
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Semiconductor structure for processing and storing of information
Assignee: Toshiba Corp
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Filing: 1990-03-14
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Granted: —
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Expires: 2010-03-14
Abstract
Abstract A semiconductor device has a first functional block (202) for performing data processing and a second functional block (206, 302) for storing various information necessary for performing the data processing. The first functional block and a functional element section of the second functional block are directly formed on the semiconductor substrate (100). A memory cell array of the second functional block is formed above the first functional block and the like with a passivation film (110) interposed therebetween. The memory cell array has conductive wires (112) in the X direction and conductive wires (115) in the Y direction. The conductive wires in the X and Y directions are previously made conductive at optional three-dimensional intersections therebetween to thus form a mask ROM. An insulating film which is destroyed upon the application of a voltage is formed at the three-dimensional intersections to thus form a PROM. A ferroelectric member (117) which is polarized in accordance with an applied voltage direction is formed at the three-dimensional intersections to thus form an EEPROM.
Inventors
- 👤 Masashi Wada
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 19:47
CPC Classifications
H; H10; H10B; H10B53/00; H10B53/30; H10B20/00; H10B20/60; H10B20/65
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
107 words
A semiconductor device comprising: a semiconductor substrate (100); a first functional block (202) formed directly on said semiconductor substrate (100) for performing data processing; a second functional block (206, 302) for previously storing information necessary for performing said data processing, said second functional block including a memory cell array (302) having a plurality of memory cells and a functional element section (206) at least for reading data from said memory cell array, said functional element section being formed directly on said semiconductor substrate, and said memory cell array being formed above said first functional block and functional element section with an insulating passivation film (110) interposed therebetween.
Claim 2
Dependent Claim
107 words
A semiconductor device comprising: a semiconductor substrate (100); a first functional block (202) formed directly on said semiconductor substrate (100) for performing data processing; a second functional block (206, 302) for previously storing information necessary for performing said data processing, said second functional block including a memory cell array (302) having a plurality of memory cells and a functional element section (206) at least for reading data from said memory cell array, said functional element section being formed directly on said semiconductor substrate, and said memory cell array being formed above said first functional block and functional element section with an insulating passivation film (110) interposed therebetween.
Claim 3
Dependent Claim
25 words
A semiconductor device according to claim 1, wherein said first functional block is a CPU (202) and said second functional block is a mask ROM.
Claim 4
Dependent Claim
42 words
A semiconductor device according to claim 1, wherein said first functional block (202) formed directly on said semiconductor substrate (100) and said functional element section of said second functional block (206, 302) formed directly on said semiconductor substrate, each include a transistor.
Claim 5
Dependent Claim
66 words
A semiconductor device according to claim 1, wherein said memory cell array has a plurality of conductive wires (112) in the X direction and conductive wires (115) in the Y direction, respectively to be selected by a decoder, said conductive wires in the X and Y directions being formed as two upper and lower layers with an insulating film (113) interposed therebetween, and being three-dimensionally intersected.
Claim 6
Dependent Claim
45 words
A semiconductor device according to claim 4, wherein said second functional block is a mask ROM, wherein said conductive wires (112, 115) in the X and Y directions are electrically interconnected at optional three-dimensional intersections therebetween, in accordance with said information to be previously stored.
Claim 7
Dependent Claim
68 words
A semiconductor device according to claim 4, wherein said second functional block is a PROM, wherein said conductive wires (112, 115) in the X and Y directions face each other at three-dimensional intersections therebetween with an insulating film (113c) interposed therebetween, said insulating film being destroyed and made electrically conductive by applying a voltage between said conductive wires in the X and Y directions forming said three-dimensional intersections.
Claim 8
Dependent Claim
43 words
A semiconductor device according to claim 6, wherein said voltage for destroying said insulating film (113c) has a value of applying more than 5 MV/cm in the direction of facing said conductive wires (112, 115) in the X and Y directions each other.
Claim 9
Dependent Claim
68 words
A semiconductor device according to claim 4, wherein said second functional block is an EEPROM, wherein said conductive wires (112, 115) in the X and Y directions face each other at three-dimensional intersections with a ferroelectric member (117) interposed therebetween, said ferroelectric member being polarized in the direction of a voltage which is applied between said conductive wires in the X and Y directions forming said three-dimensional intersections.
Claim 10
Dependent Claim
15 words
A semiconductor device according to claim 8, wherein said ferroelectric member (117) is barium titanate.
Claim 11
Dependent Claim
18 words
A semiconductor device according to claim 8, wherein said ferroelectric member (117) is lead titanate zirconate (PZT: PbTiO₃-PbZrO₃).
References Cited (Backward Citations)
No citation records indexed.
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