Patent US4198285A successfully refreshed from Google Patents.
Patent EP0385388A2 successfully refreshed from Google Patents.
EP0385388A2
Expired / Lapsed
EP
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Ridge-waveguide semiconductor laser
Assignee: Omron Corp
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Filing: 1990-02-27
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Granted: —
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Expires: 2010-02-27
Abstract
Abstract A semiconductor laser includes a substrate (11) on which there are successively formed a first cladding layer(12), an active layer (13), a second cladding layer (14), an etching-stop layer (15) exhibiting little absorptivity with respect to light emitting by the active layer, and a third cladding layer (16). The third cladding layer is etched away down to the etching-stop layer with the exception of a ridge portion of the third cladding layer.
Inventors
- 👤 Fumihiko C/O Omron Corporation Sato
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 09:51
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/223; H01S5/2231; H01S5/2054; H01S5/2081; H01S5/209; H01S5/2205; H01S5/2213; H01S5/30; H01S5/32; H01S5/323; H01S5/32308; H01S5/32316
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
90 words
A semiconductor laser comprising: a substrate; a first cladding layer formed on said substrate; an active layer formed on said first cladding layer; a second cladding layer formed on said active layer; an etching-stop layer formed on said second cladding layer and exhibiting little absorptivity with respect to light emitting by said active layer; and a third cladding layer formed on said etching-stop layer; said third cladding layer being etched away down to said etching-stop layer in such a manner that a ridge portion of said third cladding layer remains.
Claim 2
Dependent Claim
90 words
A semiconductor laser comprising: a substrate; a first cladding layer formed on said substrate; an active layer formed on said first cladding layer; a second cladding layer formed on said active layer; an etching-stop layer formed on said second cladding layer and exhibiting little absorptivity with respect to light emitting by said active layer; and a third cladding layer formed on said etching-stop layer; said third cladding layer being etched away down to said etching-stop layer in such a manner that a ridge portion of said third cladding layer remains.
Claim 3
Dependent Claim
37 words
The semiconductor layer according to claim 1, wherein a cap layer is formed on said third cladding layer, and said cap layer and said third cladding layer are removed by etching and the ridge portion thereof remains.
Claim 4
Dependent Claim
28 words
The semiconductor layer according to claim 1, wherein the periphery of the ridge portion of said third cladding layer is filled with an insulating layer or high-resistance layer
Claim 5
Dependent Claim
68 words
A ridge-waveguide semiconductor laser comprising: an active layer; a first cladding layer provided on one side of said active layer; a second cladding layer provided on another side of said active layer; an etching-stop layer which will not absorb light provided on said second cladding layer; and a third cladding layer provided on said etching-stop layer; said third cladding layer being etched away leaving a portion thereof behind.
Claim 6
Dependent Claim
68 words
A ridge-waveguide semiconductor laser comprising: an active layer; a first cladding layer provided on one side of said active layer; a second cladding layer provided on another side of said active layer; an etching-stop layer which will not absorb light provided on said second cladding layer; and a third cladding layer provided on said etching-stop layer; said third cladding layer being etched away leaving a portion thereof behind.
References Cited (Backward Citations)
No citation records indexed.
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