Patent EP0384756A2 successfully refreshed from Google Patents.
EP0384756A2
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Semiconductor laser device
Assignee: Toshiba Corp
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Filing: 1990-02-22
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Granted: —
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Expires: 2010-02-22
Abstract
Abstract A semiconductor laser device including a semiconductor substrate (12) of a first conductivity type, a double hetero structure, including a lower cladding layer (14) of the first conductivity type, an active layer, and a first upper cladding layer (16) of In 1-w (Ga 1-y Aℓ y )wP of the second conductivity type formed on the semiconductor substrate (12), a second upper cladding layer (17) of In 1-w (Ga 1-x Aℓ z ) w P of the second conductivity type partially formed on the first upper cladding layer (16), a first contact layer (18) of In 1-w (Ga 1-s Aℓ s ) w P (0 ≦ s < z ≦ 1) of the second conductivity type formed on the second upper cladding layer (17), and a second contact layer (19) of GaAs of the second conductivity type formed on the first upper clad layer (16) and the first contact layer (18). The value of y in In 1-w (Ga 1-y Aℓ y ) w P which constitutes the first upper cladding layer (16), and the value of z in In 1-w (Ga 1-z Aℓ z ) w P which constitutes the second upper cladding layer (17) satisfy a relation 0.6≦ y < z ≦ 1.
Inventors
- 👤 Mariko C/O Intellectual Property Div. Suzuki
- 👤 Kazuhiko C/O Intellectual Property Div. Itaya
- 👤 Masayuki C/O Intellectual Property Div. Ishikawa
- 👤 Yukio C/O Intellectual Property Div. Watanabe
- 👤 Genichi C/O Intellectual Property Div. Hatakoshi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-08 11:29
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H01S5/323; H01S5/32308; H01S5/32325; H01S5/20; H01S5/22; H01S5/223; H01S5/2231; H01S5/04; H01S5/042; H01S5/0421; H01S5/2054; H01S5/2081; H01S5/209; H01S5/2205; H01S5/2206; H01S5/221; H01S5/321
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
208 words
A semiconductor laser device comprising a semiconductor substrate (12) of a first conductivity type, a double hetero structure, including a lower cladding layer (14) of the first conductivity type, an active layer (15), and a first upper cladding layer (16) of In 1-w (Ga 1-y Aℓ y ) w P of a second conductivity type, formed on said semiconductor substrate, a second upper cladding layer (17) of In 1-w (Ga 1-z Aℓ z ) w P of the second conductivity type partially formed on said first upper clad layer (16), a first contact layer (18) of In 1-w (Ga 1-s Aℓ s ) w P (0 < s < z < 1) of the second conductivity type formed on said second upper cladding layer (17), and a second contact layer (19) of GaAs of the second conductivity type formed on a first upper cladding layer (17) and said first contact layer (18), wherein the value of y in In 1-w (Ga 1-y Aℓ y ) w P which constitutes said first upper cladding layer (16), and the value of z in In 1-w (Ga 1-z Aℓ z ) w P which constitutes said second upper cladding layer (17) satisfy a relation 0.6 ≦ y < z ≦ 1.
Claim 2
Dependent Claim
208 words
A semiconductor laser device comprising a semiconductor substrate (12) of a first conductivity type, a double hetero structure, including a lower cladding layer (14) of the first conductivity type, an active layer (15), and a first upper cladding layer (16) of In 1-w (Ga 1-y Aℓ y ) w P of a second conductivity type, formed on said semiconductor substrate, a second upper cladding layer (17) of In 1-w (Ga 1-z Aℓ z ) w P of the second conductivity type partially formed on said first upper clad layer (16), a first contact layer (18) of In 1-w (Ga 1-s Aℓ s ) w P (0 < s < z < 1) of the second conductivity type formed on said second upper cladding layer (17), and a second contact layer (19) of GaAs of the second conductivity type formed on a first upper cladding layer (17) and said first contact layer (18), wherein the value of y in In 1-w (Ga 1-y Aℓ y ) w P which constitutes said first upper cladding layer (16), and the value of z in In 1-w (Ga 1-z Aℓ z ) w P which constitutes said second upper cladding layer (17) satisfy a relation 0.6 ≦ y < z ≦ 1.
Claim 3
Dependent Claim
56 words
A device according to claim 1, characterized in that the value of w in In 1-w (Ga 1-y Aℓ y ) w P which constitutes said first upper cladding layer (16) and In 1-w (Ga 1-z Aℓ z ) w P which constitutes said second upper cladding layer (17) satisfies relations 0.50 ≦ w ≦ 0.54.
Claim 4
Dependent Claim
49 words
A device according to claim 1, characterized in that the values of w , s , and z in In 1-w (Ga 1-s Aℓ s ) w P which constitutes said first contact layer (18) satisfy relations 0.50 ≦ w ≦ 0.54, and 0 ≦ s ≦ z ≦1.
Claim 5
Dependent Claim
58 words
A device according to claim 1, characterized by further comprising a layer of In 1-w (Ga 1-u Aℓ u ) w P of the second conductivity type having a thickness of not more than 100 Å on said first upper cladding layer (16), wherein the value of u satisfies a relation 0 ≦ u < z ≦ 1.
Claim 6
Dependent Claim
53 words
A device according to claim 1, characterized by further comprising a layer (23) of In 1-w (Ga 1-u Aℓ u ) w P of the second conductivity type between said first and second upper cladding layers (16, 17), wherein the value of u satisfies a relation 0 ≦ u < z ≦ 1.
Claim 7
Dependent Claim
32 words
A device according to claim 5, characterized by further comprising a semiconductor layer (24) of the first conductivity type between said first upper cladding layer (16) and said second contact layer (25).
Claim 8
Dependent Claim
28 words
A device according to claim 1, further comprising a buffer layer (13) of the first conductivity type between said semiconductor substrate (12) and said lower cladding layer (14).
Claim 9
Dependent Claim
20 words
A device according to claim 7, characterized in that said semiconductor substrate (12) and said buffer layer (13) comprise GaAs.
Claim 10
Dependent Claim
67 words
A device according to claim 1, characterized in that said lower cladding layer comprises In 1-w (Ga 1-v Aℓ v ) w P, said active layer (15) comprises In 1-w (Ga 1-x Aℓ x ) w P, and the values of v , x , and w satisfy relations 0 ≦ x ≦ 1, 0 ≦ x < v ≦ 1, and 0.50 < w < 0.54.
Claim 11
Dependent Claim
33 words
A device according to claim 1, characterized in that first and second electrode layers (20, 21) are formed on a lower surface of said semiconductor substrate and on said second contact layer, respectively.
Claim 12
Dependent Claim
269 words
A semiconductor laser device comprising a semiconductor substrate (12) of a first conductivity type, a double hetero structure, including a lower cladding layer (14) of the first conductivity type, an active layer (15), and a first upper cladding layer (16) of In 1-w (Ga 1-y Aℓ y ) w P of a second conductivity type, formed on said semiconductor substrate (12), an etching stopping layer (23) of In 1-w (Ga 1-u Aℓ u ) w P of the second conductivity type having a thickness of not more than 100 Å on said first upper cladding layer (16), a second upper cladding layer (17) of In 1-w (Ga 1-z Aℓ z ) w P of the second conductivity type partially formed on said etching stopping layer (23), a first contact layer (18) of In 1-w (Ga 1-s Aℓ s ) w P (0 ≦ s < z ≦ 1) of the second conductivity type formed on said second upper cladding layer (17), and a second contact layer (19) of GaAs of the second conductivity type formed on said etching stopping layer (23) and said first contact layer (18), wherein the value of y in In 1-w (Ga 1-y ℓ y ) w P which constitutes said first upper cladding layer (16), the value of u in In 1-w (Ga 1-u Aℓ u ) w P which constitutes said etching stopping layer (23), and the value of z in In 1-w (Ga 1-z Aℓ z ) u P which constitutes said second upper cladding layer (17) satisfy relations 0.6 ≦ y ≦ 1, and 0 ≦ u < z ≦ 1.
Claim 13
Dependent Claim
269 words
A semiconductor laser device comprising a semiconductor substrate (12) of a first conductivity type, a double hetero structure, including a lower cladding layer (14) of the first conductivity type, an active layer (15), and a first upper cladding layer (16) of In 1-w (Ga 1-y Aℓ y ) w P of a second conductivity type, formed on said semiconductor substrate (12), an etching stopping layer (23) of In 1-w (Ga 1-u Aℓ u ) w P of the second conductivity type having a thickness of not more than 100 Å on said first upper cladding layer (16), a second upper cladding layer (17) of In 1-w (Ga 1-z Aℓ z ) w P of the second conductivity type partially formed on said etching stopping layer (23), a first contact layer (18) of In 1-w (Ga 1-s Aℓ s ) w P (0 ≦ s < z ≦ 1) of the second conductivity type formed on said second upper cladding layer (17), and a second contact layer (19) of GaAs of the second conductivity type formed on said etching stopping layer (23) and said first contact layer (18), wherein the value of y in In 1-w (Ga 1-y ℓ y ) w P which constitutes said first upper cladding layer (16), the value of u in In 1-w (Ga 1-u Aℓ u ) w P which constitutes said etching stopping layer (23), and the value of z in In 1-w (Ga 1-z Aℓ z ) u P which constitutes said second upper cladding layer (17) satisfy relations 0.6 ≦ y ≦ 1, and 0 ≦ u < z ≦ 1.
Claim 14
Dependent Claim
56 words
A device according to claim 1, characterized in that the value of w in In 1-w (Ga 1-y Aℓ y ) w P which constitutes said first upper cladding layer (16) and In 1-w (Ga 1-z Aℓ z ) w P which constitutes said second upper cladding layer (17) satisfies relations 0.50 ≦ w ≦ 0.54.
Claim 15
Dependent Claim
49 words
A device according to claim 1, characterized in that the values of w , s , and z in In 1-w (Ga 1-s Aℓ s ) w P which constitutes said first contact layer (18) satisfy relations 0.50 ≦ w ≦ 0.54, and 0 ≦ s ≦ z 1.
Claim 16
Dependent Claim
30 words
A device according to claim 11, characterized by further comprising a buffer layer (13) of the first conductivity type between said semiconductor substrate (12) and said lower cladding layer (14).
Claim 17
Dependent Claim
20 words
A device according to claim 14, characterized in that said semiconductor substrate (12) and said buffer layer (13) comprise GaAs.
Claim 18
Dependent Claim
259 words
A semiconductor laser device comprising a semiconductor substrate (12) of a first conductivity type, a double hetero structure, including a lower cladding layer (14) of the first conductivity type, an active layer (15), and a first upper cladding layer (16) of In 1-w (Ga 1-y Aℓ y ) w P of a second conductivity type, formed on said semiconductor substrate (12), an etching stopping layer (23) of In 1-w (Ga 1-u Aℓ u ) w P of the second conductivity type on said first upper cladding layer (16), a second upper cladding layer (17) of In 1-w (Ga 1-z Aℓ z ) w P of the second conductivity type partially formed on said etching stopping layer (23), a first contact layer (18) of In 1-w (Ga 1-s Aℓ s ) w P (0 ≦ s ≦ z ≦ 1) of the second conductivity type formed on said second upper cladding layer (17), and a second contact layer (19) of GaAs of the second conductivity type formed on said etching stopping layer (23) and said first contact layer (18), wherein the value of y in In 1-w (Ga 1-y Aℓ y ) w P which constitutes said first upper cladding layer (16), the value of u in In 1-w (Ga 1-u Aℓ u ) w P which constitutes said etching stopping layer (23), and the value of z in In 1-w (Ga 1-z Aℓ z ) w P which constitutes said second upper cladding layer (17) satisfy relation 0.6 ≦ y ≦ 1, and 0 ≦ u ≦ z 1.
Claim 19
Dependent Claim
259 words
A semiconductor laser device comprising a semiconductor substrate (12) of a first conductivity type, a double hetero structure, including a lower cladding layer (14) of the first conductivity type, an active layer (15), and a first upper cladding layer (16) of In 1-w (Ga 1-y Aℓ y ) w P of a second conductivity type, formed on said semiconductor substrate (12), an etching stopping layer (23) of In 1-w (Ga 1-u Aℓ u ) w P of the second conductivity type on said first upper cladding layer (16), a second upper cladding layer (17) of In 1-w (Ga 1-z Aℓ z ) w P of the second conductivity type partially formed on said etching stopping layer (23), a first contact layer (18) of In 1-w (Ga 1-s Aℓ s ) w P (0 ≦ s ≦ z ≦ 1) of the second conductivity type formed on said second upper cladding layer (17), and a second contact layer (19) of GaAs of the second conductivity type formed on said etching stopping layer (23) and said first contact layer (18), wherein the value of y in In 1-w (Ga 1-y Aℓ y ) w P which constitutes said first upper cladding layer (16), the value of u in In 1-w (Ga 1-u Aℓ u ) w P which constitutes said etching stopping layer (23), and the value of z in In 1-w (Ga 1-z Aℓ z ) w P which constitutes said second upper cladding layer (17) satisfy relation 0.6 ≦ y ≦ 1, and 0 ≦ u ≦ z 1.
Claim 20
Dependent Claim
32 words
A device according to claim 16, characterized by further comprising a semiconductor layer (24) of the first conductivity type between said first upper cladding layer (16) and said second contact layer (25).
Claim 21
Dependent Claim
56 words
A device according to claim 16, characterized in that the value of w in In 1-w (Ga 1-y Aℓ y ) w P which constitutes said first upper cladding layer (16) and In 1-w (Ga 1-z Aℓ z ) w P which constitutes said second upper cladding layer (17) satisfies relations 0.50 ≦ w ≦ 0.54.
Claim 22
Dependent Claim
49 words
A device according to claim 16, characterized in that the values of w , s , and z in In 1-w (Ga 1-s Aℓ s ) w P which constitutes said first contact layer (18) satisfy relations 0.50 ≦ w ≦ 0.54, and 0 ≦ s ≦ z 1.
Claim 23
Dependent Claim
28 words
A device according to claim 16, further comprising a buffer layer (13) of the first conductivity type between said semiconductor substrate (12) and said lower cladding layer (14).
References Cited (Backward Citations)
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