Patent EP0382929A2 successfully refreshed from Google Patents.
← Back to Patent Explorer
EP0382929A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Voltage regulator circuit

Assignee: Toshiba Corp
•
Filing: 1989-12-15
•
Granted: —
•
Expires: 2009-12-15
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract A voltage regulator circuit for use with an integrated circuit with a charge pump circuit (2) having a voltage output terminal (2a) and a voltage input terminal (1) in which a plurality of voltage regulating P-channel MOS transistors (P2 - P(n-1)), each of which has its source and substrate connected together and its gate and drain connected together, are connected in series between the voltage output and input terminals of the charge pump circuit.

Inventors

  • 👤 Makoto C/O Intellectual Property Division Ito

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-08 17:06
CPC Classifications
G; G05; G05F; G05F3/00; G05F3/02; G05F3/08; G05F3/10; G05F3/16; G05F3/20; G05F3/205; G11; G11C; G11C5/00; G11C5/14; G11C5/147; G05F3/24; G11C16/00; G11C16/02; G11C16/06; G11C16/30; G11C5/145; H; H02; H02M; H02M3/00; H02M3/02; H02M3/04; H02M3/06; H02M3/07; H02M3/073; H10; H10D; H10D89/00; H10D89/60; H10D89/601; H10D89/811; H10D89/819

Claims Analysis

Total Claims: 9
Claim 1
Independent Claim 77 words
A voltage regulator circuit for use with a semiconductor integrated circuit having a charge pump circuit (2) with a voltage output terminal (2a) and a voltage input terminal (1), including a plurality of P-channel MOS transistors (P2 - P(n-1)) connected in series between said voltage output terminal and said voltage input terminal of said charge pump circuit, each of said P-channel MOS transistors having its source and substrate connected together and its gate and drain con­nected together.
Claim 2
Dependent Claim 77 words
A voltage regulator circuit for use with a semiconductor integrated circuit having a charge pump circuit (2) with a voltage output terminal (2a) and a voltage input terminal (1), including a plurality of P-channel MOS transistors (P2 - P(n-1)) connected in series between said voltage output terminal and said voltage input terminal of said charge pump circuit, each of said P-channel MOS transistors having its source and substrate connected together and its gate and drain con­nected together.
Claim 3
Dependent Claim 70 words
A voltage regulator circuit according to claim 1, characterized in that between one end of the series connection of said P-channel MOS transistors and said voltage output terminal (2a) of said charge pump circuit (2) is connected a P-channel MOS transistor (P1) which has its source and substrate connected together and is supplied at its gate with an enable signal syn­chronized with an enable signal for said charge pump circuit.
Claim 4
Dependent Claim 52 words
A voltage regulator circuit according to claim 1, characterized in that between the other end of the series connection of said P-channel MOS transistors and said voltage input terminal of said charge pump cir­cuit is connected a P-channel MOS transistor (Pn) having its substrate, gate and drain connected together or a diode.
Claim 5
Dependent Claim 52 words
A voltage regulator circuit according to claim 2, characterized in that a P-channel MOS transis­tor (Pn) having its substrate, gate and drain connected together or a diode is connected between the other end of the series connection of said P-channel MOS transis­tors and said voltage input terminal of said charge pump circuit.
Claim 6
Dependent Claim 31 words
A voltage regulator circuit according to claim 1, characterized in that said voltage regulator circuit regulates a boosted voltage to be applied to memory cells of a nonvolatile memory integrated circuit.
Claim 7
Dependent Claim 31 words
A voltage regulator circuit according to claim 2, characterized in that said voltage regulator circuit regulates a boosted voltage to be applied to memory cells of a nonvolatile memory integrated circuit.
Claim 8
Dependent Claim 31 words
A voltage regulator circuit according to claim 3, characterized in that said voltage regulator circuit regulates a boosted voltage to be applied to memory cells of a nonvolatile memory integrated circuit.
Claim 9
Dependent Claim 31 words
A voltage regulator circuit according to claim 4, characterized in that said voltage regulator circuit regulates a boosted voltage to be applied to memory cells of a nonvolatile memory integrated circuit.

References Cited (Backward Citations)

No citation records indexed.

USPTO Annuity & Maintenance Windows

Maintenance schedule is calculated for granted US utility patents.

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag