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EP0377408A1 Expired / Lapsed EP ⏱️ 0.0 years remaining

Method of making shaped silicon nitride articles

Assignee: HTM AG
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Filing: 1989-12-21
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Granted: —
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Expires: 2009-12-21
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Abstract

Abstract Reaction-bonded silicon nitride Si3N4 is produced by starting from pure silicon powder or from a powder mixture of pure silicon and its nitride. This is subjected to cold-isostatic pressing or to a slip-casting or die-casting process, before it is transferred into a hot-isostatic press. The reaction is initiated under a nitrogen pressure of initially 0.5 - 2.0 MPa and an initial temperature of 1000 DEG C. During the reaction, the pressure is increased to 4.9 MPa and the temperature is increased to at most 1420 DEG C. This increase in pressure and temperature is effected at least partially in stages. This gives a product of a degree of nitriding of more than 92%. The process permits shaped articles having a wall thickness of more than 10 mm to be produced within a cycle time of less than 24 hours, the material being nitrided evenly.

Inventors

  • 👤 Beat Hofer
  • 👤 Bernhard Einstein

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-08 13:06
CPC Classifications
C; C04; C04B; C04B35/00; C04B35/515; C04B35/58; C04B35/584; C04B35/591; C04B35/593; C04B35/5935

Claims Analysis

Total Claims: 0
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References Cited (Backward Citations)

GB1364716A Cited
FR2337702A1 Cited

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