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EP0377126A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Schottky gate field-effect semiconductor device

Assignee: Toshiba Corp
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Filing: 1989-12-06
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Granted: —
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Expires: 2009-12-06
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Abstract

Abstract A Schottky gate electrode structure of a GaAs field effect semiconductor device comprises a Ti film (14) having a thickness of 2 nm to 25 nm and provided adherently on a GaAs substrate (1) including source and drain regions (3a, 3b), and a refractory electrode film (15) provided on the Ti film (14) and formed of a material selected from W, Mo, Cr, Ta, Nb, V, Hf, Zr, nitrides of these metals, silicides of these metals, carbides of these metals, Ti-W alloys, WSixNy, TiNx, and TiSix. Adhesion of the refractory electrode film to the GaAs substrate is increased, and heat resisting properties of Schottky characteristics are improved according to the thin Ti film.

Inventors

  • 👤 Kizashi Intellectual Property Division Shimada
  • 👤 Tatsuo Intellectual Property Division Akiyama
  • 👤 Yutaka Intellectual Property Division Koshino

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-02 19:46
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6729; H10D30/6737; H10D30/6738; H10D30/674; H10D30/675; H10D64/00; H10D64/60; H10D64/64; H10D62/00; H10D62/80; H10D62/85

Claims Analysis

Total Claims: 4
Claim 1
Independent Claim 52 words
A GaAs field effect semiconductor device including a Schottky gate electrode structure, charac­terized in that said gate electrode structure comprises a Ti film (14) having a thickness of 25 nm or less and provided adherently on a GaAs substrate (1), and a refractory electrode film (15) formed on the Ti film (14).
Claim 2
Dependent Claim 52 words
A GaAs field effect semiconductor device including a Schottky gate electrode structure, charac­terized in that said gate electrode structure comprises a Ti film (14) having a thickness of 25 nm or less and provided adherently on a GaAs substrate (1), and a refractory electrode film (15) formed on the Ti film (14).
Claim 3
Dependent Claim 22 words
The device according to claim 1, characterized in that the thickness of said Ti film (14) is 2 nm to 25 nm.
Claim 4
Dependent Claim 47 words
The device according to claim 1, characterized in that said refractory electrode film (15) is formed of a material selected from W, Mo, Cr, Ta, Nb, V, Hf, Zr, nitrides of these metals, silicides of these metals, carbides of these metals, Ti-W alloys, WSixNy, TiNx, and Tisix.

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