Patent EP0371862A2 successfully refreshed from Google Patents.
EP0371862A2
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Method of forming a nonsilicon semiconductor on insulator structure
Assignee: University of North Carolina at Chapel Hill
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Filing: 1989-11-27
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Granted: —
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Expires: 2009-11-27
Abstract
Abstract A method of forming a nonsilicon semiconductor layer on an insulating layer by forming a thin heteroepitaxial layer (20) of nonsilicon semiconductor on a first substrate (10) having a lattice structure which matches that of the heteroepitaxial layer. A first insulating layer (30) is formed on the heteroepitaxial layer. A second insulating layer (50) is formed on the surface of a second substrate (40). The first and second insulating layers are bonded together to form a unified structure, and the first substrate is etched away. In a preferred embodiment the heteroepitaxial layer is germanium, gallium arsenide or silicon-germanium alloy while the first substrate is silicon, germanium, gallium arsenide or silicon-germanium alloy.
Inventors
- 👤 Chu Wei-Kan
- 👤 Arnold Reisman
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 10:47
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; Y; Y10; Y10S; Y10S148/00; Y10S148/012; Y10S148/059; Y10S148/135
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
69 words
A method of forming a nonsilicon semiconductor layer on an insulating layer comprising the steps of: (a) forming a heteroepitaxial nonsilicon semiconductor layer (20) on a first substrate (10); (b) forming a first insulating layer (30) on said heteroepitaxial nonsilicon semiconductor layer; (c) forming a second insulating layer (50) on a second substrate (40); (d) bonding together said first and second insulating layers; and, (e) removing said first substrate.
Claim 2
Independent Claim
69 words
A method of forming a nonsilicon semiconductor layer on an insulating layer comprising the steps of: (a) forming a heteroepitaxial nonsilicon semiconductor layer (20) on a first substrate (10); (b) forming a first insulating layer (30) on said heteroepitaxial nonsilicon semiconductor layer; (c) forming a second insulating layer (50) on a second substrate (40); (d) bonding together said first and second insulating layers; and, (e) removing said first substrate.
Claim 3
Dependent Claim
23 words
The method of Claim 1 wherein said first substrate is selected from the group consisting of: silicon, germanium, gallium arsenide or silicon-germanium alloy.
Claim 4
Dependent Claim
13 words
The method of Claim 1 wherein said first substrate is a semiconductor material.
Claim 5
Dependent Claim
24 words
The method of Claim 1 wherein said heteroepitaxial nonsilicon semiconductor layer is selected from the group consisting of: germanium, gallium arsenide or silicon-germanium alloy.
Claim 6
Dependent Claim
26 words
The method of Claim 1 wherein said first substrate is a crystalline material having a crystal structure which matches that of said heteroepitaxial nonsilicon semiconductor layer.
Claim 7
Dependent Claim
21 words
The method of Claim 1 wherein step (b) comprises the step of forming a silicon dioxide layer on the heteroepitaxial layer.
Claim 8
Dependent Claim
21 words
The method of Claim 1 wherein step (c) comprises the step of forming a silicon dioxide layer on said second substrate.
Claim 9
Dependent Claim
12 words
The method of Claim 1 wherein said second substrate is crystalline silicon.
Claim 10
Dependent Claim
22 words
The method of Claim 1 wherein said bonding step (d) comprises the step of thermally bonding said first and second insulating layers.
Claim 11
Dependent Claim
45 words
The method of Claim 1 wherein said removing step (e) comprises the step of etching said first substrate with an etchant which does not etch said heteroepitaxial nonsilicon semiconductor layer to thereby etch away said first substrate and stop at said heteroepitaxial nonsilicon semiconductor layer.
Claim 12
Independent Claim
83 words
A method of forming a semiconductor layer on an insulating layer comprising the steps of: (a) forming a heteroepitaxial layer selected from the group consisting of germanium, gallium arsenide or silicon-germanium alloy, on a first substrate selected from the group consisting of silicon, germanium, gallium arsenide or silicon-germanium alloy; (b) forming a first insulating layer on said heteroepitaxial layer; (c) forming a second insulating layer on a second substrate; (d) bonding said first and second insulating layers; and (e) removing said first substrate.
Claim 13
Independent Claim
83 words
A method of forming a semiconductor layer on an insulating layer comprising the steps of: (a) forming a heteroepitaxial layer selected from the group consisting of germanium, gallium arsenide or silicon-germanium alloy, on a first substrate selected from the group consisting of silicon, germanium, gallium arsenide or silicon-germanium alloy; (b) forming a first insulating layer on said heteroepitaxial layer; (c) forming a second insulating layer on a second substrate; (d) bonding said first and second insulating layers; and (e) removing said first substrate.
Claim 14
Dependent Claim
42 words
The method of Claim 11 wherein said heteroepitaxial layer is germanium, wherein said first substrate is silicon and wherein said removing step (e) comprises the step of etching away said first substrate in a solution of ethylene diamine pyrocatechol water 1,4 diazine.
Claim 15
Dependent Claim
43 words
The method of Claim 11 wherein said heteroepitaxial layer is silicon-germanium alloy, wherein said first substrate is silicon and wherein said removing step (e) comprises the step of etching away said first substrate in a solution of ethylene diamine pyrocatechol water 1,4 diazine.
Claim 16
Dependent Claim
40 words
The method of Claim 11 wherein said heteroepitaxial layer is silicon-germanium alloy, wherein said first substrate is gallium arsenide and wherein said removing step (e) comprises the step of etching away said first substrate in a solution of methanol-Br₂ solution.
Claim 17
Dependent Claim
40 words
The method of Claim 11 wherein said heteroepitaxial layer is gallium arsenide, wherein said first substrate is germanium and wherein said removing step (e) comprises the step of etching away said first substrate in a solution of HF, H₂O, H₂O.
Claim 18
Dependent Claim
44 words
The method of Claim 11 wherein said heteroepitaxial layer is germanium, wherein said first substrate is silicon-germanium alloy and wherein said removing step (e) comprises the step of etching away said first substrate in a solution of ethylene diamine pyrocatechol water 1,4 diazine solution.
Claim 19
Independent Claim
77 words
A method of forming a germanium on insulator structure comprising the steps of: (a) implanting germanium under a surface of a silicon first substrate; (b) heating to recrystallize the germanium on said surface of said silicon first substrate while forming a layer of silicon dioxide on the recrystallized germanium layer; (c) forming an insulating layer on a second substrate; (d) bonding together said layer of silicon dioxide and said insulating layer; and (e) removing said first substrate.
Claim 20
Independent Claim
77 words
A method of forming a germanium on insulator structure comprising the steps of: (a) implanting germanium under a surface of a silicon first substrate; (b) heating to recrystallize the germanium on said surface of said silicon first substrate while forming a layer of silicon dioxide on the recrystallized germanium layer; (c) forming an insulating layer on a second substrate; (d) bonding together said layer of silicon dioxide and said insulating layer; and (e) removing said first substrate.
Claim 21
Dependent Claim
12 words
The method of Claim 17 wherein said insulating layer is silicon dioxide.
Claim 22
Dependent Claim
31 words
The method of Claim 17 wherein said removing step (e) comprises the step of etching away said first substrate in a solution of ethylene diamine pyrocatechol water with 1,4 diazine solution.
References Cited (Backward Citations)
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