Patent EP0368651A2 successfully refreshed from Google Patents.
EP0368651A2
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EP
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Epitaxial growth process and growing apparatus
Assignee: Fujitsu Ltd
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Filing: 1989-11-09
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Granted: —
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Expires: 2009-11-09
Abstract
Abstract A process of epitaxially growing a semiconductor Si, Ge or SiGe single crystal layer on a semiconductor (Si or Ge) single crystal substrate, comprising the steps of: allowing a raw material gas (e.g., Si₂H₆ , GeH₄) for the layer and a fluoride gas (e.g., Si₂F₆ , GeF₄ , BF) of at least one element selected from the group consisting of the semiconductor element of the layer and a dopant for the layer to simultaneously flow over the substrate; and applying an ultraviolet light to the substrate to decompose the gases by an ultraviolet light excitation reaction to deposit the layer on the surface of the substrate heated at a temperature of from 250 to 400°C. Prior to the epitaxial growth of the semiconductor layer, the substrate is cleaned by allowing the fluoride gas to flow over the substrate having a temperature of from a room temperature to 500°C, and by irradiating an ultraviolet light to the substrate to remove a natural oxide layer from the substrate surface.
Inventors
- 👤 Ryoichi Mukai
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 15:44
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; C; C30; C30B; C30B25/00; C30B25/02; C30B25/10; C30B25/105; C30B29/00; C30B29/02; C30B29/06; C30B29/08; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3204; H10P14/3211; H10P14/3438; H10P14/3441; H10P14/3444; H10P14/36; H10P14/3602; Y; Y10; Y10S; Y10S117/00; Y10S117/903; Y10S117/904; Y10S148/00; Y10S148/017; Y10S438/00; Y10S438/974
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
58 words
A process of epitaxially growing a semiconductor single crystal layer on a semiconductor single crystal substrate, comprising the steps of: allowing a gas comprising the raw material for the layer and a fluoride gas to flow simultaneously over the substrate; and decomposing the gases by ultraviolet light excitation, to deposit the layer on the surface of the substrate.
Claim 2
Dependent Claim
58 words
A process of epitaxially growing a semiconductor single crystal layer on a semiconductor single crystal substrate, comprising the steps of: allowing a gas comprising the raw material for the layer and a fluoride gas to flow simultaneously over the substrate; and decomposing the gases by ultraviolet light excitation, to deposit the layer on the surface of the substrate.
Claim 3
Dependent Claim
15 words
A process according to claim 1, wherein the substrate is heated at 250 to 400°C.
Claim 4
Dependent Claim
16 words
A process according to claim 1 or claim 2, wherein the substrate is silicon or germanium.
Claim 5
Dependent Claim
15 words
A process according to any preceding claim, wherein the layer is silicon, germanium or silicon-germanium.
Claim 6
Dependent Claim
47 words
A process according to claim 4, wherein the raw material gas is a silicon hydride of the formula si n H 2n+2 (n = 2, 3, 4) or a germanium hydride of the formula Ge m H 2m+2 (m = 1, 2, 3), or a mixture thereof.
Claim 7
Dependent Claim
35 words
A process according to claim 4 or claim 5, wherein the fluoride gas is silicon fluoride (if the layer comprises silicon), germanium fluoride (if the layer comprises germanium), boron fluoride, arsenic fluoride and phosphorus fluoride.
Claim 8
Dependent Claim
42 words
A process according to any preceding claim, comprising the further steps, prior to the deposition of the layer, of cleaning the substrate surface by allowing the fluoride gas to flow over the substrate, and applying ultraviolet light to decompose the fluoride gas.
Claim 9
Dependent Claim
16 words
A process according to claim 7, wherein the substrate is maintained at ambient temperature to 500°C.
Claim 10
Dependent Claim
20 words
A process according to any preceding claim, wherein the ultraviolet light has a wavelength of from 250 to 150 nm.
Claim 11
Dependent Claim
21 words
A process according to claim 9, wherein the ultraviolet light is irradiated from a laser or from a high-pressure mercury lamp.
Claim 12
Dependent Claim
119 words
Apparatus for epitaxially growing a semiconductor single crystal layer on a semiconductor single crystal substrate, comprising: a reactor having a susceptor for said substrate and a window allowing passage of ultraviolet light; an ultraviolet light source; a first inlet pipe for feeding a fluoride gas, which pipe is provided with a spray end portion thereof located above and close to the substrate; and a second inlet pipe for feeding a gas comprising the raw material for the layer, which branches into a first branch pipe having a first valve and joined to the first inlet pipe, and a second branch pipe having a second valve and leading into a region within the reactor not irradiatable with the ultraviolet light.
Claim 13
Dependent Claim
119 words
Apparatus for epitaxially growing a semiconductor single crystal layer on a semiconductor single crystal substrate, comprising: a reactor having a susceptor for said substrate and a window allowing passage of ultraviolet light; an ultraviolet light source; a first inlet pipe for feeding a fluoride gas, which pipe is provided with a spray end portion thereof located above and close to the substrate; and a second inlet pipe for feeding a gas comprising the raw material for the layer, which branches into a first branch pipe having a first valve and joined to the first inlet pipe, and a second branch pipe having a second valve and leading into a region within the reactor not irradiatable with the ultraviolet light.
References Cited (Backward Citations)
No citation records indexed.
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