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EP0368262A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Wiring substrate, film carrier, semiconductor device made by using the film carrier, and mounting structure comprising the semiconductor device
Assignee: Nitto Denko Corp
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Filing: 1989-11-07
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Granted: —
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Expires: 2009-11-07
Abstract
Abstract A wiring substrate, a film carrier, a semiconductor device made by using the film carrier, and a mounting structure comprising the semiconductor device (1) are disclosed. The wiring substrate comprises: a conductor pattern which has a bonding pad (3) and is formed on the rear surface of an insulating support (2); at least one of minute through-holes (4) which are provided in a region of the insulating support where the bonding pad is in contact therewith, or which are provided in a region of the insulating support where the bonding pad is in contact therewith and in the vicinity of the region, the through-holes running in the direction of the thickness of the insulating support; a conductive passage which is made of a metal material and which is formed in the through-holes that are provided in a region of the insulating support where the bonding pad is in contact therewith; and a bump-like metal protrusion (6) which is formed on the conductive passage and which is protruded from the front surface of the insulating support.
Inventors
- 👤 Masakazu C/O Nitto Denko Corporation Sugimoto
- 👤 Kazuo C/O Nitto Denko Corporation Ouchi
- 👤 Mikio C/O Nitto Denko Corporation Aizawa
- 👤 Atsushi C/O Nitto Denko Corporation Hino
- 👤 Kazuto C/O Nitto Denko Corporation Shinozaki
- 👤 Tetsuya C/O Nitto Denko Corporation Terada
- 👤 Takanori C/O Nitto Denko Corporation Miyoshi
- 👤 Munekazu C/O Nitto Denko Corporation Tanaka
- 👤 Shoji C/O Nitto Denko Corporation Morita
- 👤 Amane C/O Nitto Denko Corporation Mochizuki
- 👤 Yoshinari C/O Nitto Denko Corporation Takayama
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 12:07
CPC Classifications
H; H05; H05K; H05K1/00; H05K1/16; H05K1/02; H05K1/11; H05K1/111; H05K1/112; H05K1/113; H10; H10W; H10W70/00; H10W70/01; H10W70/05; H10W70/095; H10W70/60; H10W70/62; H10W70/63; H10W70/635; H05K1/03; H05K1/0393; H05K2201/00; H05K2201/01; H05K2201/0137; H05K2201/0154; H05K2201/03; H05K2201/0332; H05K2201/0388; H05K2201/0394; H05K2201/09; H05K2201/09209; H05K2201/095; H05K2201/09563; H05K2201/09654; H05K2201/0979; H05K3/00; H05K3/36; H05K3/361; H05K3/363; H05K3/40; H05K3/42; H05K3/423; H10W72/00; H10W72/071; H10W72/072; H10W72/07251; H10W72/20
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
144 words
A wiring substrate comprising: a conductor pattern which has a bonding pad and is formed on the rear surface of an insulating support; at least one of minute through-holes which are provided in a region of said insulating support where said bonding pad is in contact therewith, or which are provided in a region of said insulating support where said bonding pad is in contact therewith and the vicinity of said region, said through-holes running in the direction of the thickness of said insulating support; a conductive passage which is made of a metal material and which is formed in said through-holes that are provided in a region of said insulating support where said bonding pad is in contact therewith; and a bump-like metal protrusion which is formed on said conductive passage and which is protruded from the front surface of said insulating support.
Claim 2
Dependent Claim
144 words
A wiring substrate comprising: a conductor pattern which has a bonding pad and is formed on the rear surface of an insulating support; at least one of minute through-holes which are provided in a region of said insulating support where said bonding pad is in contact therewith, or which are provided in a region of said insulating support where said bonding pad is in contact therewith and the vicinity of said region, said through-holes running in the direction of the thickness of said insulating support; a conductive passage which is made of a metal material and which is formed in said through-holes that are provided in a region of said insulating support where said bonding pad is in contact therewith; and a bump-like metal protrusion which is formed on said conductive passage and which is protruded from the front surface of said insulating support.
Claim 3
Dependent Claim
17 words
The wiring substrate according to claim 1, wherein said insulating support is made of a polyimide film.
Claim 4
Independent Claim
174 words
A method for manufacturing a wiring substrate comprising: (a) forming a conductor pattern having a bonding pad on at least one surface of an insulating support; (b) forming, in a region of said insulating support where said bonding pad is in contact therewith, or in a region of said insulating support where said bonding pad is in contact therewith and the vicinity of said region, at least one of minute through-holes being apart from each other with a distance smaller than the width of said bonding pad and running in the direction of the thickness of said insulating support; and (c) conducting electroplating using said conductor pattern as an electrode after masking the surface of said insulating support on which said conductor pattern is formed, thereby depositing and growing a metal material in said through-holes that are formed in a region of said insulating support where said bonding pad is in contact therewith, so that a conductive passage is formed in said through-holes, and subsequently forming a bump-like metal protrusion on said conductive passage.
Claim 5
Independent Claim
174 words
A method for manufacturing a wiring substrate comprising: (a) forming a conductor pattern having a bonding pad on at least one surface of an insulating support; (b) forming, in a region of said insulating support where said bonding pad is in contact therewith, or in a region of said insulating support where said bonding pad is in contact therewith and the vicinity of said region, at least one of minute through-holes being apart from each other with a distance smaller than the width of said bonding pad and running in the direction of the thickness of said insulating support; and (c) conducting electroplating using said conductor pattern as an electrode after masking the surface of said insulating support on which said conductor pattern is formed, thereby depositing and growing a metal material in said through-holes that are formed in a region of said insulating support where said bonding pad is in contact therewith, so that a conductive passage is formed in said through-holes, and subsequently forming a bump-like metal protrusion on said conductive passage.
Claim 6
Dependent Claim
16 words
The method according to claim 3, wherein said insulating support is made of a polyimide film.
Claim 7
Dependent Claim
60 words
The method according to claim 3, wherein in said step (c), after the thickness of said conductive passage formed in said through-holes becomes a predetermined value, said insulating support is immersed in a solder bath to charge the solder into said through-holes, thereby depositing said metal material on said conductive passage and forming said metal protrusion on said metal material.
Claim 8
Dependent Claim
140 words
A film carrier comprising: an insulating film having a lead on one surface thereof; at least one of minute through-holes which are provided in a region of said insulating film where said lead is in contact therewith, or which are provided in a region of said insulating film where said lead is in contact therewith and the vicinity of said region, said through-holes running in the direction of the thickness of said insulating film; a conductive passage which is made of a metal material which is formed in said through-holes that are provided in a region of said insulating film where said lead is in contact therewith; and a bump-like metal protrusion which is formed on said conductive passage and which is protruded from the opposite side of the surface of said insulating film on which said lead is formed.
Claim 9
Dependent Claim
140 words
A film carrier comprising: an insulating film having a lead on one surface thereof; at least one of minute through-holes which are provided in a region of said insulating film where said lead is in contact therewith, or which are provided in a region of said insulating film where said lead is in contact therewith and the vicinity of said region, said through-holes running in the direction of the thickness of said insulating film; a conductive passage which is made of a metal material which is formed in said through-holes that are provided in a region of said insulating film where said lead is in contact therewith; and a bump-like metal protrusion which is formed on said conductive passage and which is protruded from the opposite side of the surface of said insulating film on which said lead is formed.
Claim 10
Dependent Claim
18 words
The film carrier according to claim 6, wherein said conductive passage is formed by depositing a metal material.
Claim 11
Dependent Claim
15 words
The film carrier according to claim 7, wherein said metal material is deposited by plating.
Claim 12
Dependent Claim
23 words
The film carrier according to claim 6, wherein said conductive passage is formed into a multi-layered structure of a plurality of metal materials.
Claim 13
Dependent Claim
30 words
The film carrier according to claim 6, wherein a thermal adhesive resin layer is provided on the surface of said insulating film on which said bump-like metal protrusion is formed.
Claim 14
Dependent Claim
28 words
A semiconductor device comprising a semiconductor element having an outer connecting electrode being connected to said bump-like metal protrusion of said film carrier as defined in claim 6.
Claim 15
Dependent Claim
23 words
The semiconductor device according to claim 11, wherein a thermal adhesive resin layer is interposed between said semiconductor element and said film carrier.
Claim 16
Dependent Claim
31 words
The semiconductor device according to claim 12, wherein said thermal adhesive resin layer is previously provided on the surface of said semiconductor element on which said outer connecting electrode is formed.
Claim 17
Dependent Claim
30 words
The semiconductor device according to claim 12, wherein said thermal adhesive resin layer is previously provided on the surface of said film carrier on which said semiconductor element is mounted.
Claim 18
Dependent Claim
34 words
The semiconductor device according to claim 12, wherein a thermal adhesive resin is introduced into the minute through- holes in that said conductive passage is not formed, thereby forming said thermal adhesive resin layer.
Claim 19
Dependent Claim
143 words
A mounting structure of a semiconductor device comprising an outer substrate and the semiconductor device as defined in claim 11 obtained by connecting a semiconductor element to a film carrier comprising an insulating film having a lead on one surface thereof, said mounting structure comprising: at least one of minute through-holes which are provided in a bonding region of said insulating film where a land portion of said outer substrate is in contact therewith, or which are provided in a bonding region of said insulating film where a land portion of said outer substrate is in contact therewith and the vicinity of said bonding region; a metal material which is charged into said through-holes that are provided in said bonding region; and a bump-like metal protrusion formed on said metal material; said lead being connected to said land portion through said bump-like protrusion.
Claim 20
Dependent Claim
18 words
The mounting structure of a semiconductor device according to claim 16, wherein said metal material is a solder.
Claim 21
Dependent Claim
27 words
The mounting structure of a semiconductor device according to claim 16, wherein a thermal adhesive resin layer is interposed between said film carrier and said outer substrate.
Claim 22
Dependent Claim
44 words
The mounting structure of a semiconductor device according to claim 18, wherein a thermal adhesive resin is introduced between said film carrier and said outer substrate through said through-holes in that said metal material is not charged, thereby forming said thermal adhesive resin layer.
References Cited (Backward Citations)
No citation records indexed.
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