Patent EP0367536A2 successfully refreshed from Google Patents.
EP0367536A2
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Rod base material for providing wafers used for electronic devices and a method of manufacturing wafers used for electronic device
Assignee: Mitsubishi Electric Corp
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Filing: 1989-10-30
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Granted: —
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Expires: 2009-10-30
Abstract
Abstract The rod base material for wafers comprises a plurality of rod members made of materials to be used as the wafers used for electronic devices which are assembled in parallel and bonded with each other into an integrated body. Wafers used for electronic devices can be obtained by slicing the rod base material for the wafers. Mirror-finished bonded face is formed to the outer surface for each of the rod members. The bonded face to each of the rod members is cleaned by a surface treatment using chemicals. Subsequently, respective rod members are assembled in parallel and brought into contact with each other at their respective bonded faces. The thus prepared rod base material are maintained in a heated atmosphere into an integrated body. Then, the rod base material is applied with slicing for providing wafers used for electronic devices. Since the rod base material has a structure in which a plurality of the rod members are assembled in parallel and bonded with each other into an integrated body, the diameter for the rod base material can remarkably be increased. Accordingly, the diameter of the wafers obtained by slicing the rod base material is also increased remarkably. Since the wafer diameter is increased remarkably, the cost per one electronic device formed on the wafer is also reduced remarkably.
Inventors
- 👤 Noboru C/O Mitsubishi Denki K.K. Terao
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 14:13
CPC Classifications
H; H10; H10P; H10P90/00; H10P52/00; C; C30; C30B; C30B29/00; C30B29/02; C30B29/06; C30B33/00; H10P10/00; H10P10/12; H10P10/128; Y; Y10; Y10S; Y10S148/00; Y10S148/012; Y10S148/017; Y10T; Y10T156/00; Y10T156/10; Y10T156/1052
Claims Analysis
Total Claims: 43
Claim 1
Independent Claim
47 words
A rod base material for providing a plurality of wafers used for electronic devices by being sliced, wherein a plurality of rod members prepared from material to be used as wafers for electronic devices are assembled in parallel and bonded with each other into an integrated body.
Claim 2
Dependent Claim
47 words
A rod base material for providing a plurality of wafers used for electronic devices by being sliced, wherein a plurality of rod members prepared from material to be used as wafers for electronic devices are assembled in parallel and bonded with each other into an integrated body.
Claim 3
Dependent Claim
47 words
A rod base material for wafers as defined in claim 1, wherein each of the rod members has a bonded face extended in the longitudinal direction thereof and finished to a mirror-face state, and the respective rod members are bonded with each other at the bonded face.
Claim 4
Dependent Claim
22 words
A rod base material for wafers as defined in claim 2, wherein each of the rod members is made of same material.
Claim 5
Dependent Claim
48 words
A rod base material for wafers as defined in claim 3, wherein each of the rod members is made of Si single crystals or Si polycrystals, and the bonded faces for the respective rod members are bonded with each other by means of Si-O-Si bond or Si-Si bond.
Claim 6
Dependent Claim
48 words
A rod base material for wafers as defined in claim 3, wherein each of the rod members is made of Ge single crystals or Ge polycrystals, and the bonded faces for the respective rod members are bonded with each other by means of Ge-O-Ge bond or Ge-Ge bond.
Claim 7
Dependent Claim
42 words
A rod base material for wafers as defined in claim 3, wherein each of the rod members is made of Si single crystals or Si polycrystals, and the bonded faces of the respective rod members are bonded with each other through SiO₂.
Claim 8
Dependent Claim
27 words
A rod base material for wafers as defined in claim 3, wherein each of the rod members is made of GaAs, InP, CdS, sapphire, quartz or alumina.
Claim 9
Dependent Claim
19 words
A rod base material for wafers as defined in claim 2, wherein rod member has a square prism shape.
Claim 10
Dependent Claim
26 words
A rod base material for wafers as defined in claim 2, wherein each of the rod members comprises a single crystal ingot or a polycrystal ingot.
Claim 11
Dependent Claim
32 words
A rod base material for wafers as defined in claim 2, wherein the rod base material has a marking indicating the position for the bonded portion between each of the rod members.
Claim 12
Dependent Claim
27 words
A rod base material for wafers as defined in claim 10, wherein the marking is a recess formed on the outer surface of the rod base material.
Claim 13
Dependent Claim
27 words
A rod base material for wafers as defined in claim 10, wherein the working is a cavity formed at the central portion of the rod base material.
Claim 14
Dependent Claim
49 words
A rod base material for providing a plurality of wafers used for electronic devices by being sliced, wherein a plurality of rod members prepared from different materials respectively to be used as wafers for electronic devices are assembled in parallel and bonded with each other into an integrated body.
Claim 15
Dependent Claim
49 words
A rod base material for providing a plurality of wafers used for electronic devices by being sliced, wherein a plurality of rod members prepared from different materials respectively to be used as wafers for electronic devices are assembled in parallel and bonded with each other into an integrated body.
Claim 16
Dependent Claim
33 words
A rod base material for wafers as defined in claim 13, wherein the first rod member is made of Si single crystals and the second rod member is made of GaAs single crystal.
Claim 17
Dependent Claim
34 words
A wafer used for electronic devices obtained by applying slicing to a rod base material which comprises a plurality of rod members arranged in parallel and bonded with each other into an integrated body.
Claim 18
Dependent Claim
34 words
A wafer used for electronic devices obtained by applying slicing to a rod base material which comprises a plurality of rod members arranged in parallel and bonded with each other into an integrated body.
Claim 19
Dependent Claim
48 words
A wafer used for electronic devices as defined in claim 15, wherein each of the rod members is made of Si single crystals or Si polycrystals, and the bonded faces for the respective rod members are bonded with each other by means of Si-O-Si bond or Si-Si bond.
Claim 20
Dependent Claim
48 words
A wafer used for electronic devices as defined in claim 15, wherein each of the rod members is made of Ge single crystals or Ge polycrystals, and the bonded faces for the respective rod members are bonded with each other by means of Ge-O-Ge bond or Ge-Ge bond.
Claim 21
Dependent Claim
42 words
A wafer used for electronic device as defied in claim 15, wherein each of the rod members is made of Si single crystals or Si polycrystals, and the bonded faces of the respective rod members are bonded with each other through SiO₂.
Claim 22
Dependent Claim
22 words
A wafer used for electronic devices as defined in claim 15, wherein each of the rod members is made of different materials.
Claim 23
Dependent Claim
32 words
A wafer used for electronic devices as defined in claim 15, wherein the rod base material has a marking indicating the position for the bonded portion between each of the rod members.
Claim 24
Dependent Claim
27 words
A wafer used for electronic devices as defined in claim 20, wherein the marking is a recess formed on the outer surface of the rod base material.
Claim 25
Dependent Claim
27 words
A wafer used for electronic devices as defined in claim 20, wherein the marking is a cavity formed at the central portion of the rod base material.
Claim 26
Dependent Claim
129 words
A process for producing wafers used for electronic devices comprising the steps of: preparing a plurality of rod members made of material to be used as the wafer for electronic devices, forming, to the outer surface of each of said rod members, a bonded face extended in the longitudinal direction thereof and finished to a mirror-face state, cleaning the bonded face for each of the rod members by a surface treatment using chemicals, assembling each of said rod members in parallel and bringing the respective bonded faces to each other, thereby preparing a rod base material as an assembly of each of said rod members, maintaining said rod base material in a heated atmosphere, and obtaining wafers used for electronic devices by applying slicing to said rod base material.
Claim 27
Dependent Claim
129 words
A process for producing wafers used for electronic devices comprising the steps of: preparing a plurality of rod members made of material to be used as the wafer for electronic devices, forming, to the outer surface of each of said rod members, a bonded face extended in the longitudinal direction thereof and finished to a mirror-face state, cleaning the bonded face for each of the rod members by a surface treatment using chemicals, assembling each of said rod members in parallel and bringing the respective bonded faces to each other, thereby preparing a rod base material as an assembly of each of said rod members, maintaining said rod base material in a heated atmosphere, and obtaining wafers used for electronic devices by applying slicing to said rod base material.
Claim 28
Dependent Claim
50 words
A process for producing wafers for electronic devices as defined in claim 23, wherein the step of cleaning the bonded face using the chemicals comprises degreasing the bonded face, oxidizing to remove deposits deposited to the bonded face, and rendering the bonded face into a stable and uniform oxidized state.
Claim 29
Dependent Claim
31 words
A process for producing wafers for electronic devices as defined in claim 24, wherein the degreasing for the bonded face is conducted by cleaning said bonded face with an organic solvent.
Claim 30
Dependent Claim
31 words
A process for producing wafers for electronic devices as defined in claim 24, wherein the oxidative removal of the deposits is conducted by immersing the bonded face into heated sulfuric acid.
Claim 31
Dependent Claim
41 words
A process for producing wafers for electronic devices as defined in claim 24, wherein the rendering of the bonded face to the stable and uniformly oxidized state is conducted by immersing the bonded face into a heated nitric acid type solution.
Claim 32
Dependent Claim
43 words
A process for producing wafers for electronic device as defined in claim 24, wherein the rendering of the bonded face to the stable and uniformly oxidized state conducted by removing the outermost surface of the oxide film layer formed on the bonded face.
Claim 33
Dependent Claim
38 words
A process for producing wafers for electronic devices as defined in claim 28, wherein the removal of the outermost surface of the oxide film layer is conducted by immersing the bonded face in an aqueous fluoric acid solution.
Claim 34
Dependent Claim
39 words
A process for producing wafer for electronic devices as defined in claim 23, wherein the bonded face finished to the mirror-face state has a flatness of less than 10 µm and the surface roughness of less than 10 nm.
Claim 35
Dependent Claim
37 words
A process for producing wafer for electronic devices as defined in claim 23, wherein the step of assembling each of the rod members in parallel thereby preparing the rod base material is conducted under a room temperature.
Claim 36
Dependent Claim
35 words
A process for producing wafers for electronic devices as defined in claim 23, wherein a step of maintaining the rod base material in heated atmosphere comprises placing the rod base material in a nitrogen atmosphere.
Claim 37
Dependent Claim
87 words
A process for producing wafers for electronic devices as defined in claim 23, wherein the step of maintaining the rod base material in the heated atmosphere comprises, placing the rod base material in an atmosphere at an elevated temperature of about 400 o C and, thereafter, placing said rod base material in an atmosphere at an elevated temperature of about 600 o C and, thereafter, and placing said rod base material in an atmosphere at an elevated temperature within the range of 900 to 1100 o C.
Claim 38
Dependent Claim
70 words
A process for producing wafers for electronic device as defined in claim 33, wherein the time for placing the rod base material in an atmosphere at an elevated temperature within the range of 400 to 600 o C is more than 30 min and, the time for placing the rod base material in an atmosphere at an elevated temperature of 900 to 1100 o C is more than 30 min.
Claim 39
Dependent Claim
24 words
A process for producing wafers for electronic devices as defined in claim 23, wherein each of the rod members is made of identical material.
Claim 40
Dependent Claim
29 words
A process for producing wafers used for electronic devices as defined in claim 35, wherein each of the rod members is made of Si single crystals or Si polycrystals.
Claim 41
Dependent Claim
29 words
A process for producing wafers used for electronic devices as defined in claim 35, wherein each of the rod memberss is made of Ge single crystals or Ge polycrystals.
Claim 42
Dependent Claim
25 words
A process for producing wafers used for electronic devices as defined in claim 23, wherein each of the rod members is made of different material.
Claim 43
Dependent Claim
43 words
A process for producing wafers used for electronic devices as defined in claim 38, wherein the first rod member is made of Si single crystals and the second rod member is made of GaAs single crystals among the plurality of the rod members.
References Cited (Backward Citations)
No citation records indexed.
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