Patent EP0366367A2 successfully refreshed from Google Patents.
EP0366367A2
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Charged particle beam exposure method
Assignee: Fujitsu Ltd
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Filing: 1989-10-20
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Granted: —
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Expires: 2009-10-20
Abstract
Abstract A charged particle beam exposure method for selectively exposing a resist layer by use of a charged particle beam to form a desired pattern, comprising the steps of repeatedly exposing a basic pattern (1) by use of a charged particle beam so as to expose a pattern within a first predetermined region (2) by a main exposure (3), where the pattern within the first predetermined region is a repetition of the basic pattern, and exposing a second predetermined region (2b, 5) by an auxiliary exposure (6) with an intensity lower than that of the main exposure. The second predetermined region excludes a central portion (2a) of the first predetermined region and includes a region in which proximity occurs due to the main exposure.
Inventors
- 👤 Yasushi Takahashi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-07 22:39
CPC Classifications
B; B82; B82Y; B82Y10/00; B82Y40/00; G; G03; G03F; G03F7/00; G03F7/20; G03F7/2022; H; H01; H01J; H01J37/00; H01J37/30; H01J37/317; H01J37/3174; H01J2237/00; H01J2237/30; H01J2237/317; H01J2237/3175; H01J2237/31769; H01J2237/31771; Y; Y10; Y10S; Y10S430/00; Y10S430/167; Y10S430/168
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
131 words
A charged particle beam exposure method for selectively exposing a resist layer by use of a charged particle beam to form a desired pattern, characterized in that said charged particle beam exposure method comprising the steps of: repeatedly exposing a basic pattern (1) by use of a charged particle beam so as to expose a pattern within a first predetermined region (2) by a main exposure (3), said pattern within said first predetermined region being a repetition of the basic pattern; and exposing a second predetermined region (2b, 5) by an auxiliary exposure (6) with an intensity lower than that of said main exposure, said second predetermined region excluding a central portion (2a) of said first predetermined region and including a region in which proximity occurs due to said main exposure.
Claim 2
Dependent Claim
131 words
A charged particle beam exposure method for selectively exposing a resist layer by use of a charged particle beam to form a desired pattern, characterized in that said charged particle beam exposure method comprising the steps of: repeatedly exposing a basic pattern (1) by use of a charged particle beam so as to expose a pattern within a first predetermined region (2) by a main exposure (3), said pattern within said first predetermined region being a repetition of the basic pattern; and exposing a second predetermined region (2b, 5) by an auxiliary exposure (6) with an intensity lower than that of said main exposure, said second predetermined region excluding a central portion (2a) of said first predetermined region and including a region in which proximity occurs due to said main exposure.
Claim 3
Dependent Claim
44 words
The charged particle beam exposure method as claimed in claim 1, characterized in that said step of making the auxiliary exposure (6) exposes said second predetermined region (2b, 5) by transmitting an electromagnetic wave beam through a photo or optical mask (26, 200, 73).
Claim 4
Dependent Claim
25 words
The charged particle beam exposure method as claimed in claim 1 or 2, characterized in that said first predetermined region (2) has a rectangular shape.
Claim 5
Dependent Claim
67 words
The charged particle beam exposure method as claimed in claim 3, characterized in that said second predetermined region (2b, 5) comprises a first portion which is located on a first side of said first predetermined region (2) and a second portion which is located on a second side of said first predetermined region, said first and second sides being mutually confronting sides of said first predetermined region.
Claim 6
Dependent Claim
43 words
The charged particle beam exposure method as claimed in claim 3, characterized in that said second predetermined region (2b, 5) has a hollow rectangular shape (60) with an inner peripheral portion partially overlapping an outer peripheral portion of said first predetermined region (2).
Claim 7
Dependent Claim
47 words
The charged particle beam exposure method as claimed in claim 5, characterized in that a width of said second predetermined region (60) between an outer peripheral edge and an inner peripheral edge is selected to a value dependent on the pattern within said first predetermined region (2).
Claim 8
Dependent Claim
40 words
The charged particle beam exposure method as claimed in claim 5, characterized in that an outer peripheral edge of said second predetermined region (60) coincides with an outer peripheral edge of a chip which is constituted by the semiconductor device.
Claim 9
Dependent Claim
44 words
The charged particle beam exposure method as claimed in any of claims 1 to 7, characterized in that an inner peripheral edge of said second predetermined region (2b, 5) coincides with an outer peripheral edge of the pattern within said first predetermined region (2).
Claim 10
Dependent Claim
29 words
The charged particle beam exposure method as claimed in claim 8, characterized in that said second predetermined region (2b, 5) excludes the pattern within said first predetermined region (2).
Claim 11
Dependent Claim
30 words
The charged particle beam exposure method as claimed in claim 8, characterized in that said second predetermined region (2b, 5) partially overlaps the pattern within said first predetermined region (2).
Claim 12
Dependent Claim
45 words
The charged particle beam exposure method as claimed in any of claims 1 to 7, characterized in that an inner peripheral edge of said second predetermined region (2b, 5) approximately coincides with an outer peripheral edge of the pattern within said first predetermined region (2).
Claim 13
Dependent Claim
29 words
The charged particle beam exposure method as claimed in claim 11, characterized in that said second predetermined region (2b, 5) excludes the pattern within said first predetermined region (2).
Claim 14
Dependent Claim
30 words
The charged particle beam exposure method as claimed in claim 11, characterized in that said second predetermined region (2b, 5) partially overlaps the pattern within said first predetermined region (2).
Claim 15
Dependent Claim
47 words
The charged particle beam exposure method as claimed in any of claims 1 to 7, characterized in that an inner peripheral edge of said second predetermined region (2b, 5) forms a predetermined gap between an outer peripheral edge of the pattern within said first predetermined region (2).
Claim 16
Dependent Claim
29 words
The charged particle beam exposure method as claimed in claim 14, characterized in that said second predetermined region (2b, 5) excludes the pattern within said first predetermined region (2).
Claim 17
Dependent Claim
30 words
The charged particle beam exposure method as claimed in claim 14, characterized in that said second predetermined region (2b, 5) partially overlaps the pattern within said first predetermined region (2).
Claim 18
Dependent Claim
50 words
The charged particle beam exposure method as claimed in any of claims 1 to 16, characterized in that said step of making the auxiliary exposure (6) selects the intensity of the auxiliary exposure to decrease from an outer periphery towards an inner periphery of said second predetermined region (2b, 5).
Claim 19
Dependent Claim
51 words
The charged particle beam exposure method as claimed in any of claims 1 to 17, characterized in that said step of repeatedly exposing the basic pattern exposes the basic pattern (1) on a substrate (35) which has the resist layer formed thereon, said substrate being used for producing a semiconductor device.
Claim 20
Dependent Claim
50 words
The charged particle beam exposure method as claimed in any of claims 1 to 17, characterized in that said step of repeatedly exposing the basic pattern exposes the basic pattern (1) on a substrate (135) which has the resist layer formed thereon, said substrate being used for producing a reticle.
Claim 21
Dependent Claim
50 words
The charged particle beam exposure method as claimed in any of claims 1 to 17, characterized in that said step of repeatedly exposing the basic pattern exposes the basic pattern (1) on a substrate (235) which has the resist layer formed thereon, said substrate being used for producing a mask.
References Cited (Backward Citations)
No citation records indexed.
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