Patent EP0366027A2 successfully refreshed from Google Patents.
EP0366027A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Wafer flood polishing
Assignee: International Business Machines Corp
•
Filing: 1989-10-21
•
Granted: —
•
Expires: 2009-10-21
Abstract
Abstract In a chem-mech polishing process for planarizing insulators such as silicon oxide and silicon nitride, a pool of slurry is utilized at a temperature between 29.4-35.0°C (85°F-95°F). The slurry particulates (e.g. silica) have a hardness commensurate to the hardness of the insulator to be polished. Under these conditions, wafers can be polished at a high degree of uniformity more economically (by increasing pad lifetime), without introducing areas of locally incomplete polishing.
Inventors
- 👤 William J. Cote
- 👤 Michael A. Leach
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 06:18
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/06; H10P95/062; B; B24; B24B; B24B37/00; B24B37/005; B24B37/013; B24B37/015; B24B37/04; B24B37/042; B24B49/00; B24B49/16
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
101 words
In a process of chem-mech polishing an insulator layer arranged on a semiconductor wafer, wherein the wafer is brought into contact with a rotating polish wheel having a polishing pad disposed thereon, the improvement comprising: providing sufficient slurry to form a pool defined by a dam disposed about the outer periphery of the polish wheel, wherein said polishing pad is immersed in said pool during polishing, and wherein said slurry comprises a liquid suspension of solid particulates having a hardness commensurate to the hardness of the insulator layer; and elevating the temperature of said slurry to at least approximately 29.4°C (85°F).
Claim 2
Dependent Claim
101 words
In a process of chem-mech polishing an insulator layer arranged on a semiconductor wafer, wherein the wafer is brought into contact with a rotating polish wheel having a polishing pad disposed thereon, the improvement comprising: providing sufficient slurry to form a pool defined by a dam disposed about the outer periphery of the polish wheel, wherein said polishing pad is immersed in said pool during polishing, and wherein said slurry comprises a liquid suspension of solid particulates having a hardness commensurate to the hardness of the insulator layer; and elevating the temperature of said slurry to at least approximately 29.4°C (85°F).
Claim 3
Dependent Claim
17 words
Process as recited in claim 1, wherein said slurry is at a temperature between approximately 29.4-35.0°C (85°F-95°F).
Claim 4
Dependent Claim
19 words
Process as recited in claim 1, wherein said solid particulates have an average size of at least 0.02 microns.
Claim 5
Dependent Claim
18 words
Process is recited in claim 1, wherein said solid particulates constitute approximately 10%-15% by weight of said slurry.
Claim 6
Dependent Claim
13 words
Process as recited in claim 4, wherein said particulates are comprised of SiO₂.
Claim 7
Dependent Claim
20 words
Process as recited in claim 1, wherein said polish wheel rotates at a speed no greater than approximately 30 RPM.
Claim 8
Dependent Claim
19 words
Process as recited in claim 6, wherein said polish wheel rotates at a speed between approximately 15 RPM-20 RPM.
Claim 9
Dependent Claim
25 words
Process as recited in claim 6, wherein a plurality of semiconductor wafers are simultaneously polished by being brought into contact with the same polish wheel.
Claim 10
Dependent Claim
42 words
Process as recited in claim 8, wherein at least one of said wafers is a dummy wafer comprising a silicon substrate with a discrete layer thereon having a thickness commensurate to the amount of material to be removed from the remaining wafers.
Claim 11
Dependent Claim
123 words
In a process of chem-mech polishing a layer of silicon oxide disposed on a semiconductor substrate, wherein the substrate is supported by a quill in contact with a rotating polish wheel having a polishing pad disposed thereon, the improvement comprising: providing an amount of slurry sufficient to form a pool defined by a dam disposed about the polish wheel, wherein said polishing pad is immersed in said pool during polishing, and wherein said slurry comprises a suspension of 10%-15% silica particulates by weight, said particulates having an average diameter of at least approximately 0.02 microns; and elevating the temperature of said slurry to at least approximately 29.4°C (85°F); and wherein said polish wheel rotates at a speed no greater than approximately 30 RPM.
Claim 12
Dependent Claim
123 words
In a process of chem-mech polishing a layer of silicon oxide disposed on a semiconductor substrate, wherein the substrate is supported by a quill in contact with a rotating polish wheel having a polishing pad disposed thereon, the improvement comprising: providing an amount of slurry sufficient to form a pool defined by a dam disposed about the polish wheel, wherein said polishing pad is immersed in said pool during polishing, and wherein said slurry comprises a suspension of 10%-15% silica particulates by weight, said particulates having an average diameter of at least approximately 0.02 microns; and elevating the temperature of said slurry to at least approximately 29.4°C (85°F); and wherein said polish wheel rotates at a speed no greater than approximately 30 RPM.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.