Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
51 words
A composition comprising: A) an organosilicon compound having as the terminal groups, quinone diazo groups, and B) phenolic-novolak polymer wherein the relative amount of A is about 5% to about 50% and the amount of B is about 95% to about 50% based upon the total weight of A and B.
Claim 2
Dependent Claim
51 words
A composition comprising: A) an organosilicon compound having as the terminal groups, quinone diazo groups, and B) phenolic-novolak polymer wherein the relative amount of A is about 5% to about 50% and the amount of B is about 95% to about 50% based upon the total weight of A and B.
Claim 3
Dependent Claim
29 words
Composition according to claim 1, wherein the relative amount of A is about 10% to about 30% and the relative amount of B is about 90% to about 70%.
Claim 4
Dependent Claim
23 words
Composition according to claim 1 or 2, wherein said quinone diazo groups are quinone -(1,2)-diazo groups of the benzene, naphthalene and phenanthrene series.
Claim 5
Dependent Claim
50 words
Composition according to any one of claims 1 to 3, wherein said quinone diazo groups are selected from the group of: wherein k represents an integer from 1 to 3; 1 represents an integer from 0 to 2; each R² individually is hydrogen or a monovalent hydrocarbon radical,and is preferably
Claim 6
Dependent Claim
94 words
Composition according to any one of claims 1 to 4, wherein said organosilicon is selected from the group of compounds represented by the formulae: wherein each φ individually represents a quino diazo group; m is an integer from 1 to 12 and n is an integer from 1 to 10³; x is 1 to 10²; each b is an integer from 1 to 4 and each a is an integer of 4-b; and each R and R¹ individually is hydrogen, monovalent hydrocarbon radicals; halogenated monovalent hydrocarbon radicals, epoxy groups, mercoptic groups and cyanoaldehyde radicals.
Claim 7
Dependent Claim
18 words
Composition of claim 1, wherein said organosilicon is selected from the group of compounds represented by the formulae:
Claim 8
Dependent Claim
22 words
Composition according to any one of claims 1 to 6, wherein said novolak polymer includes a diazoketone photosensitizer, preferably 2-diazo-1-naphtol-5-sulphonic acid ester.
Claim 9
Dependent Claim
106 words
Process for producing an image which comprises providing on a substrate a layer of an ultraviolet light sensitive positive resist composition containing: A) an organosilicon compound having as the terminal groups, quinone diazo groups, and B) phenolic-novolak polymer wherein the relative amount of A is about 5% to about 50% and the amount of B is about 95% to about 50% based upon the total weight of A) and B); imagewise exposing the layer of light-sensitive composition to imaging radiation in a desired pattern and developing the exposed layer, thereby leaving the desired pattern of the layer of light-sensitive positive resist composition remaining on the substrate.
Claim 10
Dependent Claim
106 words
Process for producing an image which comprises providing on a substrate a layer of an ultraviolet light sensitive positive resist composition containing: A) an organosilicon compound having as the terminal groups, quinone diazo groups, and B) phenolic-novolak polymer wherein the relative amount of A is about 5% to about 50% and the amount of B is about 95% to about 50% based upon the total weight of A) and B); imagewise exposing the layer of light-sensitive composition to imaging radiation in a desired pattern and developing the exposed layer, thereby leaving the desired pattern of the layer of light-sensitive positive resist composition remaining on the substrate.
Claim 11
Dependent Claim
66 words
Process for producing an image which comprises providing on a substrate a layer of an ultraviolet light sensitive positive resist composition according to any one of claims 2 to 7 imagewise exposing the layer of light-sensitive composition to imaging radiation in a desired pattern and developing the exposed layer, thereby leaving the desired pattern of the layer of light-sensitive positive resist composition remaining on the substrate.
Claim 12
Dependent Claim
33 words
Process according to claim 8 or 9, which further comprises etching the substrate by a dry etching process using the pattern of the layer of said light-sensitive positive resist composition as the mask.