Abstract Method of depositing an oxide superconductor on a substrate by epitaxially growing a 0.05-2.0 micron thick, single crystal buffer layer of magnesia or cubic zirconia on a single crystal sapphire substrate; and then growing an oriented oxide superconductor layer on the buffer layer. The sapphire substrate with a thin buffer layer provides for low dielectric losses (negligibly larger than sapphire by itself), the oxide superconductor can be oriented in a desired direction to provide higher current carrying capacity, and reaction between the sapphire substrate and the oxide superconductor (especially that due to diffusion of aluminum) is minimized. Preferably, the buffer layer is 0.1-1.0 micron thick, magnesia in a (111), or (100), or (110) orientation.
A method of depositing an oxide superconductor on a substrate, characterized by epitaxially growing a 0.05-2.0 micron thick, single crystal buffer layer of magnesia or zirconia on a single crystal sapphire substrate; and growing an oriented oxide superconductor layer on said buffer layer.
Claim 2
Independent Claim
43 words
A method of depositing an oxide superconductor on a substrate, characterized by epitaxially growing a 0.05-2.0 micron thick, single crystal buffer layer of magnesia or zirconia on a single crystal sapphire substrate; and growing an oriented oxide superconductor layer on said buffer layer.
Claim 3
Dependent Claim
16 words
A method according to claim 1, characterized in that the buffer layer is 0.1-1.0 micron thick.
Claim 4
Dependent Claim
19 words
A method according to claim 1 or 2, characterized in that the buffer layer is of single crystal magnesia.
Claim 5
Dependent Claim
20 words
A method according to claim 3, characterized in that the magnesia is in a (111) or (100) or (110) orientation.
Claim 6
Dependent Claim
27 words
A method according to claim 1, 2, 3 or 4, characterized in that the oxide superconductor is oriented with its c-axis normal the surface of the substrate.
Claim 7
Independent Claim
20 words
A method according to any of claims 1 to 5, characterized in that the sapphire substrate is 0.1-1.0 mm thick.
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