Patent EP0360403A2 successfully refreshed from Google Patents.
EP0360403A2
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Thin film solar cell and method of making
Assignee: Siemens Solar Industries LP
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Filing: 1989-08-09
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Granted: —
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Expires: 2009-08-09
Abstract
Abstract A structure for, and method of making, thin films of Group I-III-VI compound semiconductors such as copper indium diselenide for use in heterojunction photovoltaic devices fabricated on metal substrates (12). An interfacial film (13) containing gallium is first deposited upon the substrate (12). Thereafter, copper (24) and indium (26) films are deposited and the resulting stacked film is heated in the presence of a source of selenium to form copper indium diselenide semiconductor material with improved adhesion to the substrate and improved performance.
Inventors
- 👤 Gary A. Pollock
- 👤 Kim W. Mitchell
- 👤 James H. Ermer
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 18:56
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/16; H10F10/167; C; C23; C23C; C23C14/00; C23C14/06; C23C14/0623; H10F77/00; H10F77/10; H10F77/12; H10F77/126; H10F77/20; H10F77/206; H10F77/211; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/541
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
58 words
A photovoltaic device having a metal back contact, a Group I-III-VI semiconductor film of a first conductivity type on said back contact and a semiconductor film of conductivity type opposite said first type on said Group I-III-VI film, characterised by the provision of an interfacial film containing gallium between said metal back contact and said Group I-III-VI film.
Claim 2
Dependent Claim
58 words
A photovoltaic device having a metal back contact, a Group I-III-VI semiconductor film of a first conductivity type on said back contact and a semiconductor film of conductivity type opposite said first type on said Group I-III-VI film, characterised by the provision of an interfacial film containing gallium between said metal back contact and said Group I-III-VI film.
Claim 3
Dependent Claim
25 words
A device according to Claim 1, wherein said interfacial film comprises gallium and at least one of the elements which comprise said Group I-III-VI film.
Claim 4
Independent Claim
22 words
A device according to any one of the preceding claims, wherein said Group I-III-VI film comprises a copper indium diselenide semiconductor film.
Claim 5
Independent Claim
17 words
A device according to any one of the preceding claims, wherein said interfacial film comprises gallium selenide.
Claim 6
Independent Claim
16 words
A device according to any one of the preceding claims, wherein said back contact comprises molybdenum.
Claim 7
Independent Claim
27 words
A device according to any one of the preceding claims, wherein said interfacial film contains gallium equivalent to at least about fifty angstroms of pure elemental gallium.
Claim 8
Independent Claim
23 words
A device acording to any one of the preceding claims wherein said back contact comprises a film of molybdenum on a glass substrate.
Claim 9
Independent Claim
25 words
A device according to any one of the preceding claims, wherein said interfacial film comprises copper, indium, selenium and at least one atomic percent gallium.
Claim 10
Independent Claim
80 words
A method for making a photovoltaic device comprising: depositing an interfacial film containing gallium on a metal back contact, depositing a film of copper on said interfacial film, depositing a film of indium on said film or copper, heating said back contact and interfacial, copper and indium films in the presence of a source of selenium at a temperature and for a time selected to cause interdiffusion of copper, indium and selenium to form a film comprising copper indium diselenide.
Claim 11
Independent Claim
80 words
A method for making a photovoltaic device comprising: depositing an interfacial film containing gallium on a metal back contact, depositing a film of copper on said interfacial film, depositing a film of indium on said film or copper, heating said back contact and interfacial, copper and indium films in the presence of a source of selenium at a temperature and for a time selected to cause interdiffusion of copper, indium and selenium to form a film comprising copper indium diselenide.
Claim 12
Dependent Claim
20 words
A method according to Claim 9, wherein said interfacial film comprises copper and at least about one atomic percent gallium.
Claim 13
Dependent Claim
13 words
A method according to Claim 9, wherein said interfacial film comprises gallium selenide.
Claim 14
Independent Claim
36 words
A method according to any one of Claims 9 to 11, wherein said interfacial film is deposited to a thickness selected to provide a quantity of gallium equivalent to about fifty angstroms of pure elemental gallium.
Claim 15
Independent Claim
78 words
A method for making a photovoltaic device comprising: depositing a first film comprising copper and at least one atomic percent gallium on a metal back contact, depositing a second film comprising indium on said first film, and heating said substrate with said first and second films in the presence of a source of selenium for a time and at a temperature selected to cause interdiffusion of copper, indium and selenium to form a film comprising copper indium diselenide.
Claim 16
Independent Claim
78 words
A method for making a photovoltaic device comprising: depositing a first film comprising copper and at least one atomic percent gallium on a metal back contact, depositing a second film comprising indium on said first film, and heating said substrate with said first and second films in the presence of a source of selenium for a time and at a temperature selected to cause interdiffusion of copper, indium and selenium to form a film comprising copper indium diselenide.
Claim 17
Dependent Claim
33 words
A method according to Claim 13, wherein said first film is deposited to a thickness selected to provide a quantity of gallium equivalent to at least about fifty angstroms of pure elemental gallium.
References Cited (Backward Citations)
No citation records indexed.
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