Patent US2996979A successfully refreshed from Google Patents.
Patent EP0359264B1 successfully refreshed from Google Patents.
EP0359264B1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Hydrogenated amorphous materials and thin films thereof
Assignee: Fujitsu Ltd
•
Filing: 1989-09-14
•
Granted: 1994-05-04
•
Expires: 2009-09-14
Abstract
No abstract record available.
Inventors
- 👤 Jun C/O Fujitsu Limited Pat. Dep. Kodama
- 👤 Shin C/O Fujitsu Limited Pat. Dep. Araki
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-04 15:36
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/10; H10W74/131; H10W74/137; C; C23; C23C; C23C16/00; C23C16/44; C23C16/50; C23C16/517; C23C16/22; C23C16/30; C23C16/32; C23C16/325; C23C16/448; C23C16/452; H10F; H10F71/00; H10F71/10; H10F71/103; H10F71/1035; H10W95/00; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
125 words
Use of thin film formation apparatus for forming a dense, thin protective film of hydrogenated amorphous material on a substrate, said material containing an ingredient to reduce surface wettability, said apparatus comprising a reactor vessel, a first introducing means, a plasma generating means, a second introducing means, and a hydrogen radical generating means, in which use the substrate is placed in the reactor vessel, the first introducing means introduce starting gas into said reactor vessel, the plasma generating means generate plasma in said reactor vessel, the second introducing means deliver hydrogen gas, and the hydrogen radical generating means generate hydrogen radicals by decomposing hydrogen gas supplied by said second introducing means, and the generated hydrogen radicals are sent to said substrate in the reactor vessel.
Claim 2
Dependent Claim
24 words
Use as claimed in claim 1, said apparatus further comprising a hydrogen radical introducing unit which uniformly sends said hydrogen radicals to said substrate.
Claim 3
Dependent Claim
24 words
Use as claimed in claim 1 or 2, said first introducing means including a gas source containing disilane and a gas source containing propane.
Claim 4
Dependent Claim
20 words
Use as claimed in claim 1, 2 or 3, said second introducing means including a gas source containing hydrogen gas.
Claim 5
Dependent Claim
30 words
Use as claimed in claim 1, 2, 3 or 4, said plasma generating means including a first electrode receiving a supply of radio frequency power, and a grounded second electrode.
Claim 6
Dependent Claim
45 words
Use as claimed in any preceding claim, said hydrogen radical generating means including a microwave oscillator, a waveguide guiding microwaves, a quartz pipe to which said hydrogen gas is applied, and a plasma generating furnace applying microwaves guided through the waveguide to said quartz pipe.
Claim 7
Dependent Claim
81 words
Use as claimed in any preceding claim, said hydrogen radical generating means including a microwave oscillator, a hydrogen radical generating vessel provided within said reactor vessel and having a hydrogen radical blowing port, a hydrogen gas introduction path by which hydrogen gas is supplied to said vessel, an antenna in said vessel and receiving microwaves, a member guiding microwaves from said microwave oscillator to said antenna, and a member in said blowing port allowing flow of hydrogen radicals and shielding microwaves.
Claim 8
Dependent Claim
16 words
Use as claimed in claim 7, the microwave shielding member being formed as a wire mesh.
Claim 9
Dependent Claim
19 words
Use as claim in any preceding claim, in which a plurality of such hydrogen radical generating means are provided.
Claim 10
Dependent Claim
26 words
Use as claimed in any preceding claim, in which the or each of said hydrogen radical generating means generates the hydrogen radicals in said reactor vessel.
Claim 11
Dependent Claim
47 words
Use as claimed in any one of claims 1 to 6, said hydrogen radical generating means including a microwave oscillator, a plurality of quartz pipes to which said hydrogen gas is respectively supplied, and a waveguide guiding the microwaves from said microwave oscillator to each quartz pipe.
Claim 12
Dependent Claim
16 words
Use as claimed in any preceding claim, the apparatus further comprising a gas source containing diborane.
Claim 13
Independent Claim
96 words
A method of forming a dense, thin protective film of hydrogenated amorphous material on a substrate, said material containing an ingredient to reduce surface wettability, said method comprising steps of:- (a) forming said film by generating a plasma of a starting gas suitable for forming said material within a deposition space where a substrate is positioned, (b) generating hydrogen radicals by decomposing a hydrogen gas, and (c) introducing a sufficient amount of hydrogen radicals into said deposition space in the proximity of the substrate to cover the surface of the amorphous material film as it forms.
Claim 14
Dependent Claim
19 words
A method as claimed in claim 13, wherein said hydrogen radicals are generated by collision of microwaves and hydrogen.
Claim 15
Dependent Claim
24 words
A method as claimed in claim 13 or 14, wherein said hydrogen radicals are introduced into said deposition space from a plurality of directions.
Claim 16
Independent Claim
172 words
A method of forming a hydrogenated amorphous silicon photosensitive member comprising the steps for:- (a) placing a conductive substrate, to be used for electrophotography, within a reactor vessel, (b) reducing the pressure within the reactor vessel, (c) introducing a first starting gas including Si n H 3n (n ≧ 2) gas and B n H 3n gas into the reduced pressure reactor vessel and generating a plasma from the first starting gas to form a B (boron) doped a-Si:H photosensitive member on the substrate, and (d) introducing a second starting gas including Si n H 3n gas and C n H 2n+2 gas into the reduced pressure reactor vessel and generating plasma from the second starting gas to form a surface protecting layer of a-SiC:H on said a-Si:H photosensitive member, (e) simultaneously with the introduction of the second starting gas into said vessel, introducing a sufficient amount of hydrogen radicals into the reactor vessel in the proximity of the photosensitive member to cover the surface of the protective layer as it forms.
Claim 17
Dependent Claim
84 words
A hydrogenated amorphous silicon carbide expressed by the general formula a-Si 1-x C x :H and having a constitution such that a ratio (TO/TA) of the peak (TO) amplitude appearing in the vicinity of 480 cm⁻¹ and the peak (TA) amplitude appearing in the vicinity of 150 cm⁻¹ observed by laser Raman spectroscopy measurement using an excitation laser of Ar⁺ 488 nm is 2.0 or higher, and such that the content of carbon (x) is in the range of 0.4 ≦ x ≦ 0.8.
Claim 18
Dependent Claim
16 words
Use of the carbide of claim 17 in a surface protecting layer on a photosensitive member.
Claim 19
Dependent Claim
11 words
Use of the carbide of claim 17 in an insulating film.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.