Patent EP0354717A2 successfully refreshed from Google Patents.
EP0354717A2
Expired / Lapsed
EP
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Semi-conductor device and method of manufacturing such a device
Assignee: Seiko Epson Corp
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Filing: 1989-08-02
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Granted: —
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Expires: 2009-08-02
Abstract
Abstract A semi-conductor device has a semi-conductor substrate (101, 301) and a connector (108, 109, 111, 308, 309, 311) separated from one another by an insulating film (102, 302) and connected to one another at a contact region by way of a contact hole formed in the insulating film. The connector includes an Al or Al alloy layer (111, 311) and a barrier layer structure (108, 109, 308, 309), the portion of the barrier layer structure in the contact region being different from the portion of the barrier layer structure on the insulating film, and the portion of the barrier layer structure in the contact region comprising a first layer (109, 309) of a refractory metal nitride and a second layer (108, 308) of a refractory metal silicide. In the manufacture of such a device, the portion of the barrier layer structure in the contact region is subjected to rapid thermal annealing at a temperature of 600°C to 1000°C to create the difference in the two portions.
Inventors
- 👤 Kenji Yokoyama
- 👤 Juri Kato
- 👤 Masashi Ogita
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 20:18
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/047; H10W20/048; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10D64/01125; H10D64/025; H10W20/033; H10W20/071; H10W20/081; H10W20/40; H10W20/41; H10W20/425; Y; Y10; Y10S; Y10S148/00; Y10S148/019
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
107 words
A semi-conductor device having a semi-conductor substrate (101, 301) and a connector (108, 109, 111, 308, 309, 311) separated from one another by an insulating film (102, 302) and connected to one another at a contact region by way of a contact hole formed in the insulating film, the connector including a barrier layer structure (108, 109, 308, 309) and the semi-conductor device being characterised in that the barrier layer structure comprises a first layer (109, 309) of a refractory metal nitride and a second layer (108, 308), which bonds the connector to the insulating film and which, in the contact region, comprises a refractory metal silicide.
Claim 2
Dependent Claim
107 words
A semi-conductor device having a semi-conductor substrate (101, 301) and a connector (108, 109, 111, 308, 309, 311) separated from one another by an insulating film (102, 302) and connected to one another at a contact region by way of a contact hole formed in the insulating film, the connector including a barrier layer structure (108, 109, 308, 309) and the semi-conductor device being characterised in that the barrier layer structure comprises a first layer (109, 309) of a refractory metal nitride and a second layer (108, 308), which bonds the connector to the insulating film and which, in the contact region, comprises a refractory metal silicide.
Claim 3
Dependent Claim
24 words
A semi-conductor device according to claim 1 characterised in that the second layer comprises a refractory metal in the region outside the contact region.
Claim 4
Dependent Claim
25 words
A semi-conductor device according to claim 1 characterised in that the second layer comprises a refractory metal oxide in the region outside the contact region.
Claim 5
Dependent Claim
23 words
A semi-conductor device according to any of claims 1 to 3 characterised in that the first layer contains oxygen atoms throughout its area.
Claim 6
Dependent Claim
21 words
A semi-conductor device according to any preceding claim characterised in that the first layer contains Si atoms in the contact region.
Claim 7
Dependent Claim
32 words
A semi-conductor device according to any preceding claim characterised in that the connector further includes an Al or Al alloy layer (311), and a further layer (312) of a refractory metal nitride.
Claim 8
Independent Claim
104 words
A method of manufacturing a semi-conductor device comprising the steps of forming an insulating film (102, 302) on a semi-conductor substrate (101, 301), forming a contact hole in the insulating film, and forming a connector (108, 109, 111, 308, 309, 311) on the insulating film and in the contact hole, characterised in that the step of forming the connector includes forming a first layer of a refractory metal nitride and a second layer of a refractory metal on the insulating film and in the contact hole, and subjecting the first and second layers to rapid thermal annealing at a temperature from 600°C to 1000°C.
Claim 9
Independent Claim
104 words
A method of manufacturing a semi-conductor device comprising the steps of forming an insulating film (102, 302) on a semi-conductor substrate (101, 301), forming a contact hole in the insulating film, and forming a connector (108, 109, 111, 308, 309, 311) on the insulating film and in the contact hole, characterised in that the step of forming the connector includes forming a first layer of a refractory metal nitride and a second layer of a refractory metal on the insulating film and in the contact hole, and subjecting the first and second layers to rapid thermal annealing at a temperature from 600°C to 1000°C.
Claim 10
Dependent Claim
92 words
A semi-conductor device wherein a connector (108, 109, 111, 308, 309, 311) for connection with a substrate (101, 301) formed from silicon or poly-crystalline silicon or silicide comprises an Al or Al alloy layer (111, 311) and a barrier layer structure (108, 109, 308, 309) characterised in that the barrier layer structure comprises refractory metal silicide and refractory metal nitride in a contact region of the semi-conductor device, and comprises a refractory metal or refractory metal oxide and a refractory metal nitride in a region lying on an insulating film (102, 302).
Claim 11
Dependent Claim
92 words
A semi-conductor device wherein a connector (108, 109, 111, 308, 309, 311) for connection with a substrate (101, 301) formed from silicon or poly-crystalline silicon or silicide comprises an Al or Al alloy layer (111, 311) and a barrier layer structure (108, 109, 308, 309) characterised in that the barrier layer structure comprises refractory metal silicide and refractory metal nitride in a contact region of the semi-conductor device, and comprises a refractory metal or refractory metal oxide and a refractory metal nitride in a region lying on an insulating film (102, 302).
Claim 12
Independent Claim
74 words
A method of manufacturing a semi-conductor device comprising the steps of forming a contact hole in an insulating film (102, 302) on a semi-conductor substrate (101, 301), and characterised by forming a refractory metal and a refractory metal nitride on the insulating film and in the contact hole, applying rapid thermal annealing at a temperature from 600°C to 1000°C, and forming an Al or Al alloy layer (111, 311) on the refractory metal nitride.
Claim 13
Independent Claim
74 words
A method of manufacturing a semi-conductor device comprising the steps of forming a contact hole in an insulating film (102, 302) on a semi-conductor substrate (101, 301), and characterised by forming a refractory metal and a refractory metal nitride on the insulating film and in the contact hole, applying rapid thermal annealing at a temperature from 600°C to 1000°C, and forming an Al or Al alloy layer (111, 311) on the refractory metal nitride.
References Cited (Backward Citations)
No citation records indexed.
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