§
Luxuse
Patent Intelligence
Sign In
← Back to Patent Explorer
EP0354669A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Dry etching apparatus with anhydrous hydrogen fluoride gas generator

Assignee: Stella Chemifa Corp
•
Filing: 1989-07-18
•
Granted: —
•
Expires: 2009-07-18
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract There is provided according to the invention a dry-etching apparatus composed of any of metal, silica, ceramic or combination thereof comprising a processing chamber (3) in which substrates are placed and a diluted anhydrous hydrogen fluoride gas generator (1), the processing chamber (3) being connected to the diluted anhydrous hydrogen fluoride gas generator (1) through a pipe line of such metal as stainless steel or nickel. There is also provided according to the invention a dry-­etching method with the dry-etching apparatus, and a diluted anhydrous hydrogen gas generator (1) used in the dry-etching apparatus and dry-etching method.

Inventors

  • 👤 Ohmi Tadahiro
  • 👤 Miki Masahiro
  • 👤 Maeno Matagoro
  • 👤 Kikuyama Hirohisa

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-09 10:08
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/3244; C; C23; C23F; C23F1/00; C23F1/08; H10; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; H10P70/00; H10P70/10; H10P70/12; H10P70/125; H10P70/20; H10P70/23; H10P70/234

Claims Analysis

Total Claims: 5
Claim 1
Independent Claim 62 words
(1) A dry-ethcing apparatus composed of any of metal, silica, ceramic or combination thereof comprising a processing chamber in which substrates are placed, and a diluted anhydrous hydrogen fluoride gas generator, the apparatus being characterized in that said processing chamber is connected to said diluted anhydrous hydrogen fluoride gas generator through a pipe line of such metal as stainless steel or nickel.
Claim 2
Dependent Claim 33 words
(2) A dry-etching apparatus according to claim 1, wherein an inert gas supply pipe line is connected to a branch point between said processing chamber and said diluted anhydrous hydrogen fluoride gas generator.
Claim 3
Dependent Claim 76 words
(3) A method for etching at least one of films formed on a surface of a substrate comprising the steps of continuously supplying an anhydrous inert gas to the substrate which is placed in a chamber without moisture to be processed by gas phase method, and supplying a diluted anhydrous hydrogen fluoride as for a certain time to the surface of the substrate during the period of continuously supplying an anhydrous inert gas to said substrate.
Claim 4
Dependent Claim 41 words
(4) A method according to claim 3, wherein at least one of the films reactive with hydrogen fluoride is etched away while the other films being left by changing concent­ration of hydrogen fluoride contained in the diluted anhydrous hydrogen fluoride gas.
Claim 5
Dependent Claim 67 words
(5) A diluted anhydrous hydrogen fluoride gas generator comprising a metal container having an inlet and an outlet for inert gas, and a cooler which cools said metal container to a predetermined temperature, said inlet and outlet for inert gas being both disposed in such a manner as not to contact liquid level of a liquefied anhydrous hydrogen fluoride gas with which said metal container is filled.

References Cited (Backward Citations)

No citation records indexed.

USPTO Annuity & Maintenance Windows

Maintenance schedule is calculated for granted US utility patents.

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag