Diode laser with improved means for electrically modulating the emitted light beam intensity including turn-on and turn-off and electrically controlling the position of the emitted laser beam spot

Claim 2

A heterostructure combined semiconductor diode laser and junction field effect transistor device having a centrally located conduction path from a central exposed contact on its top surface through a centrally located semiconductor active laser region disposed between upper and lower opposite conductivity type cladding regions formed over a semiconductor substrate of the same conductivity type as the lower cladding region and having at least one laser stripe channel filled with a semiconductor composition of the same conductivity type as the lower cladding region and formed in the top surface of the substrate which supports the vertically arrayed cladding and active regions and an exposed contact on its underside; characterized in that: first and second semiconductor barrier regions of opposite conductivity type from the substrate are interposed on opposite sides of the laser stripe channel between the lower cladding region and the substrate and electrically isolated one from the other; and first and second exposed contacts are formed on the top surfaces of the respective first and second barrier regions for application of independent bias potentials to the respective barrier regions whereby depletion regions of independently controlled extent are established by the barrier regions in the laser stripe channel for controlling the magnitude of the current through the central conduction path to thereby modulate the intensity of a laser light beam produced in the active region.

Claim 3

A semiconductor diode laser device according to claim 1 further comprising means for applying appropriate value and polarity bias potentials to the central and first and second exposed contacts relative to the bias potential applied to the substrate whereby current conduction through the central conduction path can be pinched off as well as modulated and the emission of laser light from the device can be terminated.

Claim 4

A semiconductor diode laser device according to claim 1 or 2 further comprising means for applying appropriate polarity and relatively small value electrical bias potentials to the first and second exposed contacts whereby the central current conduction path through the device can be moved by variation of the relative extent of the depletion regions formed by the respective barrier regions and the physical position of the emitted light beam waist within the junction plane of the active region can be moved to thereby result in lateral movement in a desired direction of the emitted laser beam output light spot along the laser facet.

Claim 5

A semiconductor diode laser having improved modulation means together with means for electrically adjusting the position of the laser beam output spot along the laser facet and wherein the diode laser comprises a semiconductor substrate having at least one laser stripe channel formed in its top surface, a first cladding semiconductor region of the same conductivity type as the substrate, a semiconductor active lasing region formed over the first cladding semiconductor region, a second semiconductor cladding region of opposite conductivity type to that of the first cladding region formed over the active region, a semiconductor contact region of opposite conductivity type to that of the substrate formed over the second semiconductor cladding region, a third ohmic contact formed on the semiconductor contact region, and a fourth backside ohmic contact formed on the undersurface of the substrate at least below the laser stripe channel; and being characterized in that: first and second semiconductor barrier regions are formed on the top surface of the substrate on each side of the laser stripe channel and electrically isolated one from the other by the laser stripe channel, said barrier regions being of opposite conductivity type from that of the substrate; first and second ohmic contacts are formed on the respective first and second barrier regions and are spaced apart from the laser stripe channel; and said first cladding region being formed over the inner adjacent surfaces of the respective barrier regions and extending into and filling the laser stripe channel but not extending to or contacting the ohmic contacts on the respective first and second barrier regions so as to be electrically isolated from the contacts.

Claim 6

A semiconductor diode laser having improved modulation means together with means for electrically adjusting the position of the laser beam output spot along the laser facet and wherein the diode laser comprises a semiconductor substrate having at least one laser stripe channel formed in its top surface, a first cladding semiconductor region of the same conductivity type as the substrate, a semiconductor active lasing region formed over the first cladding semiconductor region, a second semiconductor cladding region of opposite conductivity type to that of the first cladding region formed over the active region, a semiconductor contact region of opposite conductivity type to that of the substrate formed over the second semiconductor cladding region, a third ohmic contact formed on the semiconductor contact region, and a fourth backside ohmic contact formed on the undersurface of the substrate at least below the laser stripe channel; and being characterized in that: first and second semiconductor barrier regions are formed on the top surface of the substrate on each side of the laser stripe channel and electrically isolated one from the other by the laser stripe channel, said barrier regions being of opposite conductivity type from that of the substrate; first and second ohmic contacts are formed on the respective first and second barrier regions and are spaced apart from the laser stripe channel; and said first cladding region being formed over the inner adjacent surfaces of the respective barrier regions and extending into and filling the laser stripe channel but not extending to or contacting the ohmic contacts on the respective first and second barrier regions so as to be electrically isolated from the contacts.

Claim 7

A semiconductor diode laser according to claim 4 wherein the barrier, cladding and active regions comprise single semiconductor layers epitaxially grown on the substrate in the sequence listed.

Claim 8

A semiconductor diode laser according to claim 4 or 5 wherein the substrate is n-GaAs, the barrier layers are formed by p⁺-GaAs, the first cladding layer comprises n-Al y Ga 1-y As, the active layer comprises Al x Ga 1-x As, the contact region comprises p⁺-GaAs and the second cladding layer comprises p-Al y Ga 1-y As, the first cladding layer is lightly doped and the width d₁ of the laser stripe channel is relatively narrow.

Claim 9

A semiconductor diode laser according to claim 4, 5 or 6 wherein the width d₁ of the laser stripe channel is substantially greater than the thickness d₂ of the first cladding layer (d₂«d₁) whereby the depletion region surrounding the first and second barrier layer is allowed to reach the active layer so as to stop the lasing action upon application of a sufficient bias potential to the contacts on the first and second barrier layers relative to the substrate.

Claim 10

A semiconductor diode laser according to any of claims 4, 5,6 or 7 wherein there are a plurality of parallel, spaced-apart laser stripe channels formed on the top surface of the beginning substrate.

Claim 11

A semiconductor diode laser according to claim 4 wherein the first cladding region is formed by at least two different semiconductor layers epitaxially grown on the top surface of the barrier regions and the substrate with the remaining regions of the diode laser being formed thereover in the sequence listed in claim 1.

Claim 12

A semiconductor diode laser according to claim 9 wherein the substrate is n-GaAs, the barrier layers are formed of p⁺-GaAs, and the cladding layers forming the first cladding region are comprised by a first n-Al w Ga 1-w As layer formed over the inner adjacent surfaces of the first and second barrier regions and extending into and filling the laser stripe channel and a second n-­Al y Ga 1-y As cladding layer interposed between the first n-Al w Ga 1-w As layer and the active region and wherein the first n-Al w Ga 1-w As layer is lightly doped with the second n-Al y Ga 1-y As cladding layer being heavily doped relative to the first cladding layer to assure that the vertical conduction path channel narrowing mechanism dominates during modulation of the diode laser by application of modulating bias potentials to the first and second ohmic contacts formed on the respective first and second barrier regions.

Claim 13

A semiconductor diode laser according to claim 9 wherein the substrate is n-GaAs, the first and second barrier regions each comprise respective single layers of p⁺-Al u Ga 1-u As epitaxially grown on each side of the laser stripe channel, the first cladding region is comprised by adjacent layers of epitaxially grown n-GaAs formed on the surface of the respective first and second p⁺-Al u Ga 1-u As barrier layers on opposite sides thereof but not filling the laser stripe channel and which make up a first cladding layer comprising part of the first cladding region and a second n-Al y Ga 1-y As layer formed over the n-GaAs layers and filling the laser stripe channel to complete the first cladding region, the active region is comprised by an epitaxially grown single Al x Ga 1-x As layer, the second cladding region is comprised by a single epitaxially grown p-Al y Ga 1-y As cladding layer, and the contact region is comprised by a single epitaxially grown layer of p⁺-GaAs.

Claim 14

A semiconductor diode laser according to claim 4 wherein the first and second barrier regions each are formed by at least first and second different semiconductor barrier layers epitaxially grown on the top surface of the substrate on each side of the laser stripe channel so that the combined barrier layers comprising the first barrier region are electrically isolated from the combined barrier layers comprising the second barrier region.

Claim 15

A semiconductor diode laser according to claim 12 wherein the first cladding region extends widthwise across the diode structure over the top second barrier layers of the first and second barrier regions but does not extend down into and fill the stripe channel in the substrate and a lightly doped semiconductor composition of the same conductivity type as the substrate and the first cladding region fills the laser stripe.

Claim 16

A semiconductor diode laser according to claim 13 wherein the first barrier layers in each of the first and second barrier regions which contact the substrate top surface are comprised of p⁺-Al u Ga 1-u As, the second barrier layers are comprised of p-GaAs, the first cladding region comprises n-Al y Ga 1-y As and the lightly doped semiconductor composition filling the laser stripe is comprised of n-Al w Ga 1-w As, the AlAs fraction in the laser stripe channel semiconductor composition is substantially equal to the AlAs fraction in the first cladding region and the first cladding region is heavily doped to prevent depletion regions developed by the first and second barrier regions from extending into the active region.

Claim 17

A semiconductor diode laser according to claim 4 wherein the first cladding region extends widthwise across the diode structure over the top surfaces of the first and second barrier regions but does not extend into and fill the stripe channel in the substrate and a lightly doped semiconductor composition of the same conductivity type as the substrate and the first cladding region fills the laser stripe.

Claim 18

A semiconductor diode laser according to claim 13 wherein the first barrier layers in each of the first and second barrier regions and which contact the substrate top surface are comprised of p⁺-InP, the second barrier layers are comprised of p-InGaAsP, λ g =1.35 um, the first cladding region is comprised of n-InP, the active region is InGaAsP, λ g =1.3 um, the second cladding region is p-InP, the contact region is p⁺-InGaAsP, λ g =1.3 um, and the lightly doped semiconductor composition filling the laser stripe channel is n-­InP.

Claim 19

A semiconductor diode laser according to any of claims 4, 6, 7, 8, 10, 11, 14, 16, wherein the active region consists essentially of either a conventional planar single layer of active semiconductor lasing composition, an essentially planar layer of active semiconductor lasing composition having a large optical cavity formed therein, a multiple quantum well active region or a graded-index, separate-confinement heterostructure active region.