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Patent EP0353818A1 successfully refreshed from Google Patents.
EP0353818A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Process for depositing organosilanes on substrates of silicon or silicon oxide for devices of EOS or CHEMFET type
Assignee: Eni Tecnologie SpA
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Filing: 1989-07-26
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Granted: —
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Expires: 2009-07-26
Abstract
Abstract A process for the deposition of organosilanes, in particular alkyl-siloxanes, on substrates of silicon or of silicon oxide for devices of EOS or CHEMFET type is disclosed, which is characterized in that said process is carried out by means of plasma-deposition.
Inventors
- 👤 Vincenzo Barbarossa
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 21:04
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; G; G01; G01N; G01N27/00; G01N27/26; G01N27/403; G01N27/414; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
35 words
Process for the deposition of organosilanes, and, in particular, of alkyl-siloxanes, on substrates of silicon or silicon oxide of devices of EOS or CHEMFET type, characterized in that said deposition is carried out by plasma-deposition.
Claim 2
Dependent Claim
35 words
Process for the deposition of organosilanes, and, in particular, of alkyl-siloxanes, on substrates of silicon or silicon oxide of devices of EOS or CHEMFET type, characterized in that said deposition is carried out by plasma-deposition.
Claim 3
Dependent Claim
39 words
Process according to claim 1, wherein the plasma-deposition is carried out at a power comprised within the range of from 10 to 100 W, and under a discharge pressure comprised within the range of from 0.1 to 1 torr.
References Cited (Backward Citations)
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