Patent EP0351869A2 successfully refreshed from Google Patents.
EP0351869A2
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Electroluminescent device of compound semiconductor
Assignee: Sharp Corp
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Filing: 1989-07-21
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Granted: —
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Expires: 2009-07-21
Abstract
Abstract The present invention provides an electroluminescent device of Group II - VI compound semiconductor which comprises a substrate, a light-emitting portion, and a conductive portion provided at least between the substrate and the light-emitting portion for injecting into the light-emitting portion the current to be produced in the device by the application of an external voltage.
Inventors
- 👤 Yoshitaka Misugi-Manshon 8-Go Tomomura
- 👤 Masahiko Kitagawa
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 11:33
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/816; H10H20/8162; G; G09; G09F; G09F13/00; G09F13/20; G09F13/22; G09F2013/222; H10H20/052; H10H20/822; H10H20/823; H10H20/8232; H10H29/00; H10H29/10; H10H29/14; H10H29/142; H10W; H10W72/00; H10W72/071; H10W72/075; H10W72/07551; H10W72/07554; H10W72/50; H10W72/531; H10W72/536; H10W72/541; H10W72/547; Y; Y10; Y10S; Y10S428/00; Y10S428/901; Y10S428/917
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
138 words
An electroluminescent device of compound semiconductor which comprises an electroluminescent device body formed on a substrate and providing a light-emitting portion and a conductive portion joined to the lower surface and/or the upper surface of the light-emitting portion, and a pair of electrodes for applying therethrough an external voltage to the body to cause electroluminescence, the conductive portion comprising a conductive layer formed of a Group II - VI compound semiconductor made to have a substantially low resistance by the addition of an impurity element, and a conductive layer part provided in the conductive layer and formed of the Group II - VI compound semiconductor having an impurity element added thereto at a higher concentration than the conductive layer, the conductive layer part having a width to restrict the path of flow of current through the light-emitting portion.
Claim 2
Dependent Claim
138 words
An electroluminescent device of compound semiconductor which comprises an electroluminescent device body formed on a substrate and providing a light-emitting portion and a conductive portion joined to the lower surface and/or the upper surface of the light-emitting portion, and a pair of electrodes for applying therethrough an external voltage to the body to cause electroluminescence, the conductive portion comprising a conductive layer formed of a Group II - VI compound semiconductor made to have a substantially low resistance by the addition of an impurity element, and a conductive layer part provided in the conductive layer and formed of the Group II - VI compound semiconductor having an impurity element added thereto at a higher concentration than the conductive layer, the conductive layer part having a width to restrict the path of flow of current through the light-emitting portion.
Claim 3
Dependent Claim
47 words
A device as defined in claim 1 wherein the Group II - VI compound semiconductor forming the conductive layer and the conductive layer part is ZnS, ZnSe or ZnS y Se 1-y , and the conductive layer and the conductive layer part contain the same impurity element.
Claim 4
Dependent Claim
23 words
A device as defined in claim 1 wherein the substrate is made of a conductive ZnS, ZnSe or ZnS x Se 1-x .
Claim 5
Dependent Claim
23 words
A device as defined in claim 1 wherein the substrate is made of an insulating ZnS, ZnSe or ZnS x Se 1-x .
Claim 6
Dependent Claim
33 words
A device as defined in claim 1 wherein the light-emitting portion is a luminescent layer of the MIS (metal insulator semiconductor) type formed of ZnS or ZnSe having an impurity element added thereto.
Claim 7
Dependent Claim
44 words
A device as defined in claim 1 wherein the light-emitting portion is a luminescent layer of planar structure having a p-n junction formed by the combination of ZnS having a p-type impurity element added thereto and ZnS having an n-type impurity element added thereto.
Claim 8
Dependent Claim
44 words
A device as defined in claim 1 wherein the light-emitting portion is a luminescent layer of planar structure having a p-n junction formed by the combination of ZnSe having a p-type impurity element added thereto and ZnSe having an n-type impurity element added thereto.
Claim 9
Dependent Claim
20 words
A device as defined in claim 1 wherein the conductive layer part is in the form of a solid cylinder.
Claim 10
Dependent Claim
29 words
A device as defined in claim 1 wherein the conductive layer part is in the form of a ring and has a smaller refractive index than the conductive layer.
Claim 11
Dependent Claim
40 words
A device as defined in claim 1 wherein the conductor layer part comprises a plurality of segments having a rectangular section and arranged laterally in a row at a spacing and has a smaller refractive index than the conductive layer.
Claim 12
Dependent Claim
82 words
A device as defined in claim 1 wherein the conductive portion and the light-emitting portion are identical in shape when seen in a plane view, and the conductive layer having the conductive layer part is formed on the substrate, the light-emitting portion being formed on the conductive layer and on the substrate with an electrode forming space left locally on the upper surface of the conductive layer, the pair of electrodes being connected to the conductive layer and the light-emitting portion respectively.
Claim 13
Dependent Claim
134 words
A device as defined in claim 7 or 11 wherein the substrate is an insulating substrate of ZnSe, and the device body comprises a conductive layer of ZnSe having an n-type impurity element added thereto and a conductive layer part of ZnSe with an n-type impurity element added thereto, a light-emitting layer of ZnSe having an n-type impurity element added thereto, a light-emitting layer of ZnSe having a p-type impurity element added thereto, and a conductive layer of ZnSe having a p-type impurity element added thereto, the component layers of the device body being formed on the substrate one over another in the order mentioned, one of the electrodes being made of Au and provided on the uppermost conductive layer, the other electrode being made of In and provided on the lowermost conductive layer.
Claim 14
Dependent Claim
42 words
A device as defined in claim 1 wherein one of the electrodes is connected to the device body, and the other electrode is connected to one surface of the substrate opposite to the other surface thereof having the device body formed thereon.
Claim 15
Dependent Claim
133 words
A device as defined in claim 5 or 13 wherein the substrate is made of ZnS having an n-type impurity element added thereto, and the device body comprises a conductive layer of ZnS containing an n-type impurity element added thereto and having a conductive layer part of ZnS with an n-type impurity element added thereto, a light-emitting layer of ZnS having an n-type impurity element added thereto and an insulating layer of ZnS, the component layers of the device body being formed on the substrate one over another in the order mentioned, one of the electrodes being made of Au and provided on the insulating layer, the other electrode being made of In and provided on one surface of the substrate opposite to the other surface thereof having the device body formed thereon.
Claim 16
Dependent Claim
50 words
A device as defined in claim 1 wherein the light-emitting portion is a luminescent layer of planar structure having a p-n junction formed by the combination of ZnS x Se 1-x having a p-type impurity element added thereto and ZnS y Se 1-y having an n-type impurity element added thereto.
Claim 17
Dependent Claim
51 words
A device as defined in claim 1 wherein the light-emitting portion is a luminescent layer of planar structure having a p-n junction formed by the combination of ZnS x Te 1-x having a p-type impurity element added there to and ZnS y Te 1-y having an n-type impurity element added thereto.
References Cited (Backward Citations)
No citation records indexed.
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