Abstract A semiconductor device comprises a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and an interconnection layer containing an impurity of a second conductivity type. Said interconnection layer (203) connects said first semiconductor region with said second semiconductor region, said first semiconductor region being a drain region (201) of a MOS transistor and said second semiconductor region being a gate electrode (202) of said MOS transistor. A third semiconductor region (204) of said second conductivity type is provided which is formed in said first semiconductor region (201) upon diffusion of the impurity from said interconnection layer (203) to said first semiconductor region. Said third semiconductor region (204) is adapted to form, together with said first semiconductor region (201) a p-n junction diode (204) .
A semiconductor device comprising a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and an interconnection layer containing an impurity of a second conductivity type, wherein said first semiconductor region forms a part of a p-n junction diode, characterized in that - said interconnection layer (203) connects said first semiconductor region with said second semiconductor region, said first semiconductor region being a drain region (201) of a MOS transistor and said second semiconductor region being a gate electrode (202) of said MOS transistor; - a third semiconductor region (204) of said second conductivity type is provided which is formed in said first semiconductor region (201) upon diffusion of the impurity from said interconnection layer (203) to said first semiconductor region having the same crystalline semiconductor material as said third semiconductor region (204), and - said third semiconductor region (204) is adapted to form, together with said first semiconductor region (201) said p-n junction diode (204).
Claim 2
Dependent Claim
164 words
A semiconductor device comprising a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and an interconnection layer containing an impurity of a second conductivity type, wherein said first semiconductor region forms a part of a p-n junction diode, characterized in that - said interconnection layer (203) connects said first semiconductor region with said second semiconductor region, said first semiconductor region being a drain region (201) of a MOS transistor and said second semiconductor region being a gate electrode (202) of said MOS transistor; - a third semiconductor region (204) of said second conductivity type is provided which is formed in said first semiconductor region (201) upon diffusion of the impurity from said interconnection layer (203) to said first semiconductor region having the same crystalline semiconductor material as said third semiconductor region (204), and - said third semiconductor region (204) is adapted to form, together with said first semiconductor region (201) said p-n junction diode (204).
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