Patent EP0348961A2 successfully refreshed from Google Patents.
EP0348961A2
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Fine pattern forming material and pattern forming method
Assignee: Panasonic Holdings Corp
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Filing: 1989-06-29
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Granted: —
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Expires: 2009-06-29
Abstract
Abstract Herein is provided a fine pattern forming method which is prevented from the charging-up phenomenon at the time of electric charged beam writing owing to the use of a polyalkylthiophene type conductive polymeric substance or a quaternary ammonium ion type polymeric substance in a monolayer or multilayer resist.
Inventors
- 👤 Kazuhiko Hashimoto
- 👤 Taichi Koizumi
- 👤 Kenji Kawakita
- 👤 Noboru Nomura
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-26 08:40
CPC Classifications
B; B82; B82Y; B82Y30/00; B82Y10/00; C; C08; C08G; C08G61/00; C08G61/12; C08G61/122; C08G61/123; C08G61/126; C08L; C08L65/00; G; G03; G03F; G03F7/00; G03F7/004; G03F7/038; G03F7/039; C08G2261/00; C08G2261/10; C08G2261/14; C08G2261/141; C08G2261/1412; C08G2261/30; C08G2261/32; C08G2261/322; C08G2261/3223
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
69 words
A fine pattern forming material comprising polyalkylthiophene represented by the following general formula: wherein R₁ represents alkyl group; R₂ represents an alkyl group identical with or different from R₁ or a higher alkyl group having a chlorine-substituted end group; A represents a straight chain or the following group: (in this case, R₁, R₂ and R₃ represent identical or different alkyl group or hydrogen); and n represents a positive integer.
Claim 2
Dependent Claim
69 words
A fine pattern forming material comprising polyalkylthiophene represented by the following general formula: wherein R₁ represents alkyl group; R₂ represents an alkyl group identical with or different from R₁ or a higher alkyl group having a chlorine-substituted end group; A represents a straight chain or the following group: (in this case, R₁, R₂ and R₃ represent identical or different alkyl group or hydrogen); and n represents a positive integer.
Claim 3
Dependent Claim
27 words
A fine pattern forming material comprising polyalkylthiophene according to Claim 1, wherein R₁ and R₂ represent identical or different alkyl group and A represents a straight chain.
Claim 4
Dependent Claim
32 words
A fine pattern forming material comprising polychloroalkylthiophene according to Claim 1, wherein R₁ represents alkyl group, R₂ represents a higher alkyl having a chlorine-substituted end group, and A represents a straight chain.
Claim 5
Dependent Claim
33 words
A fine pattern forming material comprising polyalkylthiophene according to Claim 1, wherein A represents a group of the following formula: and R₁, R₂ and R₃ represent identical or different alkyl group or hydrogen.
Claim 6
Independent Claim
146 words
A method for forming a fine pattern which comprises a step for coating an organic polymeric substance represented by the following general formula: wherein R₁ represents alkyl group, R₂ represents an alkyl group identical with or different from R₁ or a higher alkyl having a chlorine-substituted end group, A represents a straight chain or a group of the following formula: (in this case, R₁, R₂ and R₃ represent identical or different alkyl group or hydrogen), and n represents a positive integer, on a semiconductor substrate, heat-treating it and thereafter coating an inorganic film on said polymer organic film, a step for coating an electron beam resist onto said inorganic film and heat-treating it, a step for writing a pattern on said resist film and developing it, and a step for etching the inorganic film and polymer organic film by using said resist pattern as a mask.
Claim 7
Independent Claim
146 words
A method for forming a fine pattern which comprises a step for coating an organic polymeric substance represented by the following general formula: wherein R₁ represents alkyl group, R₂ represents an alkyl group identical with or different from R₁ or a higher alkyl having a chlorine-substituted end group, A represents a straight chain or a group of the following formula: (in this case, R₁, R₂ and R₃ represent identical or different alkyl group or hydrogen), and n represents a positive integer, on a semiconductor substrate, heat-treating it and thereafter coating an inorganic film on said polymer organic film, a step for coating an electron beam resist onto said inorganic film and heat-treating it, a step for writing a pattern on said resist film and developing it, and a step for etching the inorganic film and polymer organic film by using said resist pattern as a mask.
Claim 8
Dependent Claim
35 words
A fine pattern forming material comprising a quaternary ammonium ion type polymer represented by the following general formula: wherein R₁, R₂ and R₃ represent identical or different alkyl group, and n represents a positive integer.
Claim 9
Dependent Claim
35 words
A fine pattern forming material comprising a quaternary ammonium ion type polymer represented by the following general formula: wherein R₁, R₂ and R₃ represent identical or different alkyl group, and n represents a positive integer.
Claim 10
Dependent Claim
34 words
A fine pattern forming material comprising a quaternary ammonium ion type polymer represented by the following general formula: wherein R₁ and R₂ represent identical or different alkyl group, and n represents a positive integer.
Claim 11
Dependent Claim
34 words
A fine pattern forming material comprising a quaternary ammonium ion type polymer represented by the following general formula: wherein R₁ and R₂ represent identical or different alkyl group, and n represents a positive integer.
Claim 12
Independent Claim
133 words
A method for forming a fine pattern which comprises a step for coating a polymer organic film on a semiconductor substrate, heat-treating it, thereafter coating an inorganic film on said polymer organic film and heat-treating it, a step for coating a resist on said inorganic film, a step for coating a quaternary ammonium ion type polymer represented by the following general formula: wherein R₁, R₂ and R₃ represent identical or different alkyl group and n represents a positive integer, or the following general formula: wherein R₁ and R₂ represent identical or different alkyl group and n represents a positive integer, on said resist and heat-treating it, and a step for writing a pattern, thereafter developing it and etching the inorganic film and polymer organic film by using the resist pattern as a mask.
Claim 13
Independent Claim
133 words
A method for forming a fine pattern which comprises a step for coating a polymer organic film on a semiconductor substrate, heat-treating it, thereafter coating an inorganic film on said polymer organic film and heat-treating it, a step for coating a resist on said inorganic film, a step for coating a quaternary ammonium ion type polymer represented by the following general formula: wherein R₁, R₂ and R₃ represent identical or different alkyl group and n represents a positive integer, or the following general formula: wherein R₁ and R₂ represent identical or different alkyl group and n represents a positive integer, on said resist and heat-treating it, and a step for writing a pattern, thereafter developing it and etching the inorganic film and polymer organic film by using the resist pattern as a mask.
References Cited (Backward Citations)
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