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Patent EP0347613A2 successfully refreshed from Google Patents.
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EP0347613A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Semiconductor device with pressure connection means

Assignee: Mitsubishi Electric Corp
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Filing: 1989-05-29
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Granted: —
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Expires: 2009-05-29
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Abstract

Abstract According to the present invention, one surface of a resistor plate (7) is arranged to face first electrodes (4) which are formed on a first region of one surface of a semiconductor element assembly. One surface of a conductor plate (5) is arranged to face the other surface of the resistor plate (7). Pressure is applied to the other surfaces of the semiconductor element assembly and the conductor plate (5), to form junction surfaces between the first electrodes (4) and the resistor plate (7) as well as between the resistor plate (7) and the conductor plate (5) to connect them with pressure. This structure is equivalent to inserting resistors between the first electrodes (4) and the conductor plate (7). Such resistors uniformalize distributed or partial currents flowing in respective parts of the semiconductor element assembly, whereby any local current concentration can be prevented, to thereby improve switching characterizistics and controllable gate turn-off current.

Inventors

  • 👤 Futoshi C/O Mitsubishi Denki K.K. Tokunoh

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-09 12:35
CPC Classifications
H; H10; H10W; H10W72/00; H10W20/00; H10W20/40; H10W20/482; H10W20/484; H10W44/00; H10W44/401

Claims Analysis

Total Claims: 5
Claim 1
Independent Claim 136 words
A semiconductor device comprising: -a semiconductor element assembly having a plurality of semiconductor elements (2) connected in parallel, -a plurality of first electrodes (4) being arranged on one surface side of the semiconductor element assembly to be connected with the plurality of semiconductor elements (2), respectively, -a resistor plate (7) being so arranged that its one surface faces the surfaces of the first electrodes (4), -a conductor plate (5) being so arranged that its one surface faces the other surface of the resistor plate (7), -pressure connection means for applying pressure to the other surfaces of the semiconductor element assembly and conductor plate (5) to create junction surfaces between the first electrodes (4) and the resistor plate (7) as well as between the resistor plate (7) and the conductor plate (5) when connecting them by pressure.
Claim 2
Dependent Claim 136 words
A semiconductor device comprising: -a semiconductor element assembly having a plurality of semiconductor elements (2) connected in parallel, -a plurality of first electrodes (4) being arranged on one surface side of the semiconductor element assembly to be connected with the plurality of semiconductor elements (2), respectively, -a resistor plate (7) being so arranged that its one surface faces the surfaces of the first electrodes (4), -a conductor plate (5) being so arranged that its one surface faces the other surface of the resistor plate (7), -pressure connection means for applying pressure to the other surfaces of the semiconductor element assembly and conductor plate (5) to create junction surfaces between the first electrodes (4) and the resistor plate (7) as well as between the resistor plate (7) and the conductor plate (5) when connecting them by pressure.
Claim 3
Dependent Claim 18 words
The semiconductor device in accordance with claim 1, wherein the semiconductor element assembly is a gate turn-off thyristor.
Claim 4
Dependent Claim 19 words
The semiconductor device in accordance with claim 1, wherein the semiconductor element assembly is an electrostatic induction type thyristor.
Claim 5
Dependent Claim 25 words
The semiconductor device in accordance with any of claims 1 to 3, wherein the resistor plate (7) is a thin plate having a uniform thickness.

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