Patent EP0346131A2 successfully refreshed from Google Patents.
EP0346131A2
Expired / Lapsed
EP
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Dry etching apparatus
Assignee: Canon Anelva Corp
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Filing: 1989-06-09
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Granted: —
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Expires: 2009-06-09
Abstract
Abstract A dry etching apparatus comprising a vacuum chamber provided therein with an RF electrode (2). On the RF electrode at least one object substrate (9) is placed. The RF electrode is covered with substrate beds and detachable dielectric members. The substrate beds comprise a dielectric portion (5) and a conductive portion (4a) provided just under the dielectric portion. The conductive portion is equipotential in terms of direct current to the RF electrode. A passageway comprising gaps between the dielectric members, gaps between the dielectric members and the substrate beds, etc. extends from the surface of the RF electrode to the plasma space. The passageways are so crooked in cross section perpendicular to the RF electrode that the plasma space can not struturally be viewed from the surface of the RF electrode. To the RF electrode is applied a negative DC voltage having larger absolute value that that of a negative self-bias voltage at the object substrate induced by plasma discharge.
Inventors
- 👤 Tsutomu C/O Anelva Corporation Tsukada
- 👤 Toshio C/O Anelva Corporation Tamaki
- 👤 Tatsuhiko C/O Anelva Corporation Yoshida
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 20:07
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32082; H01J37/32431; H01J37/32532; H01J37/32541
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
245 words
A dry etching apparatus comprising a vacuum chamber equipped with means for introducing a gas into the vacuum chamber and provided with an RF electrode, to which a radiofrequency voltage is appliable and on which at least one object substrate(s) is placed, and with a earthed electrode between which and said RF electrode a plasma of said gas is to be generated for etching said substrate(s); (a) wherein the entire suface of said RF electrode, which faces said plasma is covered with at least one substrate bed(s) and detachable dielectric members; (b) wherein said substrate bed(s) comprises a dielectric portion having a surface on which said substrate is to be placed and a conductive portion provided under said dielectric portion and being equipotential in terms of direct current to said RF electrode; (c) wherein at least one passageway(s) comprising at least one gap(s) between said dielectric members, a gap(s) between said dielectric members and said substrate bed(s), and extending from said facing surface of said RF electrode to the plasma space is so crooked when viewed in cross section perpendicular to said RF electrode that said plasma space cannot be structurally viewed from said facing surface of said RF electrode; and (d) wherein said RF electrode is provided with means for applying thereto through a radiofrequency filter a negative DC voltage having a larger absolute value than that of a negative self-bias voltage at said object substrate(s) induced by plasma discharge during radiofrequency power supply.
Claim 2
Dependent Claim
245 words
A dry etching apparatus comprising a vacuum chamber equipped with means for introducing a gas into the vacuum chamber and provided with an RF electrode, to which a radiofrequency voltage is appliable and on which at least one object substrate(s) is placed, and with a earthed electrode between which and said RF electrode a plasma of said gas is to be generated for etching said substrate(s); (a) wherein the entire suface of said RF electrode, which faces said plasma is covered with at least one substrate bed(s) and detachable dielectric members; (b) wherein said substrate bed(s) comprises a dielectric portion having a surface on which said substrate is to be placed and a conductive portion provided under said dielectric portion and being equipotential in terms of direct current to said RF electrode; (c) wherein at least one passageway(s) comprising at least one gap(s) between said dielectric members, a gap(s) between said dielectric members and said substrate bed(s), and extending from said facing surface of said RF electrode to the plasma space is so crooked when viewed in cross section perpendicular to said RF electrode that said plasma space cannot be structurally viewed from said facing surface of said RF electrode; and (d) wherein said RF electrode is provided with means for applying thereto through a radiofrequency filter a negative DC voltage having a larger absolute value than that of a negative self-bias voltage at said object substrate(s) induced by plasma discharge during radiofrequency power supply.
Claim 3
Dependent Claim
26 words
A dry etching apparatus as claimed in claim 1, wherein said passageway(s) is bent in a plurality of places in cross-section perpendicular to said RF electrode.
Claim 4
Dependent Claim
56 words
A dry etching apparatus as claimed in claim 1 or 2, wherein said substrate bed(s) has a protruding portion on which a substrate is to be placed, and around which a detachable dielectric ring having a smaller, inner circumference and a larger outer circumference than the circumference of said substrate is provided as a dielectric member.
Claim 5
Dependent Claim
45 words
A dry etching apparatus as claimed in any one of the preceding claims wherein said substrate bed(s) comprises a convex conductive portion and a dielectric portion provided on all surfaces of said convex conductive portion except for a surface in contact with said RF electrode.
Claim 6
Dependent Claim
63 words
A dry etching apparatus as claimed in any one of the preceding claims wherein said substrate bed(s) comprises a dielectric portion made of a ceramic material which forms the major structure thereof, and a conductive portion embedded in said major structure in the proximity of a surface thereof on which the substrate is to be placed and electrically connected to said RF electrode.
Claim 7
Dependent Claim
19 words
A dry etching apparatus according to any one of the preceding claims wherein said gas is a reactive gas.
Claim 8
Independent Claim
19 words
A method for dry etching a substrate using an apparatus according to any one of claims 1 to 6.
References Cited (Backward Citations)
No citation records indexed.
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