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Patent EP0346120A2 successfully refreshed from Google Patents.
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EP0346120A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Semiconductor device

Assignee: Furukawa Electric Co Ltd
•
Filing: 1989-06-08
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Granted: —
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Expires: 2009-06-08
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Abstract

Abstract A semiconductor device having a current blocking layer (15) and confinement current passing part (14, 18) formed on a semiconductor layer, and an electrode metal layer (19) disposed on said current blocking layer (15) and confinement current passing part (14,18), wherein the current blocking layer (15) is made of semiconductor material, and the contact resistance of current blocking layer (15) and electrode metal layer (19) is higher than the contact resistance of electrode metal layer (19) and semiconductor layer, and/or the resistivity of the current blocking layer (15) is higher than that of the semiconductor layer.

Inventors

  • 👤 Toru C/O Yokohama Lab. The Furukawa Fukushima
  • 👤 Tsunehisa C/O Yokohama Laboratory Takabayashi
  • 👤 Mikio C/O Yokohama Lab. Ogai

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-08 03:44
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/2054; H01S5/2059

Claims Analysis

Total Claims: 3
Claim 1
Independent Claim 85 words
A semiconductor device having a current blocking layer and confinement current passing part formed on a semiconductor layer, and an electrode metal layer disposed on said current blocking layer and confinement current passing part, wherein the current blocking layer is made of semiconductor material, and the contact resistance of current blocking layer and electrode metal layer is higher than the contact resistance of electrode metal later and semiconductor later, and/or the resistivity of the current blocking layer is higher than that of the semiconductor layer.
Claim 2
Dependent Claim 85 words
A semiconductor device having a current blocking layer and confinement current passing part formed on a semiconductor layer, and an electrode metal layer disposed on said current blocking layer and confinement current passing part, wherein the current blocking layer is made of semiconductor material, and the contact resistance of current blocking layer and electrode metal layer is higher than the contact resistance of electrode metal later and semiconductor later, and/or the resistivity of the current blocking layer is higher than that of the semiconductor layer.
Claim 3
Dependent Claim 41 words
A semiconductor device according to claim 1, wherein an insulation film possessing a current confinement window wider in window area than the current confinement window of the current blocking layer is intervening between the current blocking layer and electrode metal layer.

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