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EP0345757A2
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An ashing method for removing an organic film on a substance of a semiconductor device under fabrication
Assignee: Fujitsu Ltd
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Filing: 1989-06-07
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Granted: —
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Expires: 2009-06-07
Abstract
Abstract Plasma ashing methods, each for removing a resist material (10) formed on a ground layer (9) of a semiconductor device (8) under fabrication, are performed by using three kinds of reactant gases each composed of three different gases. The plasma ashing is performed: in an ashing rate of 0.5 µm/min at 160°C and with activation energy of 0.4 eV when a reactant gas composed of oxygen, water vapor and nitrogen is used; in an ashing rate of 0.5 µm/min at 140°C, with activation energy of 0.38 eV and without etching the ground layer (9) when a reactant gas composed of oxygen, water vapor and tetrafluoromethane is used; and in an ashing rate of 0.5 µm/min at 140°C, with activation energy of 0.4 eV when a reactant gas composed of oxygen, hydrogen and nitrogen is used.
Inventors
- 👤 Keisuke Shinagawa
- 👤 Shuzo Fujimura
- 👤 Kenichi Hikazutani
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 16:02
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/286; H10P50/287; G; G03; G03F; G03F7/00; G03F7/26; G03F7/42; G03F7/427
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
152 words
A ashing method for removing an organic material formed on a ground substance of a semiconductor device (8), said method comprising the steps of: providing ashing means for performing the removement of the organic material by using a reactant gas plasma; supplying a mixed gas consisting essentially of oxygen, water vapor and a first additional gas to said plasma ashing means; controlling flow ratios of the oxygen, the water vapor and the first additional gas of said mixed gas for obtaining a first reactant gas with which the plasma ashing is performed in a ashing rate larger than and with activation energy at most equal to, those respectively in the case of using the reactant gas composed of oxygen and water vapor; generating plasma of the first reactant gas for producing active species of the first reactant gas; and removing the organic material by using the active species, leaving the ground substance.
Claim 2
Dependent Claim
152 words
A ashing method for removing an organic material formed on a ground substance of a semiconductor device (8), said method comprising the steps of: providing ashing means for performing the removement of the organic material by using a reactant gas plasma; supplying a mixed gas consisting essentially of oxygen, water vapor and a first additional gas to said plasma ashing means; controlling flow ratios of the oxygen, the water vapor and the first additional gas of said mixed gas for obtaining a first reactant gas with which the plasma ashing is performed in a ashing rate larger than and with activation energy at most equal to, those respectively in the case of using the reactant gas composed of oxygen and water vapor; generating plasma of the first reactant gas for producing active species of the first reactant gas; and removing the organic material by using the active species, leaving the ground substance.
Claim 3
Dependent Claim
18 words
A method according to claim 1, wherein said removing step is performed in down stream from the plasma.
Claim 4
Independent Claim
25 words
A method according to claims 1 or 2, wherein the first additional gas is selected from the group consisting of hydrogen, nitrogen and nitrogen oxide.
Claim 5
Dependent Claim
86 words
A method according to claim 3, wherein said flow ratios of the oxygen, the water vapor and the first additional gas selected to the nitrogen of the mixed gas is controlled so that a flow ratio of the water vapor to a gas composed of the oxygen and the water vapor is set so as to be more than 1% and a flow ratio of the nitrogen to a gas composed of the oxygen and the nitrogen is set so as to be more than 5%.
Claim 6
Dependent Claim
33 words
A method according to claim 4 further comprising the step of setting a temperature of the organic material at higher than 160°C, so as to obtain an ashing rate larger than 0.5 µm/min.
Claim 7
Dependent Claim
162 words
A plasma ashing method for removing an organic material formed on a ground substance of a semiconductor device (8), said method comprising the steps of: providing plasma ashing means for performing the removement of the organic material by plasma ashing, using a reactant gas; supplying a mixed gas consisting essentially of oxygen, water vapor and a second additional gas to said plasma ashing means; controlling flow ratios of the oxygen, the water vapor and the second additional gas of said mixed gas for obtaining a second reactant gas with which the plasma ashing is performed in a ashing rate larger than and with activation energy at most equal to, those respectively in the case of using the reactant gas composed of oxygen and water vapor, and without etching the ground substance; generating plasma of the second reactant gas for producing active species of the second reactant gas; and removing the organic material by using the active species, without etching the ground substance.
Claim 8
Dependent Claim
162 words
A plasma ashing method for removing an organic material formed on a ground substance of a semiconductor device (8), said method comprising the steps of: providing plasma ashing means for performing the removement of the organic material by plasma ashing, using a reactant gas; supplying a mixed gas consisting essentially of oxygen, water vapor and a second additional gas to said plasma ashing means; controlling flow ratios of the oxygen, the water vapor and the second additional gas of said mixed gas for obtaining a second reactant gas with which the plasma ashing is performed in a ashing rate larger than and with activation energy at most equal to, those respectively in the case of using the reactant gas composed of oxygen and water vapor, and without etching the ground substance; generating plasma of the second reactant gas for producing active species of the second reactant gas; and removing the organic material by using the active species, without etching the ground substance.
Claim 9
Dependent Claim
18 words
A method according to claim 6, wherein said removing step is performed in down stream from the plasma.
Claim 10
Independent Claim
28 words
A method according to claims 6 or 7, wherein the second additional gas is selected from a halogenide group consisting of tetrafluoromethane, chlorine, nitrogen trifluoride, hexafluoroethane and trifluoromethane.
Claim 11
Dependent Claim
91 words
A method according to claim 8, wherein said flow ratios of the oxygen, the water vapor and the second additional gas selected to terafluoromethane is controlled so that a flow ratio of the water vapor to a gas composed of the oxygen and the water vapor is set so as to be more than 1% and a flow ratio of the terafluoromethane to a gas composed of the the water vapor and the terafluoromethane is set so that a number of hydrogen atoms is greater than a number of halogen atoms.
Claim 12
Dependent Claim
33 words
A method according to claim 9 further comprising the step of setting a temperature of the organic material at higher than 140°C, so as to obtain an ashing rate larger than 0.5 µm/min.
Claim 13
Dependent Claim
161 words
A plasma ashing method for removing an organic material formed on a ground substance of a semiconductor device (8), said method comprising the steps of: providing plasma ashing means for performing the removement of the organic material by plasma ashing, using a reactant gas; supplying a mixed gas consisting essentially of oxygen, hydrogen which is larger than 1% of the mixed gas and a third additional gas to said plasma ashing means; controlling flow ratios of the oxygen, the hydrogen and the third additional gas of said mixed gas for obtaining a third reactant gas with which the plasma ashing is performed in a ashing rate larger than and with activation energy at most equal to, those respectively in the case of using the reactant gas composed of oxygen and hydrogen; generating plasma of the third reactant gas for producing active species of the third reactant gas; and removing the organic material by using the active species, leaving the ground substance.
Claim 14
Dependent Claim
161 words
A plasma ashing method for removing an organic material formed on a ground substance of a semiconductor device (8), said method comprising the steps of: providing plasma ashing means for performing the removement of the organic material by plasma ashing, using a reactant gas; supplying a mixed gas consisting essentially of oxygen, hydrogen which is larger than 1% of the mixed gas and a third additional gas to said plasma ashing means; controlling flow ratios of the oxygen, the hydrogen and the third additional gas of said mixed gas for obtaining a third reactant gas with which the plasma ashing is performed in a ashing rate larger than and with activation energy at most equal to, those respectively in the case of using the reactant gas composed of oxygen and hydrogen; generating plasma of the third reactant gas for producing active species of the third reactant gas; and removing the organic material by using the active species, leaving the ground substance.
Claim 15
Dependent Claim
18 words
A method according to claim 11, wherein said removing step is performed in down stream from the plasma.
Claim 16
Independent Claim
24 words
A method according to claims 11 or 12, wherein the third additional gas is selected from the group consisting of nitrogen and nitrogen oxide.
Claim 17
Dependent Claim
82 words
A method according to claim 13, wherein said flow ratios of the oxygen, the water vapor and the third additional gas selected to the nitrogen is controlled so that a flow ratio of the hydrogen to a gas composed of the oxygen, the hydrogen and the nitrogen is set so as to be more than 3% and a flow ratio of the nitrogen to a gas composed of the oxygen and the nitrogen is set so as to be more than 5%.
Claim 18
Dependent Claim
33 words
A method according to claim 14 further comprising the step of setting a temperature of the organic material at higher than 140°C, so as to obtain an ashing rate larger than 0.5 µm/min.
Claim 19
Dependent Claim
159 words
A plasma ashing method for removing an organic material formed on a ground substance of a semiconductor device (8), said method comprising the steps of: providing plasma ashing means for performing the removement of the organic material by plasma ashing, using a reactant gas; supplying a mixed gas consisting essentially of oxygen, hydrogen and a fourth additional gas to said plasma ashing means; controlling flow ratios of the oxygen, the hydrogen and the fourth additional gas of said mixed gas for obtaining a fourth reactant gas with which the plasma ashing is performed in a ashing rate larger than and with activation energy at most equal to, those respectively in the case of using the reactant gas composed of oxygen and hydrogen, and without etching the ground substance; generating plasma of the fourth reactant gas for producing active species of the fourth reactant gas; and removing the organic material by using the active species, without etching the ground substance.
Claim 20
Dependent Claim
159 words
A plasma ashing method for removing an organic material formed on a ground substance of a semiconductor device (8), said method comprising the steps of: providing plasma ashing means for performing the removement of the organic material by plasma ashing, using a reactant gas; supplying a mixed gas consisting essentially of oxygen, hydrogen and a fourth additional gas to said plasma ashing means; controlling flow ratios of the oxygen, the hydrogen and the fourth additional gas of said mixed gas for obtaining a fourth reactant gas with which the plasma ashing is performed in a ashing rate larger than and with activation energy at most equal to, those respectively in the case of using the reactant gas composed of oxygen and hydrogen, and without etching the ground substance; generating plasma of the fourth reactant gas for producing active species of the fourth reactant gas; and removing the organic material by using the active species, without etching the ground substance.
Claim 21
Dependent Claim
18 words
A method according to claim 16, wherein said removing step is performed in down stream from the plasma.
Claim 22
Independent Claim
28 words
A method according to claims 16 or 17, wherein said fourth additional gas is selected from a halogenide group consisting of tetrafluoromethane, chlorine, nitrogen trifluoride, hexafluoroethane and trifluoromethane.
References Cited (Backward Citations)
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