Patent EP0344925A2 successfully refreshed from Google Patents.
EP0344925A2
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EP
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Superconductively loaded semiconductor logic device
Assignee: Texas Instruments Inc
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Filing: 1989-05-05
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Granted: —
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Expires: 2009-05-05
Abstract
Abstract A circuit having a first logic inverter. The inverter comprises an input device (12) having an electrode (14) for receiving an input signal, a first terminal (16) for connection to a reference potential and a second terminal (18) for providing an output signal. A load device (22) formed of superconductive material is positioned between the second terminal (18) and a connection point (24) for receiving a second voltage potential. The superconducting device (22) operates as a non-linear load between the connection point (24) and the second terminal (18) when conducting a current in excess of a critical current density J C .
Inventors
- 👤 Albert H. Taddiken
- 👤 Han-Tzong Yuan
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 22:04
CPC Classifications
H; H03; H03K; H03K19/00; H03K19/20; H03K3/00; H03K3/02; H03K3/38; H03K19/02; H03K19/08; H03K19/094; H03K19/195; H03K3/353; H03K3/356; H03K3/356017; H03K3/356052
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
88 words
A circuit including a first logic inverter comprising: an input device having an electrode for receiving an input signal, a first terminal for connection to a reference potential and a second terminal for providing an output signal; and a load device formed of superconductive material, positioned between the second terminal and a connection point for receiving a second voltage potential, the superconductive material having a characteristic critical current density J C and operable as a non-linear load when conducting a current density in excess of J C .
Claim 2
Dependent Claim
88 words
A circuit including a first logic inverter comprising: an input device having an electrode for receiving an input signal, a first terminal for connection to a reference potential and a second terminal for providing an output signal; and a load device formed of superconductive material, positioned between the second terminal and a connection point for receiving a second voltage potential, the superconductive material having a characteristic critical current density J C and operable as a non-linear load when conducting a current density in excess of J C .
Claim 3
Dependent Claim
23 words
The circuit of Claim 1 wherein said input device is a field effect transistor with a gate region for receiving the input signal.
Claim 4
Dependent Claim
11 words
The circuit of Claim 2 wherein said transistor is a MOSFET.
Claim 5
Dependent Claim
13 words
The circuit of Claim 1 wherein said input device is a bipolar transistor.
Claim 6
Dependent Claim
14 words
The circuit of Claim 1 wherein said input device is a GaAs heterostructure transistor.
Claim 7
Dependent Claim
13 words
The circuit of Claim 1 wherein the superconductive material is a ceramic oxide.
Claim 8
Dependent Claim
13 words
The circuit of Claim 1 wherein the superconductive material comprises YBa₂Cu₃O x .
Claim 9
Dependent Claim
29 words
The circuit of Claim 1 further comprising a second logic inverter, the output of each inverter connected to the input of the other to form a static memory cell.
Claim 10
Dependent Claim
73 words
The circuit of Claim 1 further comprising: a second logic inverter, the output of each inverter connected to the input of the other to form a static random access memory cell; a bit line coupled to an input device of each logic inverter; a pass transistor positioned to selectively control current flow between each bit line and an input transistor; and a word line coupled to gate current flow through each pass transistor.
Claim 11
Dependent Claim
28 words
The circuit of Claim 1 further comprising one or more additional input devices having source/drain regions connected in series with said load device to form a NAND gate.
Claim 12
Dependent Claim
26 words
The circuit of Claim 1 further comprising one or more additional input devices, said devices coupled in parallel across source/drain regions to form a NOR gate.
Claim 13
Dependent Claim
94 words
A circuit comprising: a first node for receiving a first voltage potential; a second node for receiving a second voltage potential; a device positioned between said first and second nodes and comprising superconductive material having a critical current density J C , said device operable as a non-linear load when conducting a current density in excess of J C ; and a transistor connected between said first and second nodes in series with said device, said transistor having first and second electrodes for effecting said connection and a third electrode for receiving a signal.
Claim 14
Dependent Claim
94 words
A circuit comprising: a first node for receiving a first voltage potential; a second node for receiving a second voltage potential; a device positioned between said first and second nodes and comprising superconductive material having a critical current density J C , said device operable as a non-linear load when conducting a current density in excess of J C ; and a transistor connected between said first and second nodes in series with said device, said transistor having first and second electrodes for effecting said connection and a third electrode for receiving a signal.
Claim 15
Dependent Claim
15 words
The circuit of Claim 12 wherein said device is formed of a type two superconductor.
Claim 16
Dependent Claim
14 words
The circuit of Claim 12 wherein said superconductive device is a two terminal device.
Claim 17
Dependent Claim
13 words
The circuit of Claim 12 wherein the superconductive material is a ceramic oxide.
Claim 18
Dependent Claim
13 words
The circuit of Claim 12 wherein the superconductive material is YBa₂Cu₃O x .
References Cited (Backward Citations)
No citation records indexed.
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