Patent US720422A successfully refreshed from Google Patents.
Patent EP0343645A2 successfully refreshed from Google Patents.
EP0343645A2
Expired / Lapsed
EP
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Electron-emitting device and electron-beam generator making use of it
Assignee: Canon Inc
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Filing: 1989-05-24
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Granted: —
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Expires: 2009-05-24
Abstract
Abstract An electron-emitting device comprises electrodes mutually opposingly provided on the surface of a substrate, and an electron-emitting area provided between the electrodes, wherein a conductive film having an electrical resistance greater than that of said electron-emitting area and not more than 10¹⁰ Ω/square is provided on the surface of the substrate at least at the peripheral area of the electron-emitting area in the state that it is electrically connected to said electrodes.
Inventors
- 👤 Hidetoshi Suzuki
- 👤 Ichiro Nomura
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 16:56
CPC Classifications
H; H01; H01J; H01J1/00; H01J1/02; H01J1/30; H01J1/316
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
72 words
An electron-emitting device, comprising electrodes mutually opposingly provided on the surface of a substrate, and an electron-emitting area provided between said electrodes, wherein a conductive film having an electrical resistance greater than that of said electron-emitting area and not more than 10¹⁰ Ω/square is provided on the surface of the substrate at least at the peripheral area of said electron-emitting area in the state that it is electrically connected to said electrodes.
Claim 2
Dependent Claim
72 words
An electron-emitting device, comprising electrodes mutually opposingly provided on the surface of a substrate, and an electron-emitting area provided between said electrodes, wherein a conductive film having an electrical resistance greater than that of said electron-emitting area and not more than 10¹⁰ Ω/square is provided on the surface of the substrate at least at the peripheral area of said electron-emitting area in the state that it is electrically connected to said electrodes.
Claim 3
Dependent Claim
43 words
The electron-emitting device according to Claim 1, wherein said conductive film comprises a deposited film comprising a boride, a carbide, a nitride, a metal, a metal oxide, a semiconductor, or carbon, and having a specific resistance of ρ < 1 x 10⁴ Ω·cm.
Claim 4
Dependent Claim
56 words
The electron-emitting device according to Claim 2, wherein said conductive film has a film thickness t (cm) represented by the following relationship (1): ρ/R d > t > ρ·10⁻¹⁰ (1) wherein ρ represents specific resistance (Ω·cm) of the material used in said conductive film, and R d represents a sheet resistance (Ω/square) of said electron-emitting area.
Claim 5
Dependent Claim
41 words
The electron-emitting device according to Claim 1, wherein said conductive film comprises a coated film comprising a boride, a carbide, a nitride, a metal oxide, a semiconductor, or carbon, and having a specific resistance of ρ ≧ 1 x 10⁴ Ω·cm.
Claim 6
Dependent Claim
43 words
The electron-emitting device according to Claim 1, wherein said electron-emitting area has an electrical resistance of from 1 x 10⁴ to 1 x 10⁷ Ω/square and said conductive film has an electrical resistance of from 1 x 10⁸ to 1 x 10¹⁰ Ω/square.
Claim 7
Dependent Claim
13 words
The electron-emitting device according to Claim 1, wherein said substrate comprises an insulator.
Claim 8
Dependent Claim
80 words
An electron-beam generator, comprising electrodes mutually opposingly provided on the surface of a substrate; an electron-emitting area provided between said electrodes; a conductive film having an electrical resistance greater than that of said electron-emitting area and not more than 10¹⁰ Ω/square, provided on the surface of the substrate at least at the peripheral area of said electron-emitting area in the state that it is electrically connected to said electrodes; and an electric source for applying a voltage between said electrode.
Claim 9
Dependent Claim
80 words
An electron-beam generator, comprising electrodes mutually opposingly provided on the surface of a substrate; an electron-emitting area provided between said electrodes; a conductive film having an electrical resistance greater than that of said electron-emitting area and not more than 10¹⁰ Ω/square, provided on the surface of the substrate at least at the peripheral area of said electron-emitting area in the state that it is electrically connected to said electrodes; and an electric source for applying a voltage between said electrode.
Claim 10
Dependent Claim
43 words
The electron-beam generator according to Claim 7, wherein said conductive film comprises a deposited film comprising a boride, a carbide, a nitride, a metal, a metal oxide, a semiconductor, or carbon, and having a specific resistance of ρ < 1 x 10⁴ Ω·cm.
Claim 11
Dependent Claim
56 words
The electron-beam generator according to Claim 8, wherein said conductive film has a film thickness t (cm) represented by the following relationship (1): ρ/R d > t > ρ·10⁻¹⁰ (1) wherein ρ represents specific resistance (Ω·cm) of the material used in said conductive film, and R d represents a sheet resistance (Ω/square) of said electron-emitting area.
Claim 12
Dependent Claim
41 words
The electron-beam generator according to Claim 7, wherein said conductive film comprises a coated film comprising a boride, a carbide, a nitride, a metal oxide, a semiconductor, or carbon, and having a specific resistance of ρ ≧ 1 x 10⁴ Ω·cm.
Claim 13
Dependent Claim
43 words
The electron-beam generator according to Claim 7, wherein said electron-emitting area has an 27ectrical resistance of from 1 x 10⁴ to 1 x 10⁷ Ω/square and said conductive film has an electrical resistance of from 1 x 10⁸ to 1 x 10¹⁰ Ω/square.
Claim 14
Dependent Claim
13 words
The electron-beam generator according to Claim 7, wherein said substrate comprises an insulator.
References Cited (Backward Citations)
No citation records indexed.
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