Patent EP0342925A2 successfully refreshed from Google Patents.
EP0342925A2
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EP
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Active matrix panel
Assignee: Seiko Epson Corp
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Filing: 1989-05-16
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Granted: —
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Expires: 2009-05-16
Abstract
Abstract An active matrix panel comprises a picture element matrix (22), which is mounted on a transparent substrate (71, 86) and which includes a plurality of gate lines (24, 25), a plurality of source lines (26, 27, 28) and a plurality of picture elements (32, 33). The active matrix panel further comprises a gate line drive circuit (21) and a source line drive circuit (12). Each of the picture elements includes a thin film transistor (29, 101) and, in addition, at least one of the gate line drive circuit and the source line drive circuit comprises a plurality of thin film transistors (47 to 56; 58, 59; 99, 100) provided on the transparent substrate. For example, the at least one of the gate line drive circuit and the source line drive circuit may comprise complementary thin film transistors. The thin film transistors of the picture element matrix have a similar cross sectional structure to at least certain of the thin film transistors of the at least one of the gate line drive circuit and the source line drive circuit.
Inventors
- 👤 Toshiyuki Misawa
- 👤 Hiroyuki Oshima
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 23:55
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/1333; G02F1/1345; G02F1/13454; H; H10; H10D; H10D84/00; H10D84/80; H10D84/82; H10D84/83; H10D84/85; H10D84/859; G09; G09G; G09G3/00; G09G3/001; G09G3/002; G09G3/003; G09G3/20; G09G3/34; G09G3/36; G09G3/3611; G09G3/3648; G09G3/3674; G09G3/3677; G09G3/3685; G09G3/3688; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/0191; H10D86/00; H10D86/40; H10D86/441; H10D86/60; H10W; H10W20/00; H10W20/40; G02F1/133345; G02F1/136; G02F1/1362; G02F1/136213; G02F1/136254; G09G2300/00; G09G2300/04; G09G2300/0404; G09G2300/0408; G09G2300/08; G09G2300/0809; G09G2330/00; G09G2330/12; G09G3/006; G09G3/2007; G09G3/2011; G09G3/3659; H10D30/00; H10D30/60; H10D30/67; H10D30/6704; H10D30/6713; H10W72/00; H10W72/01; H10W72/015; H10W72/01515; H10W72/071; H10W72/075; Y; Y10; Y10S; Y10S257/00; Y10S257/923; Y10S345/00; Y10S345/904
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
115 words
An active matrix panel comprising a picture element matrix (22), which is mounted on a transparent substrate (71, 86) and which includes a plurality of gate lines (24, 25), a plurality of source lines (26, 27, 28) and a plurality of picture elements (32, 33), each of the picture elements including a thin film transistor (29, 101), the active matrix panel further comprising a gate line drive circuit (21) and a source line drive circuit (12) and being characterised in that at least one of the gate line drive circuit and the source line drive circuit comprises a plurality of thin film transistors (47 to 56; 58, 59; 99, 100) provided on the transparent substrate.
Claim 2
Dependent Claim
115 words
An active matrix panel comprising a picture element matrix (22), which is mounted on a transparent substrate (71, 86) and which includes a plurality of gate lines (24, 25), a plurality of source lines (26, 27, 28) and a plurality of picture elements (32, 33), each of the picture elements including a thin film transistor (29, 101), the active matrix panel further comprising a gate line drive circuit (21) and a source line drive circuit (12) and being characterised in that at least one of the gate line drive circuit and the source line drive circuit comprises a plurality of thin film transistors (47 to 56; 58, 59; 99, 100) provided on the transparent substrate.
Claim 3
Dependent Claim
51 words
An active matrix panel according to claim 1 characterised in that the thin film transistors of the picture element have a similar cross sectional structure to at least certain of the thin film transistors of the at least one of the gate line drive circuit and the source line drive circuit.
Claim 4
Dependent Claim
54 words
An active matrix panel according to claim 1 or 2 characterised in that the thin film transistors of the picture element matrix are formed from the same layers as at least certain of the thin film transistors of the at least one of the gate line drive circuit and the source line drive circuit.
Claim 5
Dependent Claim
33 words
An active matrix panel according to any preceding claim characterised in that the at least one of the gate line drive circuit and the source line drive circuit comprises complementary thin film transistors.
Claim 6
Dependent Claim
39 words
An active matrix panel according to claim 4 characterised in that the at least one of the gate line drive circuit and the source line drive circuit comprises a static shift register composed of the complementary thin film transistors.
Claim 7
Dependent Claim
84 words
An active matrix panel according to claim 4 or 5 characterised in that the complementary thin film transistors comprise a P type thin film transistor including acceptor impurities in the source region and the drain region thereof and an N type thin film transistor including acceptor impurities and donor impurities in the source region and the drain region thereof, the donor impurities in the N type thin film transistor having a higher concentration than the acceptor impurities in the N type thin film transistor.
Claim 8
Dependent Claim
84 words
An active matrix panel according to claim 4 or 5 characterised in that the complementary thin film transistors comprise an N type thin film transistor including donor impurities in the source region and the drain region thereof and a P type thin film transistor including donor impurities and acceptor impurities in the source region and the drain region thereof, the acceptor impurities in the P type thin film transistor having a higher concentration than the donor impurities in the P type thin film transistor.
Claim 9
Dependent Claim
54 words
An active matrix panel according to any preceding claim characterised in that the gate length of the thin film transistors of the at least one of the gate line drive circuit and the source line drive circuit is formed to be shorter than that of the thin film transistors of the picture element matrix.
References Cited (Backward Citations)
No citation records indexed.
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