Patent US3545172A successfully refreshed from Google Patents.
Patent EP0342796A2 successfully refreshed from Google Patents.
EP0342796A2
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Thin-film transistor
Assignee: Toshiba Corp
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Filing: 1989-04-19
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Granted: —
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Expires: 2009-04-19
Abstract
Abstract A thin-film transistor comprising a substrate (1), a gate electrode (2) formed on said substrate (1), gate insulation film (3, 4, 5) formed on said gate electrode (2), semiconductor film (6) formed on said gate insulation film (3, 4, 5) and source and a drain electrode (9₁, 9₂), both formed on said semicnductor film (6). This thin-film transistor is characterized in that said gate electrode (2) is made of Mo-Ta alloy containing 60 to 85 atomic % of Ta, and said gate insulation film is made of a laminated layer including silicon nitride film (5) and oxide film (3) formed by oxidizing the surface of said gate electrode (2).
Inventors
- 👤 Masayuki C/O Intellectual Property Division Dohjo
- 👤 Yasuhisa C/O Intellectual Property Division Oana
- 👤 Mitsushi C/O Intellectual Property Division Ikeda
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-04 01:17
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/66; H10D64/68; H10D64/681; H10D64/685; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0316; H10D30/0321; H10D30/60; H10D30/67; H10D30/6729; H10D30/673; H10D30/6731; H10D30/6737; H10D30/6739; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6746; H10D64/691; H10D64/693; H10P; H10P14/00; H10P14/60; H10P14/66; H10P14/662
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
89 words
A thin-film transistor comprising a substrate, a gate electrode formed in said substrate, gate insulation film formed on said gate electrode, semiconductor film formed on said gate insulation film, and a source electrode and a drain electrode, both formed on said semiconductor film, characterized in that said gate electrode is made of molybdenum-tantalum alloy containing 60 to 85 atomic % of tantalum, and said gate insulation film is made of a laminated layer including silicon nitride film and oxide film formed by oxidizing the surface of said gate electrode.
Claim 2
Dependent Claim
89 words
A thin-film transistor comprising a substrate, a gate electrode formed in said substrate, gate insulation film formed on said gate electrode, semiconductor film formed on said gate insulation film, and a source electrode and a drain electrode, both formed on said semiconductor film, characterized in that said gate electrode is made of molybdenum-tantalum alloy containing 60 to 85 atomic % of tantalum, and said gate insulation film is made of a laminated layer including silicon nitride film and oxide film formed by oxidizing the surface of said gate electrode.
Claim 3
Dependent Claim
22 words
The thin-film transistor according to claim 1, further comprising silicon oxide film interposed between said oxide film and said silicon nitride film.
Claim 4
Dependent Claim
28 words
The thin-film transistor according to claim 2, further comprising passivation film convering the portions of said semiconductor film other than those portions contacting said source and drain electrodes.
Claim 5
Dependent Claim
26 words
The thin-film trnasistor according to any one of claims 1 to 3, characterized in that said gate electrode has a thickness of at least 500 Å.
Claim 6
Dependent Claim
22 words
The thin-film transistor according to any one of claims 1 to 4, characterized in that said semiconductor film is made of a-Si.
Claim 7
Dependent Claim
23 words
The thin-film transistor according to any one of claims 1 to 5, characterized in that said oxide film is an anodically oxidized film.
References Cited (Backward Citations)
No citation records indexed.
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