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EP0342038A2
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Josephson device
Assignee: Canon Inc
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Filing: 1989-05-11
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Granted: —
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Expires: 2009-05-11
Abstract
Abstract A Josephson device comprises a substrate, a lower superconductive layer, a tunneling layer and an upper superconductive layer which are laminated in this order, wherein the lower and upper superconductive layers each comprise a bismuth-copper-containing oxide superconductor and the tunneling layer comprises a bismuth-containing oxide. The bismuth-containing oxide is selected from an insulator compound, a normally conductive compound and a compound having a smaller critical current or a lower critical temperature that of the bismuth-copper-containing oxide superconductor. Both of the bismuth-copper-containing oxide superconductor and the bismuth-containing oxide have layer-lattice composite perovskite structures.
Inventors
- 👤 Atsuko Tanaka
- 👤 Keisuke Yamamoto
- 👤 Takehiko Kawasaki
- 👤 Norio Kaneko
- 👤 Kiyozumi Niizuma
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-04 10:58
CPC Classifications
H; H10; H10N; H10N60/00; H10N60/10; H10N60/12; H10N60/124
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
45 words
A Josephson device, comprising a substrate a lower superconductive layer, a tunneling layer and an upper superconductive layer which are laminated in this order, wherein said lower and upper superconductive layers each comprise a bismuth-copper-containing oxide superconductor and said tunneling layer comprises a bismuth-containing oxide.
Claim 2
Dependent Claim
45 words
A Josephson device, comprising a substrate a lower superconductive layer, a tunneling layer and an upper superconductive layer which are laminated in this order, wherein said lower and upper superconductive layers each comprise a bismuth-copper-containing oxide superconductor and said tunneling layer comprises a bismuth-containing oxide.
Claim 3
Dependent Claim
50 words
The Josephson device according to Claim 1, wherein said bismuth-containing oxide is selected from an insulator compound, a normally conductive compound, a compound having a smaller critical current than that of said bismuth-copper-containing oxide superconductor and a compound having a lower critical temperature than that of said bismuth-copper-containing oxide superconductor.
Claim 4
Dependent Claim
21 words
The Josephson device according to Claim 1, wherein both said bismuth-copper-containing oxide superconductor and bismuth-containing oxide have layer-lattice composite perovskite structures.
Claim 5
Dependent Claim
25 words
The Josephson device according to Claim 1, wherein said bismuth-copper-containing oxide superconductor comprises a superconductor constituted of elements comprising Bi, Sr, Ca, Cu and O.
Claim 6
Dependent Claim
26 words
The Josephson device according to Claim 1, wherein said lower and upper superconductive layers each have a layer thickness of from 2,000 Å to 5000 Å.
Claim 7
Dependent Claim
22 words
The Josephson device accoridng to Claim 1, wherein said tunneling layer has a layer thickness of from 10 Å to 500 Å.
Claim 8
Dependent Claim
226 words
A Josephson device, comprising a substrate, a lower superconductive layer, a tunneling layer and an upper superconductive layer which are laminated in this order, wherein said lower and upper superconductive layers each comprise a bismuth-copper-containing oxide superconductor represented by the formula: {(Bi 1-b C b )₂O₂}(Cu 1-a B a ) 2+n A 3+n O (12+3n)-x wherein A represents at least one element selected from the elemental group consisting of Group Ia, IIa, IIIa and IVb elements of the periodic table; B represents at least one element selected from the elemental group consisting of Group Ib, IVa, Va, VIa and VIIIa elements; C represents at least one element selected from rare earth elements; and O ≦ b < 1, O ≦ a < 1, -1 < n ≦ 10, and x > 0; and said tunneling layer comprises a bismuth-containing oxide represented by the formula: {(Bi 1-b C b )₂O₂}²⁺(Bi 1-a B a ₂(Ti 1-a A a )₃O₁₀} n ²⁻ wherein C represents at least one element selected from rare earth elements; B represents at least one element selected from the group consisting of Ca, Na, K, Ba, Sr, Pb and Pr; A represents at least one element selected from the group consisting of Nb, Ta, Fe, Sn and Ga; and O ≦ b < 1, O ≦ a < 1, and 1 ≦ n ≦ 5.
Claim 9
Dependent Claim
226 words
A Josephson device, comprising a substrate, a lower superconductive layer, a tunneling layer and an upper superconductive layer which are laminated in this order, wherein said lower and upper superconductive layers each comprise a bismuth-copper-containing oxide superconductor represented by the formula: {(Bi 1-b C b )₂O₂}(Cu 1-a B a ) 2+n A 3+n O (12+3n)-x wherein A represents at least one element selected from the elemental group consisting of Group Ia, IIa, IIIa and IVb elements of the periodic table; B represents at least one element selected from the elemental group consisting of Group Ib, IVa, Va, VIa and VIIIa elements; C represents at least one element selected from rare earth elements; and O ≦ b < 1, O ≦ a < 1, -1 < n ≦ 10, and x > 0; and said tunneling layer comprises a bismuth-containing oxide represented by the formula: {(Bi 1-b C b )₂O₂}²⁺(Bi 1-a B a ₂(Ti 1-a A a )₃O₁₀} n ²⁻ wherein C represents at least one element selected from rare earth elements; B represents at least one element selected from the group consisting of Ca, Na, K, Ba, Sr, Pb and Pr; A represents at least one element selected from the group consisting of Nb, Ta, Fe, Sn and Ga; and O ≦ b < 1, O ≦ a < 1, and 1 ≦ n ≦ 5.
Claim 10
Dependent Claim
21 words
The Josephson device according to Claim 7, wherein both said bismuth-copper-containing oxide superconductor and bismuth-containing oxide have layer-lattice composite perovskite structures.
Claim 11
Dependent Claim
30 words
The Josephson device according to Claim 7, wherein said bismuth-copper-containing oxide superconductor has a layer-lattice structure such that a perovskite-like layer is positioned between {(Bi 1-b C b )₂O₂}²⁺ layers.
Claim 12
Dependent Claim
26 words
The Josephson device according to Claim 7, wherein said lower and upper superconductive layers each have a layer thickness of from 2,000 Å to 5,000 Å
Claim 13
Dependent Claim
22 words
The Josephson device according to Claim 7, wherein said tunneling layer has a layer thickness of from 10 Å to 500 Å.
Claim 14
Dependent Claim
168 words
A Josephson device, comprising a substrate, a lower superconductive layer, a tunneling layer and an upper superconductive layer which are laminated in this order, wherein said lower and upper superconductive layers each comprise a bismuth-copper-containing oxide superconductor represented by the formula: {(Bi 1-b C b )₂O₂}(Cu 1-a B a ) 2+n A 3+n O (12+3n)-x wherein A represents at least one element selected from the elemental group consisting of Group Ia, IIa, IIIa and IVb elements of the periodic table; B represents at least one element selected from the elemental group consisting of Group Ib, IVa, Va, VIa and VIIIa elements; C represents at least one element selected from rare earth elements; and O ≦ b < 1, O ≦ a < 1, -1 < n ≦ 10, and x > 0; and said tunneling layer comprises a bismuth-containing oxide represented by the formula: Bi₂Sr₂LnCu₂O y wherein Ln represents at least one element selected from the group consisting of Y and lanthanides; and 7 ≦ y ≦ 9.
Claim 15
Dependent Claim
168 words
A Josephson device, comprising a substrate, a lower superconductive layer, a tunneling layer and an upper superconductive layer which are laminated in this order, wherein said lower and upper superconductive layers each comprise a bismuth-copper-containing oxide superconductor represented by the formula: {(Bi 1-b C b )₂O₂}(Cu 1-a B a ) 2+n A 3+n O (12+3n)-x wherein A represents at least one element selected from the elemental group consisting of Group Ia, IIa, IIIa and IVb elements of the periodic table; B represents at least one element selected from the elemental group consisting of Group Ib, IVa, Va, VIa and VIIIa elements; C represents at least one element selected from rare earth elements; and O ≦ b < 1, O ≦ a < 1, -1 < n ≦ 10, and x > 0; and said tunneling layer comprises a bismuth-containing oxide represented by the formula: Bi₂Sr₂LnCu₂O y wherein Ln represents at least one element selected from the group consisting of Y and lanthanides; and 7 ≦ y ≦ 9.
Claim 16
Dependent Claim
21 words
The Josephson device according to Claim 12, wherein both said bismuth-copper-containing oxide superconductor and bismuth-containing oxide have layer-lattice composite perovskite structures.
Claim 17
Dependent Claim
30 words
The Josephson device according to Claim 12, wherein said bismuth-copper-containing oxide superconductor has a layer-lattice structure such that a perovskite-like layer is positioned between {(Bi 1-b C b )₂O₂}²⁺ layers.
Claim 18
Dependent Claim
26 words
The Josephson device according to Claim 12, wherein said lower and upper superconductive layers each have a layer thickness of from 2,000 Å to 5,000 Å.
Claim 19
Dependent Claim
22 words
The Josephson device according to Claim 12, wherein said tunneling layer has a layer thickness of from 10 Å to 500 Å.
Claim 20
Dependent Claim
37 words
a Josephson device comprising a substrate having a first superconductive layer, a tunneling layer and a second superconductive layer, wherein the first, tunneling and second superconductive layers are formed of materials having similar mutually compatible crystal structures.
Claim 21
Dependent Claim
37 words
a Josephson device comprising a substrate having a first superconductive layer, a tunneling layer and a second superconductive layer, wherein the first, tunneling and second superconductive layers are formed of materials having similar mutually compatible crystal structures.
Claim 22
Dependent Claim
41 words
A device according to claim 17, wherein the first, tunneling and second superconductive layers are of metal oxide material in which the content of metals present and/or their relative proportions in the tunneling layer differs from that in the superconductive layers.
Claim 23
Dependent Claim
19 words
A device according to claim 17 or 18, wherein the tunneling layer is an insulator or a normal conductor.
Claim 24
Dependent Claim
31 words
A device according to claim 17 or 18, wherein the tunneling layer is a compound having a smaller critical current or a lower critical temperature than that of the superconductive layers.
References Cited (Backward Citations)
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