Patent EP0341964A2 successfully refreshed from Google Patents.
EP0341964A2
Expired / Lapsed
EP
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Silicon micro sensor and manufacturing method therefor
Assignee: Sharp Corp
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Filing: 1989-05-08
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Granted: —
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Expires: 2009-05-08
Abstract
Abstract A silicon micro sensor being comprised of a silicon substrate (2), a support element (6) formed over an etched portion of the silicon substrate and a sensor element (5) formed on the support element wherein the support element has a double layered structure being comprised of a silicon oxide film (3) formed on the silicon substrate using the thermal oxidization method and an aluminum oxide film (4) formed on the silicon oxide film using the sputtering method.
Inventors
- 👤 Hisatoshi Furubayashi
- 👤 Yasukiko Inami
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-07 08:07
CPC Classifications
G; G01; G01L; G01L1/00; G01L1/18; G01L9/00; G01L9/0041; G01L9/0042
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
96 words
A silicon micro sensor in which a support film is formed on a silicon substrate, the silicon substrate is etched using the support film as a mask for etching and a sensor film is formed on the portion of the support film locating at the etched portion of the silicon substrate, being characterized in that: the support film has a double layered structure being comprised of a silicon oxide film formed on the silicon substrate using the thermal oxidization method and an aluminum oxide film formed stacked on the silicon oxide film using the sputtering method.
Claim 2
Dependent Claim
96 words
A silicon micro sensor in which a support film is formed on a silicon substrate, the silicon substrate is etched using the support film as a mask for etching and a sensor film is formed on the portion of the support film locating at the etched portion of the silicon substrate, being characterized in that: the support film has a double layered structure being comprised of a silicon oxide film formed on the silicon substrate using the thermal oxidization method and an aluminum oxide film formed stacked on the silicon oxide film using the sputtering method.
Claim 3
Dependent Claim
25 words
Silicon micro sensor according to claim 1, in which the thickness of the aluminum oxide film is thicker than that of the silicon oxide film.
Claim 4
Dependent Claim
34 words
Silicon micro sensor according to claim 2, in which the thickness of the silicon oxide film is about 100 Å and that of the aluminum oxide film is about 1000 Å to several µms.
Claim 5
Dependent Claim
96 words
A manufacturing method for a support film of a silicon micro sensor which supports a sensor element thereon comprising: a step for forming a silicon oxide film on a silicon substrate using the thermal oxidization method; a step for forming an aluminum oxide film on the silicon oxide film using the sputtering method; a step for forming a mask for etching by processing the aluminum oxide film and the silicon oxide film using the photolithography technique; and a step for etching the silicon substrate using the mask to form the support element for the sensor element.
Claim 6
Dependent Claim
96 words
A manufacturing method for a support film of a silicon micro sensor which supports a sensor element thereon comprising: a step for forming a silicon oxide film on a silicon substrate using the thermal oxidization method; a step for forming an aluminum oxide film on the silicon oxide film using the sputtering method; a step for forming a mask for etching by processing the aluminum oxide film and the silicon oxide film using the photolithography technique; and a step for etching the silicon substrate using the mask to form the support element for the sensor element.
Claim 7
Dependent Claim
37 words
Manufacturing method as claimed in claim 4 further comprising a step for thermally treating a support film being comprised of the silicon oxide film and the aluminum oxide film at a temperature of 500 to 800 °C.
Claim 8
Dependent Claim
23 words
Manufacturing method as claimed in claim 4 or 5, in which the aluminum oxide film is formed thicker than the silicon oxide film.
Claim 9
Dependent Claim
79 words
A microsensor comprising a silicon substrate 2, a support film (3, 4) diposed on a surface of the substrate with a portion (8) of said support extending over a recess (9) formed in said substrate and a sensor (5) supported on said portion (8) of said support film, wherein said support film comprises a silicon oxide layer (3) formed on the substrate by thermal oxidation and an aluminum oxide layer (4) formed on the silicon oxide layer by sputtering.
Claim 10
Dependent Claim
79 words
A microsensor comprising a silicon substrate 2, a support film (3, 4) diposed on a surface of the substrate with a portion (8) of said support extending over a recess (9) formed in said substrate and a sensor (5) supported on said portion (8) of said support film, wherein said support film comprises a silicon oxide layer (3) formed on the substrate by thermal oxidation and an aluminum oxide layer (4) formed on the silicon oxide layer by sputtering.
References Cited (Backward Citations)
No citation records indexed.
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