Patent EP0340727A2 successfully refreshed from Google Patents.
EP0340727A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor device having organic film as interlayer insulating film for multilayer wirings
Assignee: NEC Corp
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Filing: 1989-05-02
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Granted: —
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Expires: 2009-05-02
Abstract
Abstract A semiconductor device which includes a semiconductor substrate (41), an element region formed on one of the principal surfaces of the semiconductor substrate with multilayer wiring structure (47,48,49) having an organic film (44,45,46) as an interlayer insulating film, a plurality of electrically conductive pillars formed in the periphery of the element region on the principal surface of the substrate, an organic interlayer insulating film formed between the plurality of electrically conductive pillars,and bonding pads formed on the plurality of electrically conductive pillars and extending from the upper layer wiring of the element region.
Inventors
- 👤 Tsutomu C/O Nec Corporation Tashiro
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 17:19
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/45; H10W20/47; H10W20/41; H10W20/42; H10W20/48; H10W72/00; H10W72/90; H10W72/931; H10W72/934; H10W72/951; H10W72/952
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
174 words
A semiconductor device comprising: a semiconductor substrate; an element region provided on one principal surface of said semiconductor substrate in which a plurality of semiconductor elements are formed; a first wiring layer formed on said element region; a first organic interlayer insulating film formed on said first wiring layer and filled in the gaps between said first wiring layer; a second wiring layer formed on said first organic insulating film; a plurality of openings formed in said first organic interlayer insulating film for electrically connecting predetermined portions of said first wiring layer and predetermined portions of said second wiring layer in said element region; a plurality of electrically conductive pillars having a predetermined width and length, said pillars being formed with a predetermined intervals on surface portion of said semiconductor substrate, said surface portion being separated from said element region; a second organic interlayer insulating film formed between said electrically conductive pillars; and a bonding pad formed on and in contact with said plurality of electrically conductive pillars extending from said second wiring layer.
Claim 2
Dependent Claim
174 words
A semiconductor device comprising: a semiconductor substrate; an element region provided on one principal surface of said semiconductor substrate in which a plurality of semiconductor elements are formed; a first wiring layer formed on said element region; a first organic interlayer insulating film formed on said first wiring layer and filled in the gaps between said first wiring layer; a second wiring layer formed on said first organic insulating film; a plurality of openings formed in said first organic interlayer insulating film for electrically connecting predetermined portions of said first wiring layer and predetermined portions of said second wiring layer in said element region; a plurality of electrically conductive pillars having a predetermined width and length, said pillars being formed with a predetermined intervals on surface portion of said semiconductor substrate, said surface portion being separated from said element region; a second organic interlayer insulating film formed between said electrically conductive pillars; and a bonding pad formed on and in contact with said plurality of electrically conductive pillars extending from said second wiring layer.
Claim 3
Dependent Claim
35 words
A semiconductor device as claimed in claim 1, further comprising a silicon nitride film or a silicon oxynitride film provided on the surface of said first wiring layer and said plurality of electrically conductive pillars.
Claim 4
Dependent Claim
31 words
A semiconductor device as claimed in claim 2, wherein said silicon nitride film or said silicon oxynitride film is removed from the upper surface of the plurality of electrically conductive pillars.
Claim 5
Dependent Claim
21 words
A semiconductor device as claimed in claim 1, wherein said bonding pad is a bonding pad for supplying a power source.
Claim 6
Dependent Claim
21 words
A semiconductor device as claimed in claim 2, wherein said bonding pad is a bonding pad for supplying a power source.
Claim 7
Dependent Claim
28 words
A semiconductor device as claimed in claim 4, wherein said plurality of electrically conductive pillars are not connected to said first wiring layer within said first wiring layer.
Claim 8
Dependent Claim
23 words
A semiconductor device as claimed in claim 6, wherein the planar form of said plurality of electrically conductive pillars is rectangular or square.
Claim 9
Dependent Claim
36 words
A semiconductor device as claimed in claim 7, wherein the length of the short side of said rectangle or the length of the side of said square is in the range of 3 to 10 µm.
Claim 10
Dependent Claim
46 words
A semiconductor device as claimed in claim 8, wherein the ratio of the length of the short side of said rectangle or the length of the side of said square to the interval between said electrically conductive pillars is in the range of 2 to 20.
Claim 11
Dependent Claim
34 words
A semiconductor device as claimed in claim 4, further comprising another plurality of electrically conductive pillars and third organic interlayer insulating film provided between said plurality of electrically conductive pillars and said bonding pad.
Claim 12
Dependent Claim
30 words
A semiconductor device as claimed in claim 1, further comprising a silicon oxide film formed between said principal surface of said semiconductor substrate and said plurality of electrically conductive pillars.
Claim 13
Dependent Claim
32 words
A semiconductor device as claimed in claim 11, further comprising a silicon nitride film or a silicon oxynitride film formed between said silicon oxide film and said plurality of electrically conductive pillars.
Claim 14
Dependent Claim
24 words
A semiconductor device as claimed in claim 12, wherein said first wiring layer and said plurality of electrically conductive columns are made of aluminum.
References Cited (Backward Citations)
No citation records indexed.
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