EP0340445A1
Expired / Lapsed
EP
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Turn-off power semiconductor device
Assignee: ABB Asea Brown Boveri Ltd
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Filing: 1989-03-25
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Granted: —
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Expires: 2009-03-25
Abstract
Abstract In a turn-off power semiconductor device in which the turn-off capability is achieved by MCT single cells, turn-on is provided for by IGBT single cells which are connected in parallel to the MCT single cells. <??>This structure achieves an improved turn-on capability and increased flexibility in the design of the device. <IMAGE>
Inventors
- 👤 Friedhelm Dr. Bauer
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-04 23:44
CPC Classifications
H; H10; H10D; H10D12/00; H10D12/411; H10D12/441; H10D18/00; H10D18/241; H10D12/211; H10D12/212; H10D18/251; H10D18/40; H10D18/60; H10D18/65; H10D18/655
Claims Analysis
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References Cited (Backward Citations)
EP0118007A2
Cited
EP0219995A2
Cited
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