Patent EP0339871A2 successfully refreshed from Google Patents.
EP0339871A2
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EP
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Corrosion tolerant bonding pad and method of fabricating same
Assignee: Advanced Micro Devices Inc
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Filing: 1989-04-20
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Granted: —
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Expires: 2009-04-20
Abstract
Abstract A corrosion tolerant bonding pad for a semiconductor device includes an interconnect (12) formed on the substrate (10) of the semiconductor device, a passivating layer (16) provided on the interconnect, the passivating layer having an aperture for exposing an enlarged bonding region of the interconnect, a barrier layer (28) provided on the exposed enlarged bonding area of the interconnect (12) and on portions of the passivating layer (16) surrounding the bonding area, and a bonding layer (30) provided on the barrier layer (28). The barrier layer is a non-corrosive, conductive material, for example, a compound of titanium and tungsten (TiW -- known as ti-tungsten).
Inventors
- 👤 Owen W. Hatcher, Jr.
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-02 15:46
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/425; H10W70/00; H10W70/60; H10W72/00; H10W72/01; H10W72/019; H10W72/01951; H10W72/01955; H10W72/071; H10W72/075; H10W72/07531; H10W72/07532; H10W72/50; H10W72/531; H10W72/536; H10W72/551; H10W72/552; H10W72/5522; H10W72/5524; H10W72/59; H10W72/90; H10W72/921; H10W72/923; H10W72/951; H10W72/952; H10W72/981; H10W72/983
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
52 words
A corrosion tolerant bonding pad, comprising: a conductive interconnect; a passivating layer provided on said conductive interconnect, said passivating layer having an aperture which exposes a portion of said conductive interconnect; a conductive barrier layer provided on said conductive interconnect in said aperture; and a bonding layer provided on said barrier layer.
Claim 2
Dependent Claim
52 words
A corrosion tolerant bonding pad, comprising: a conductive interconnect; a passivating layer provided on said conductive interconnect, said passivating layer having an aperture which exposes a portion of said conductive interconnect; a conductive barrier layer provided on said conductive interconnect in said aperture; and a bonding layer provided on said barrier layer.
Claim 3
Dependent Claim
30 words
A corrosion tolerant bonding pad according to claim 1, wherein said barrier layer comprises a material selected from the group comprising titanium and tungsten and compounds of titanium and tungsten.
Claim 4
Dependent Claim
21 words
A corrosion tolerant bonding pad according to claim 1, wherein said barrier layer comprises a compound of titanium and tungsten (TiW).
Claim 5
Dependent Claim
15 words
A corrosion tolerant bonding pad according to claim 3, wherein said bonding layer comprises aluminum.
Claim 6
Dependent Claim
28 words
A corrosion tolerant bonding pad according to claim 4, wherein: said barrier layer has a thickness of 1000-2000Å; and said bonding layer has a thickness of approximately 1µm.
Claim 7
Dependent Claim
25 words
A corrosion tolerant bonding pad according to claim 1, wherein said barrier layer is provided on a portion of said passivating layer surrounding said aperture.
Claim 8
Dependent Claim
38 words
A corrosion tolerant bonding pad according to claim 1, wherein said barrier layer has an area, said bonding layer has an area, and the area of said bonding layer is less than the area of said barrier layer.
Claim 9
Dependent Claim
38 words
A corrosion tolerant bonding pad according to claim 4, wherein said barrier layer has an area, said bonding layer has an area, and the area of said bonding layer is less than the area of said barrier layer.
Claim 10
Dependent Claim
28 words
A corrosion tolerant bonding pad according to claim 7, wherein said barrier layer is provided on portions of said passivating layer surrounding said aperture in said passivating layer.
Claim 11
Independent Claim
71 words
A method of fabricating a corrosion tolerant bonding pad for an interconnect formed on a substrate, comprising the steps of: (a) providing a passivating layer on the interconnect; (b) exposing a portion of the interconnect through an opening in the passivating layer; (c) providing a barrier layer on the portion of the interconnect corresponding to the opening in the passivating layer; and (d) providing a bonding layer on the barrier layer.
Claim 12
Independent Claim
71 words
A method of fabricating a corrosion tolerant bonding pad for an interconnect formed on a substrate, comprising the steps of: (a) providing a passivating layer on the interconnect; (b) exposing a portion of the interconnect through an opening in the passivating layer; (c) providing a barrier layer on the portion of the interconnect corresponding to the opening in the passivating layer; and (d) providing a bonding layer on the barrier layer.
Claim 13
Dependent Claim
29 words
A method according to claim 10, wherein said step (c) further comprises providing the barrier layer on portions of the passivating layer surrounding the opening in the passivating layer.
Claim 14
Dependent Claim
18 words
A method according to claim 11, wherein said step (c) comprises providing a titanium and tungsten barrier layer.
Claim 15
Dependent Claim
16 words
A method according to claim 12, wherein said step (d) comprises providing an aluminum bonding layer.
Claim 16
Dependent Claim
23 words
A method according to claim 13, wherein said step (d) comprises providing a 90%-100% pure aluminum bonding layer having a thickness of 1µm.
Claim 17
Dependent Claim
29 words
A method according to claim 13, wherein said step (d) further comprises providing a bonding layer having an area which is less than the area of the barrier layer.
Claim 18
Dependent Claim
70 words
A corrosion tolerant bonding pad for a semiconductor device, comprising: an interconnect for carrying an electrical signal; a passivating layer provided on a first portion of said interconnect; a barrier layer provided on a second portion of said interconnect and on a portion of said passivating layer in regions where said first and second portions of said interconnect are contiguous; and a bonding pad provided on said corrosion tolerant layer.
Claim 19
Dependent Claim
70 words
A corrosion tolerant bonding pad for a semiconductor device, comprising: an interconnect for carrying an electrical signal; a passivating layer provided on a first portion of said interconnect; a barrier layer provided on a second portion of said interconnect and on a portion of said passivating layer in regions where said first and second portions of said interconnect are contiguous; and a bonding pad provided on said corrosion tolerant layer.
Claim 20
Dependent Claim
27 words
A corrosion tolerant bonding pad according to claim 16, wherein: said interconnect comprises aluminum; said barrier layer comprises titanium and tungsten; and said bonding pad comprises aluminum.
Claim 21
Dependent Claim
17 words
A corrosion tolerant bonding pad according to claim 17 wherein said bonding pad comprises 90%-100% pure aluminum.
Claim 22
Dependent Claim
19 words
A corrosion tolerant bonding pad according to claim 18, wherein said bonding pad has a thickness of approximately 1µm.
Claim 23
Dependent Claim
38 words
A corrosion tolerant bonding pad according to claim 10, wherein said barrier layer has an area, said bonding layer has an area, and the area of said bonding layer is less than the area of said barrier layer.
Claim 24
Dependent Claim
38 words
A corrosion tolerant bonding pad according to claim 17, wherein said barrier layer has an area, said bonding layer has an area, and the area of said bonding layer is less than the area of said barrier layer.
Claim 25
Dependent Claim
90 words
A semiconductor device formed on a substrate, comprising: at least one active region provided in said substrate; an interconnect for providing an electrical interconnection with said active region, said interconnect having an enlarged bonding area; a passivation layer provided on said interconnect, said passivating layer having an aperture exposing said bonding area of said interconnect; a tungsten-titanium barrier layer provided on said bonding area of said interconnect in said aperture and on a portion of said passivating layer surrounding said aperture; and a bonding layer provided on said barrier layer.
Claim 26
Dependent Claim
90 words
A semiconductor device formed on a substrate, comprising: at least one active region provided in said substrate; an interconnect for providing an electrical interconnection with said active region, said interconnect having an enlarged bonding area; a passivation layer provided on said interconnect, said passivating layer having an aperture exposing said bonding area of said interconnect; a tungsten-titanium barrier layer provided on said bonding area of said interconnect in said aperture and on a portion of said passivating layer surrounding said aperture; and a bonding layer provided on said barrier layer.
Claim 27
Dependent Claim
23 words
A semiconductor device according to claim 30, wherein: said interconnect comprises aluminum; said barrier layer comprises titanium-tungsten; and said bonding layer comprises aluminum.
Claim 28
Dependent Claim
36 words
A semiconductor device according to claim 23, wherein said barrier layer has an area, said bonding layer has an area, and the area of said bonding layer is less than the area of said barrier layer.
References Cited (Backward Citations)
No citation records indexed.
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