Patent EP0338822A2 successfully refreshed from Google Patents.
EP0338822A2
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A liquid crystal active-matrix display device
Assignee: Sharp Corp
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Filing: 1989-04-20
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Granted: —
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Expires: 2009-04-20
Abstract
Abstract A liquid crystal active-matrix display device is provided wherein the edge portion of each of the gate electrodes (3) overlaps the edge portion of each of the picture element electrodes (10) to form an additional capacitor, the gate electrodes (3) being made of tantalum, and a first insulating film (4) of tantalum pentoxide and a second insulating film of silicon nitride (5) are disposed in a gap between each of the gate electrodes (3) and each of the picture element electrodes (10), thereby providing additional capacitors with a large capacity at a high yield with little affect on other processes.
Inventors
- 👤 Hiroshi Hamada
- 👤 Tadanori Hishida
- 👤 Ikuo Sakono
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 19:40
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; G02F1/136213
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
155 words
A liquid crystal active-matrix display device comprising thin film transistors that switch picture elements and picture element electrodes (10) that are arranged into a matrix, said picture element electrodes (10) being connected to said thin film transistors and said thin film transistors being disposed at intersecting points that are formed by gate electrodes (3) and source electrodes that are perpendicular to each other and being disposed on said gate electrodes (3) and having drain electrodes (9) connected to said picture element electrodes (10), characterised in that the edge portion of each of said gate electrodes (3) overlaps the edge portion of each of said picture element electrodes (10) to form an additional capacitor, said gate electrodes being made of tantalum, and a first insulating film (4) of tantalum pentoxide and a second insulating film (5) of silicon nitride are disposed between each of said gate electrodes (3) and each of said picture element electrodes (10).
Claim 2
Dependent Claim
155 words
A liquid crystal active-matrix display device comprising thin film transistors that switch picture elements and picture element electrodes (10) that are arranged into a matrix, said picture element electrodes (10) being connected to said thin film transistors and said thin film transistors being disposed at intersecting points that are formed by gate electrodes (3) and source electrodes that are perpendicular to each other and being disposed on said gate electrodes (3) and having drain electrodes (9) connected to said picture element electrodes (10), characterised in that the edge portion of each of said gate electrodes (3) overlaps the edge portion of each of said picture element electrodes (10) to form an additional capacitor, said gate electrodes being made of tantalum, and a first insulating film (4) of tantalum pentoxide and a second insulating film (5) of silicon nitride are disposed between each of said gate electrodes (3) and each of said picture element electrodes (10).
Claim 3
Dependent Claim
48 words
A liquid crystal active-matrix display device according to claim 1, wherein each of said gate electrodes (3) includes a gate line that extends from each of said gate electrodes in such a manner that it is positioned to overlap the periphery of the corresponding picture element electrode (10).
Claim 4
Dependent Claim
22 words
A liquid crystal active-matrix display device according to claim 1 or claim 2, wherein the gate electrodes (3) function as additional-capacitor electrodes.
Claim 5
Dependent Claim
33 words
A liquid crystal active-matrix display device according to any of claims 1 to 3, wherein said first insulating film (4) is formed by oxidizing the surface of each of said gate electrodes (3).
Claim 6
Dependent Claim
27 words
A liquid crystal active-matrix display device according to any of claims 1 to 4, wherein said second insulating film (5) is formed by plasma chemical vapour deposition.
References Cited (Backward Citations)
No citation records indexed.
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