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EP0337911A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

CMOS to GPI general purpose interface interface circuit

Assignee: International Business Machines Corp
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Filing: 1989-03-28
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Granted: —
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Expires: 2009-03-28
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Abstract

Abstract A high speed, high performance CMOS to GPI interface circuit is disclosed. The interface circuit contains an input stage (21), clamping circuitry (22), an output stage (23) and feed­back circuitry (26). The clamping circuitry (22) clamps the voltage level presented to the output stage (23) at a level below the power supply voltage when the input from the CMOS circuit is at a high logic level. As the voltage level of the signal presented to the GPI circuitry rises, feedback circuitry (26) feeds this signal back to the clamping circuit­ry, which in turn decreases the voltage level presented to the output stage. This assures the signal presented to the GPI circuit falls within the speci-fied voltage level from 1.51 and 2.2 volts. The feedback circuitry (26) contains a single pole filter that filters out high frequency reflections presented to the feedback circuitry (26), and a slew rate limiter that slows the rise and fall of the voltage level presented to the output stage (23) thereby reducing noise on the power supply and ground lines. The feedback circuitry (26) uses bilateral (push-pull) gain tech­niques to control the voltage level presented to the output stage (23) as the input signal from the CMOS circuit swings from low to high logic levels. The interface circuit is made up exclusively from standard threshold FETs. The interface circuit also contains discharge circuitry (24) that discharges the voltage level of the feed­back circuitry (26) when the input from the CMOS circuit chang­es from a high level to a low level, thereby preventing a latch-up condition.

Inventors

  • 👤 Delbert Raymond Cecchi
  • 👤 Hyung Sun Kim
  • 👤 John Steven Mitby
  • 👤 David Peter Swart
  • 👤 Balsha Robert Stanisic
  • 👤 Philip Tung Wu

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-02 16:08
CPC Classifications
H; H03; H03K; H03K19/00; H03K19/0175; H03K19/0185; H03K19/018507; H03K19/018521; H03K19/003; H03K19/00346; H03K19/00361

Claims Analysis

Total Claims: 9
Claim 1
Independent Claim 165 words
A CMOS to GPI interface circuit having an input stage connected to a CMOS circuit and an output stage con­nected to a GPI circuit, said interface circuit com­prising: clamping means, connected between said input stage and said output stage, for clamping the voltage level appearing at a first node between said output stage and said clamping means below the voltage level of said single power supply when the voltage level from said CMOS circuit is high; feedback means, connected to said output stage, said clamping means and said GPI circuit, for bilaterally adjusting the voltage level of said first node as a function of the voltage level of the signal presented to said GPI circuit, said feedback means further comprising: single pole filtering means for filtering out high frequency reflections; and slew rate limiting means for slowing the rise and fall of the voltage level at said first node, said rise and fall responsive to respective high and low voltage levels of said CMOS circuit.
Claim 2
Dependent Claim 165 words
A CMOS to GPI interface circuit having an input stage connected to a CMOS circuit and an output stage con­nected to a GPI circuit, said interface circuit com­prising: clamping means, connected between said input stage and said output stage, for clamping the voltage level appearing at a first node between said output stage and said clamping means below the voltage level of said single power supply when the voltage level from said CMOS circuit is high; feedback means, connected to said output stage, said clamping means and said GPI circuit, for bilaterally adjusting the voltage level of said first node as a function of the voltage level of the signal presented to said GPI circuit, said feedback means further comprising: single pole filtering means for filtering out high frequency reflections; and slew rate limiting means for slowing the rise and fall of the voltage level at said first node, said rise and fall responsive to respective high and low voltage levels of said CMOS circuit.
Claim 3
Dependent Claim 46 words
The interface circuit of claim 1, further compris­ing: discharge means, connected to said feedback means, said input stage and said clamping means, for dis­charging the voltage level of said feedback means when said CMOS circuit changes from a high voltage level to a low voltage level.
Claim 4
Dependent Claim 53 words
The interface circuit of claim 2, wherein said clamp­ing means further comprises: a first FET connected to said output stage and said first node; a second FET connected to said input stage and said single power supply; and a third FET connected to said first FET, said second FET, and said first node.
Claim 5
Dependent Claim 43 words
The interface circuit of claim 3, wherein said feed­back means further comprises: said second FET; said third FET; and a fourth FET connected to said output stage, said GPI circuit, said first node, said first FET, said second FET and said third FET.
Claim 6
Dependent Claim 30 words
The interface circuit of claim 4, wherein said dis­charge means further comprises: a fifth FET connected to said input stage, said second FET, said third FET, and said fourth FET.
Claim 7
Dependent Claim 20 words
The interface circuit of claim 5, wherein said clamp­ing means further comprises: a sixth FET connected to said first FET.
Claim 8
Dependent Claim 31 words
The interface circuit of claim 6, wherein said first FET, said second FET, said third FET, said fourth FET, said fifth FET and said sixth FET are all stan­dard threshold FETs.
Claim 9
Dependent Claim 19 words
The interface circuit of claim 7, wherein said inter­face circuit has a maximum propagation delay of approximately 25 nanoseconds.

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