Patent EP0336830A1 successfully refreshed from Google Patents.
EP0336830A1
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EP
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Method for producing an alternance of monocrystalline semiconductor layers and insulating layers
Assignee: Thales SA
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Filing: 1989-04-04
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Granted: —
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Expires: 2009-04-04
Abstract
Abstract Method for producing a layer of a monocrystalline semiconductor material on a layer of an insulating material (20, 21). To do this, an epitaxial growth is effected in a cavity (30) closed by layers of dielectric material (20, 40, 41), starting from seeds (38, 39) of monocrystalline semiconductor material (38, 39) of a substrate. <??>This method thus permits three-dimensional integration of semiconductor components. <IMAGE>
Inventors
- 👤 Didier Pribat
- 👤 Leonidas Karapiperis
- 👤 Christian Collet
- 👤 Guy Garry
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 18:38
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1912; H10P14/00; H10P14/20; H10P14/24; H10P14/27; H10P14/271; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; H10P14/3421; H10P14/3422; H10W; H10W10/00; H10W10/10; H10W10/181; Y; Y10; Y10S; Y10S148/00; Y10S148/164
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References Cited (Backward Citations)
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