Patent EP0332561A2 successfully refreshed from Google Patents.
EP0332561A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Low Dielectric composite substrate
Assignee: International Business Machines Corp
•
Filing: 1989-02-28
•
Granted: —
•
Expires: 2009-02-28
Abstract
Abstract The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addressed by backfilling the permeable cracks (33) with a flexible material (35). Uniform gaps between the metal (32) and dielectric materials (31) can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength.
Inventors
- 👤 Arnold Ivan Baise
- 👤 Jon Alfred Casey
- 👤 David Richard Clarke
- 👤 Renuka Shastri Divakaruni
- 👤 Werner Ernest Dunkel
- 👤 James Noel Humenik
- 👤 Steven Michael Kandetzke
- 👤 Daniel Patrick Kirby
- 👤 John Ulrich Knickerbocker
- 👤 Amy Trestman Matts
- 👤 Mark Anthony Takacs
- 👤 Lovell Berry Wiggins
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 07:06
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/01; H10W70/05; C; C04; C04B; C04B41/00; C04B41/45; C04B41/46; C04B41/48; C04B41/488; C04B41/49; C04B41/4905; C04B41/495; C04B41/4961; H05; H05K; H05K3/00; H05K3/40; H05K3/4038; H05K3/4053; H05K3/4061; H10W70/60; H10W70/611; H10W70/67; H10W70/68; H10W70/685; C04B2111/00; C04B2111/00474; C04B2111/00663; C04B2111/00672; C04B2111/00844; H05K1/00; H05K1/02; H05K1/03; H05K1/0306; H05K2201/00; H05K2201/09; H05K2201/09209; H05K2201/095; H05K2201/09581; H05K2203/00; H05K2203/11; H05K2203/1147; H05K2203/30; H05K2203/308
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
43 words
A multilayered ceramic substrate for mounting semiconductor devices comprising: a plurality of layers of sintered dielectric material; a plurality of patterns of metallurgical features disposed on said dielectric material layers, said features having permeable pores; and a polymeric material within said permeable pores.
Claim 2
Dependent Claim
43 words
A multilayered ceramic substrate for mounting semiconductor devices comprising: a plurality of layers of sintered dielectric material; a plurality of patterns of metallurgical features disposed on said dielectric material layers, said features having permeable pores; and a polymeric material within said permeable pores.
Claim 3
Dependent Claim
80 words
A substrate for interconnecting electronic components comprising; at least one layer of non-porous dielectric material; non-porous metallurgical features of a first metallurgy disposed in said dielectric material comprising metallurgical patterns disposed on the surfaces of said at least one layer and a plurality of metallurgical vias extending between said the surfaces of said at least one layer, and wherein a permeable collar is disposed between said via and said dielectric material; and a flexible material disposed in said permeable collar.
Claim 4
Dependent Claim
80 words
A substrate for interconnecting electronic components comprising; at least one layer of non-porous dielectric material; non-porous metallurgical features of a first metallurgy disposed in said dielectric material comprising metallurgical patterns disposed on the surfaces of said at least one layer and a plurality of metallurgical vias extending between said the surfaces of said at least one layer, and wherein a permeable collar is disposed between said via and said dielectric material; and a flexible material disposed in said permeable collar.
Claim 5
Dependent Claim
14 words
The structure of Claim 2 wherein said permeable collar comprises a uniform permeable void.
Claim 6
Dependent Claim
16 words
The structure of Claim 2, wherein said permeable collar comprises a second metallurgy having permeable pores.
Claim 7
Dependent Claim
26 words
The structure of Claim 4, wherein said first metallurgy comprises a pure metal and wherein said second metallurgy comprises said first metal and a sintering retardant.
Claim 8
Dependent Claim
26 words
The structure of Claim 2,3,4 or 5 wherein said flexible material is thermally stable to temperatures suffi cient to effect interconnection of components to said substrate.
Claim 9
Dependent Claim
21 words
The structure according to any one of Claims 2 to 6, wherein said dielectric material comprises at least a crystallizable glass.
Claim 10
Dependent Claim
16 words
The structure of Claim 7, wherein said crystallizable glass has cordierite as its principle crystalline phase.
Claim 11
Dependent Claim
36 words
The structure according to any one of Claims 2 to 8, wherein said first metallurgy comprises a metal-based metallurgy, said metal being selected from the group comprising copper, aluminum, silver, gold, platinum, palladium and alloys thereof.
Claim 12
Dependent Claim
25 words
The structure of Claim 5, wherein said first metallurgy comprises one of the group comprising copper, silver, gold, platinum, palladium and aluminum and alloys thereof.
Claim 13
Dependent Claim
40 words
A multilayered ceramic substrate for mounting semiconductor devices comprising: a continuous network of metallized dielectric material comprising a co-fired glass-ceramic material and sintering retardant therefor, said continuous network having permeable interstices; and a flexible material disposed in said permeable interstices.
Claim 14
Dependent Claim
40 words
A multilayered ceramic substrate for mounting semiconductor devices comprising: a continuous network of metallized dielectric material comprising a co-fired glass-ceramic material and sintering retardant therefor, said continuous network having permeable interstices; and a flexible material disposed in said permeable interstices.
Claim 15
Dependent Claim
25 words
The structure of Claim 11 wherein said sintering retardant is selected from the group consisting of silicon nitride, fused silica, mullite, alumina and precrystallized cordierite.
Claim 16
Dependent Claim
32 words
The structure of Claim 6 or 11 wherein said flexible material is a thermally stable polymeric material selected from the group consisting of polyimides, bismaleimides, acetylenes, epoxies, and thermally stable silicon-containing polymers.
Claim 17
Dependent Claim
55 words
A structure for interconnection vias in a multilayer substrate having a pattern of via holes thereon comprising: a conductive, non-porous first via material disposed in said holes and having a diameter which is less than the diameter of said holes; and a porous second via material disposed between the first via material and the substrate.
Claim 18
Dependent Claim
55 words
A structure for interconnection vias in a multilayer substrate having a pattern of via holes thereon comprising: a conductive, non-porous first via material disposed in said holes and having a diameter which is less than the diameter of said holes; and a porous second via material disposed between the first via material and the substrate.
Claim 19
Dependent Claim
19 words
The structure of Claim 14, further comprising a conductive polymeric material disposed in the pores of said second material.
Claim 20
Independent Claim
143 words
A method of providing an hermetic substrate for mounting semiconductor devices comprising the steps of: mixing a slurry comprising at least a dielectric material and a binder; casting said slurry into a plurality of greensheets; drying said sheets; forming a pattern of via holes in said greensheet; filling said via holes with a first via fill material comprising metallurgy and wherein said filling comprises providing via fill material to said holes at a diameter which is less than the diameter of said via hole thereby providing a permeable gap between said metallurgy and said dielectric material; stacking said greensheets in alignment with each other; laminating said stack; firing said stack to a temperature sufficient to sinter said dielectric material and said metallurgy but not sufficient to melt said metallurgy; and providing a flexible material to said gap between said metallurgy and said dielectric.
Claim 21
Independent Claim
143 words
A method of providing an hermetic substrate for mounting semiconductor devices comprising the steps of: mixing a slurry comprising at least a dielectric material and a binder; casting said slurry into a plurality of greensheets; drying said sheets; forming a pattern of via holes in said greensheet; filling said via holes with a first via fill material comprising metallurgy and wherein said filling comprises providing via fill material to said holes at a diameter which is less than the diameter of said via hole thereby providing a permeable gap between said metallurgy and said dielectric material; stacking said greensheets in alignment with each other; laminating said stack; firing said stack to a temperature sufficient to sinter said dielectric material and said metallurgy but not sufficient to melt said metallurgy; and providing a flexible material to said gap between said metallurgy and said dielectric.
Claim 22
Dependent Claim
35 words
The method of Claim 16 wherein said providing said flexible material comprises; preparing a solution of a polymer precursor and solvents; infusing said gaps in said substrate with said solution; and polymerizing said polymeric material.
Claim 23
Dependent Claim
22 words
The method of Claim 17, wherein said polymerizing step comprises heating said infused substrate to a temperature sufficient to polymerize said material.
Claim 24
Dependent Claim
23 words
The method of Claim 17, wherein said flexible material is a polyimide and wherein said polymerizing step comprises effecting imidization in said material.
Claim 25
Independent Claim
44 words
The method according to any one of Claims 16 to 19, wherein said providing of said flexible material comprises the steps of: infusing said gaps in said substrate with a solventless polymer material in its gaseous or liquid form; and solidifying said polymer material.
Claim 26
Independent Claim
63 words
The method according to any one of Claims 16 to 19, wherein said flexible material is a bismaleimide and wherein said providing of said elastic material comprises the steps of: heating said bismaleimide to a temperature sufficient to allow said bismaleimide to flow; flowing said bismaleimide into said gaps in said substrate; and cooling said bismaleimide-filled substrate to allow said bismaleimide to solidify.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.