Patent EP0331333A2 successfully refreshed from Google Patents.
EP0331333A2
Expired / Lapsed
EP
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Method of making an article comprising a tandem groove, and article produced by the method
Assignee: AT&T Inc
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Filing: 1989-02-22
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Granted: —
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Expires: 2009-02-22
Abstract
Abstract Tandem grooves (or other groove-like features) with controlled transition between the narrow and wide portion of the groove can be formed in a semiconductor surface, exemplary a (100) Si surface, by a method that comprises patterning a first masking layer such that the resulting aperture in the masking layer defines the tandem groove, re-covering the narrow part of the aperture with a second masking layer, subjecting the wide portion of the aperture to an initial etch, removing the second masking layer from the narrow part of the aperture, and subjecting the aperture to a further etch such that both the wide and the narrow portions of the tandem groove are completed. The inventive method is advantageously used to produce grooves that allow attachment of a coated optical fiber to a Si substrate.
Inventors
- 👤 Greg. E. Blonder
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-24 10:30
CPC Classifications
G; G02; G02B; G02B6/00; G02B6/24; G02B6/26; G02B6/30; G02B6/36; G02B6/3628; G02B6/3684; G02B6/3692; G02B6/38; G02B6/3801; G02B6/3803; G02B6/42; G02B6/4201; G02B6/4202; H; H10; H10P; H10P50/00; H10P50/60; H10P50/64; H10P50/642; H10P50/644; G02B6/3632; G02B6/3636; G02B6/3648; G02B6/3652; Y; Y10; Y10T; Y10T428/00; Y10T428/24; Y10T428/24479
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
208 words
A method of making an article comprising a semiconductor body (30) having a major surface with at least one groove-like longitudinal feature therein, the feature comprising a first and second part having a relatively large and a relatively small cross section, respectively, the method comprising a) forming a first masking layer (31) on the major surface, and patterning the first masking layer such that an opening (32) is formed therein, the opening comprising a wide and a narrow portion (33, 34) associated with the first and the second part of the groove-like feature, respectively; b) contacting the major surface region that is exposed in the opening in the first masking layer with an anisotropic etchant such that the groove-like feature is formed; CHARACTERIZED IN THAT the method further comprises c) covering, subsequent to a) and prior to b), the narrow portion of the opening with a second masking layer (35) while leaving essentially uncovered the wide portion of the opening; contacting the major surface region that is exposed in the wide portion of the opening with the anisotropic etchant and terminating the contact before formation of the first part of the groove-like feature is completed; and removing the second masking layer from the narrow portion of the opening.
Claim 2
Independent Claim
208 words
A method of making an article comprising a semiconductor body (30) having a major surface with at least one groove-like longitudinal feature therein, the feature comprising a first and second part having a relatively large and a relatively small cross section, respectively, the method comprising a) forming a first masking layer (31) on the major surface, and patterning the first masking layer such that an opening (32) is formed therein, the opening comprising a wide and a narrow portion (33, 34) associated with the first and the second part of the groove-like feature, respectively; b) contacting the major surface region that is exposed in the opening in the first masking layer with an anisotropic etchant such that the groove-like feature is formed; CHARACTERIZED IN THAT the method further comprises c) covering, subsequent to a) and prior to b), the narrow portion of the opening with a second masking layer (35) while leaving essentially uncovered the wide portion of the opening; contacting the major surface region that is exposed in the wide portion of the opening with the anisotropic etchant and terminating the contact before formation of the first part of the groove-like feature is completed; and removing the second masking layer from the narrow portion of the opening.
Claim 3
Dependent Claim
41 words
Method of claim 1, wherein the semiconductor body is a Si body, wherein the major surface is substantially parallel to a (001) crystallographic plane, and wherein the longitudinal axis of the groove-like feature is substantially parallel to a [110] crystallographic direction.
Claim 4
Dependent Claim
27 words
Method of any of claims 1 and 2, wherein the groove-like feature is a tandem V-groove adapted for receiving therein an end portion of an optical fiber.
Claim 5
Dependent Claim
68 words
Method of any of claims 1 and 2, wherein the groove-like feature further comprises a third part, the third part also having a relatively large cross section, the second part connecting the first and third parts, the groove-like feature being a tandem V-groove adapted for receiving therein in opposed position an end portion of each of two optical fibers such that the two optical fibers are optically coupled.
References Cited (Backward Citations)
No citation records indexed.
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