Patent EP0329569A2 successfully refreshed from Google Patents.
EP0329569A2
Expired / Lapsed
EP
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Semiconductor device with a thin insulating film
Assignee: Fujitsu Ltd
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Filing: 1989-02-17
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Granted: —
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Expires: 2009-02-17
Abstract
Abstract A semiconductor device comprises : a insulating film (26, 25) having first part (26) and a second part (25), the second part (25) being thinner than the first part (26); and a polycrystalline silicon film having a first part (23) arranged over the first part (26) of the insulating film and a second part (24) arranged over the second part (25) of the insulating film, the second part (24) of the polycrystalline silicon film having a lower concentration of impurities than that of the first part of polycrystalline silicon film.
Inventors
- 👤 Taiji Ema
- 👤 Kazunari Shirai
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 20:27
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10B12/30; H10B12/31; H10D64/00; H10D64/20; H10D64/27; H10D64/311; H10D64/411; H10D64/511; H10D64/60; H10D64/66; H10D64/661; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4451
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
82 words
A semiconductor device comprising: an insulating film having a first part and a second part, the second part being thinner than the first part; and a polycrystalline silicon (poly Si) film having a first part arranged over the first part of said insulating film and a second part arranged over the second part of said insulating film, the second part of said polycrystalline silicon film having a lower concentration of impurities than that of the first part of said polycrystalline silicon film.
Claim 2
Dependent Claim
82 words
A semiconductor device comprising: an insulating film having a first part and a second part, the second part being thinner than the first part; and a polycrystalline silicon (poly Si) film having a first part arranged over the first part of said insulating film and a second part arranged over the second part of said insulating film, the second part of said polycrystalline silicon film having a lower concentration of impurities than that of the first part of said polycrystalline silicon film.
Claim 3
Dependent Claim
74 words
A semiconductor device according to claim 1, wherein said device comprises a MIS transistor having a gate electrode (17) composed of the second part of said polycrystalline silicon film, a gate insulator (15) composed of the second part of said insulating film, a field insulator (12) composed the first part of said insulating film, and a wiring (171B₁, 17B₂) composed of the first part of said insulating film and connected to the gate electrode.
Claim 4
Dependent Claim
23 words
A semiconductor device according to claim 2, wherein the first and second parts of said insulating film are arranged in a single layer.
Claim 5
Dependent Claim
22 words
A semiconductor device according to claim 2, wherein the first and second parts of said insulating film are arranged in different layers.
Claim 6
Dependent Claim
24 words
a semiconductor device according to claim 1, wherein the second part of said insulating film is a minimum thickness part of said insulating film.
Claim 7
Dependent Claim
64 words
a semiconductor device according to claim 1, wherein said device comprises a dynamic type memory cell including a cell capacitor composed of a charge storage electrode (23) arranged underneath the second part of said insulating film, and capacitor dielectric film(25) composed of the second part of said insulating film, a capacitor plate electrode (24) composed of the second part of said polycrystalline silicon film.
Claim 8
Dependent Claim
42 words
A semiconductor device according to claim 1, wherein the concentration of impurities in the second part of said polycrystalline silicon is 10¹⁸/cm³ to 10²⁰/cm³, and the concentration of impurities in the first part of the polycrystalline silicon film is 10¹⁹/cm³ to 10²¹/cm³.
Claim 9
Dependent Claim
22 words
A semiconductor device according to claim 1, wherein a thickness of the second part of said insulating film is less than 100Å.
Claim 10
Dependent Claim
22 words
A semiconductor device according to claim 8, wherein a thickness of the first part of said insulating film is more than 1000Å.
Claim 11
Dependent Claim
22 words
A semiconductor device according to claim 7, wherein a thickness of the second part of said insulating film is less than 100Å.
Claim 12
Dependent Claim
22 words
A semiconductor device according to claim 10, wherein a thickness of the first part of said insulating film is more than 1000Å.
Claim 13
Dependent Claim
44 words
A semiconductor device according to claim 6, wherein the concentration of impurities in the second part (24) of said polycrystalline silicon film is 10¹⁸/cm³ to 10²⁰/cm³, and the concentration of impurities in the first part of the polycrystalline silicon film is 10¹⁹/cm³ to 10²¹/cm³.
Claim 14
Dependent Claim
23 words
A semiconductor device according to claim 6, wherein a thickness of the second part (25) of said insulating film is less than 100Å.
References Cited (Backward Citations)
No citation records indexed.
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