Patent EP0329103A2 successfully refreshed from Google Patents.
EP0329103A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Process for manufacturing thin film of high-Tc superconducting oxide
Assignee: Riken Corp
•
Filing: 1989-02-15
•
Granted: —
•
Expires: 2009-02-15
Abstract
Abstract A process for manufacturing a thin film of high-T c superconducting oxide by means of chemical vapor deposition technique using vaporizing sources for the elements constituting the superconducting oxide and a carrier gas with oxygen, which process comprises depositing a layer of an oxide composition on a substrate under a chemical deposition condition of a temperature below 1,000°C and a reduced pressure from vaporizing sources for the elements including at least barium, yttrium and copper and subjecting the so deposited layer to epitaxial crystal growth to form an oxide thin film having a chemical composition of Ba₂YCu₃O 7-y , wherein said vaporizing sources consist each of an organic complex compound, such as β-diketone complex.
Inventors
- 👤 Hideyuki C/O Kabushiki Kaisha Riken Kurosawa
- 👤 Toshio Hirai
- 👤 Hisanori Yamane
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 17:41
CPC Classifications
H; H10; H10N; H10N60/00; H10N60/01; H10N60/0268; H10N60/0296; H10N60/0436; H10N60/0464; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/408; C30; C30B; C30B25/00; C30B25/02; C30B29/00; C30B29/10; C30B29/16; C30B29/22; C30B29/225; H10N60/80; H10N60/85; H10N60/855; H10N60/857
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
80 words
A process for manufacturing a thin film of high-T c superconducting oxide by means of chemical vapor deposition technique using vaporizing sources for the metal elements constituting the superconducting oxide and a carrier gas with oxygen, comprising forming a ceramic thin film on a substrate by chemical vapor deposition at a temperature region below 1,000 °C from vaporizing sources for the elements including at least barium, yttrium and copper, wherein the vaporing sources consist each of an organic complex compound.
Claim 2
Dependent Claim
80 words
A process for manufacturing a thin film of high-T c superconducting oxide by means of chemical vapor deposition technique using vaporizing sources for the metal elements constituting the superconducting oxide and a carrier gas with oxygen, comprising forming a ceramic thin film on a substrate by chemical vapor deposition at a temperature region below 1,000 °C from vaporizing sources for the elements including at least barium, yttrium and copper, wherein the vaporing sources consist each of an organic complex compound.
Claim 3
Dependent Claim
24 words
A process according to Claim 1, wherein all the vaporizing sources for the metal elements constituting the superconducting oxide are present as β-diketone complex.
Claim 4
Dependent Claim
35 words
A process according to Claim 1, wherein the compositional ratio of the elements of superconducting oxide is adjusted by controlling the flow rate of the carrier gas and the heating temperature for each vaporizing source.
Claim 5
Dependent Claim
28 words
A process according to Claim 1, wherein a heat treatment of the oxide thin film formed on the substrate is effected successively in situ in the deposition chamber.
Claim 6
Dependent Claim
58 words
A process for manufacturing a thin film of high-T c superconducting oxide by means of chemical vapor deposition technique using vaporizing sources for the metal elements constituting the superconducting oxide and a carrier gas with oxygen, comprizing forming an oriented oxide thin film of a chemical composition of Ba₂YCu₃O 7-y on a substrate at atemperature above 800 °C.
Claim 7
Dependent Claim
58 words
A process for manufacturing a thin film of high-T c superconducting oxide by means of chemical vapor deposition technique using vaporizing sources for the metal elements constituting the superconducting oxide and a carrier gas with oxygen, comprizing forming an oriented oxide thin film of a chemical composition of Ba₂YCu₃O 7-y on a substrate at atemperature above 800 °C.
Claim 8
Dependent Claim
20 words
A process according to Claim 5, wherein the thin film formed has a crystal orientation in the direction of [0,0,1].
Claim 9
Dependent Claim
13 words
A process according to Claim 5, wherein the substrate consists of a polycrystal.
Claim 10
Dependent Claim
14 words
A process according to Claim 5, wherein the substrate consists of a single crystal.
Claim 11
Dependent Claim
46 words
A process according to Claims 5 and 8, wherein the thin film of chemical composition of Ba₂YCu₃O 7-y is formed on a substrate of single crystal under a chemical vapor deposition condition of a temperature below 1,000 °C and a reduced pressure with epitaxial crystal growth.
Claim 12
Dependent Claim
28 words
A process according to Claim 9, wherein the substrate consists of a single crystal of strontium titanate and is heated to a temperature of 800 - 950 °C.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.