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EP0328134A2
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Semiconductor laser device and method of manufacturing semiconductor laser device
Assignee: Toshiba Corp
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Filing: 1989-02-10
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Granted: —
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Expires: 2009-02-10
Abstract
Abstract A semiconductor laser device using double heterostructure comprised of In x Ga y Al 1 - x - y P (0 ≦ x ≦ 1, 0 ≦ y ≦ 1), capable of preventing the leakage of the carriers and thereby reducing the threshold current, being operative with small threshold current density and at high temperature, and having a long lifetime. The device may include a double heterostructure formed on the GaAs substrate (11),comprised of In x Ga y Al 1 - x - y P (0 ≦ x ≦ 1, 0 ≦ y ≦ 1) including an active layer (14), the active layer (14) having an impurity concentration not greater than 5 x 10¹⁶cm⁻³. The device may include a double heterostructure formed on the GaAs substrate (11), comprised of InGaP active layer (11) and p-type In q (Ga 1 - z Al z ) q P (0 ≦ q ≦ 1, 0 ≦ z ≦ 1) cladding layer (15)with a value of z between 0.65 and 0.75. The device may include a double heterostructure formed on the GaAs substrate (11), comprised of In x Ga y Al 1 - x - y P (0 ≦ x ≦ 1, 0 ≦ y ≦ 1) including an n-type cladding layer (13)and a p-type cladding layer (15), one of the n-type cladding layer (13)and the p-type cladding layer (15)being Si-doped. A method of manufacturing the device is also disclosed.
Inventors
- 👤 Yasuo Mcoopmaruyamadai 202 Ohba
- 👤 Yukie Nishikawa
- 👤 Hajime Hodogayagreentown K-403 Okuda
- 👤 Masayuki Purumienishimine 203 Ishikawa
- 👤 Hideto Sugawara
- 👤 Hideo Toshibashinkoyasuryo Shiozawa
- 👤 Yoshihiro Kokubun
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-06 18:16
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/30; H01S5/305; H01S5/32; H01S5/323; H01S5/32308; H01S5/32325; H10; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/013; H01S5/2054; H01S5/2059; H01S5/22; H01S5/2205; H01S5/2206; H01S5/223; H01S5/2231; H01S5/3054
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
61 words
A semiconductor laser device, comprising: a GaAs substrate (11); and a double heterostructure formed on the GaAs substrate(11), comprised of In x Ga y Al 1 - x - y P (0 ≦ x ≦ 1, 0 ≦ y ≦ 1) including an active layer(14), characterized in that the active layer has a carrier concentration not greater than 5 x 10¹⁶cm⁻³.
Claim 2
Dependent Claim
61 words
A semiconductor laser device, comprising: a GaAs substrate (11); and a double heterostructure formed on the GaAs substrate(11), comprised of In x Ga y Al 1 - x - y P (0 ≦ x ≦ 1, 0 ≦ y ≦ 1) including an active layer(14), characterized in that the active layer has a carrier concentration not greater than 5 x 10¹⁶cm⁻³.
Claim 3
Dependent Claim
41 words
The device of claim 1, wherein the double heterostructure further includes a Zn-doped p-type cladding layer(15), the Zn-doped p-type cladding layer(15) having a carrier concentration not greater than one half of a maximum value for the carrier concentration obtainable by Zn-doping.
Claim 4
Dependent Claim
174 words
The device of claim 1, wherein the double heterostructure comprises: an n-type In x Ga y Al 1 - x - y P (0 ≦ x ≦ 1, 0 ≦ y ≦ 1) cladding layer(13); an InGaP active layer(14) in contact with the n-type In x Ga y Al 1 - z - y (0 ≦ x ≦ 1, 0 ≦ y ≦ 1) cladding layer(13); a p-type In x Ga y Al 1 - x - y P (0 ≦ x ≦ 1, 0 ≦ y ≦ 1) cladding layer(15) in contact with the InGaP active layer(14); a p-type InGaP capping layer(16) in contact with the p-type In x Ga y Al 1 - x - y P (0 ≦ x ≦ 1, 0 ≦ y ≦ 1) cladding layer(15); an n-type GaAs block layer(17) in contact with the p-type InGaP capping layer(16); and a p-type GaAs contact layer(18) in contact with the n-type GaAs block layer(17) including a cuurent pinching section(30) which is also in contact with the p-type InGaP capping layer(16).
Claim 5
Dependent Claim
251 words
The device of claim 1, wherein the double heterostructure comprises: an n-type In x Ga y Al 1 - x - y P (0 ≦ x ≦ 1, 0 ≦ y ≦ 1) cladding layer (113); an InGaP active layer(114) in contact with the n-type In x Ga y Al 1 - x - y P (0 ≦ x ≦ 1, 0 ≦ y ≦ 1) cladding layer(113); a p-type In x Ga y Al 1 - x - y P (0 ≦ x ≦ 1, 0 ≦ y ≦ 1) cladding layer(115) in contact with the InGaP active layer(114); a p-type InGaP etching stop layer(116) in contact with the p-type In x Ga y Al 1 - x - y P(0 ≦ x ≦ 1, 0 ≦ y ≦ 1) cladding layer(115); an n-type GaAs current block layer(117) in contact with the p-type InGaP etching stop layer(116); a mesa shaped p-type In x Ga y Al 1 - x - y P (0 ≦ x ≦ 1, 0 ≦ y ≦ 1) cladding layer(125) in contact with the InGaP etching stop layer(116); a p-type InGaP intermediate band gap layer(126) in contact with the mesa shaped p-type In x Ga y Al 1 - x - y P (0 ≦ x ≦ 1, 0 ≦ y ≦ 1) cladding layer(125); and a p-type InGaP contact layer(118) in contact with the n-type GaAs current block layer(117) including a section which is also in contact with the p-type InGaP intermediate band gap layer(126).
Claim 6
Dependent Claim
59 words
A semiconductor laser device, comprising: a GaAs substrate(11); and a double heterostructure formed on the GaAs substrate(11), comprised of InGaP active layer(14) and p-type In q (Ga 1 - z Al z ) q P (0 ≦ q ≦ 1, 0 ≦ z ≦ 1) cladding layer(15), characterized in that a value of z is between 0.65 and 0.75.
Claim 7
Dependent Claim
59 words
A semiconductor laser device, comprising: a GaAs substrate(11); and a double heterostructure formed on the GaAs substrate(11), comprised of InGaP active layer(14) and p-type In q (Ga 1 - z Al z ) q P (0 ≦ q ≦ 1, 0 ≦ z ≦ 1) cladding layer(15), characterized in that a value of z is between 0.65 and 0.75.
Claim 8
Dependent Claim
15 words
The device of claim 5, wherein a value of q is between 0.45 and 0.55.
Claim 9
Dependent Claim
43 words
The device of claim 6, wherein the p-type In q (Ga 1 - z Al z ) q P (0 ≦ q ≦ 1, 0 ≦ z ≦ 1) cladding layer(15) has a carrier concentration between 2 x 10¹⁷cm⁻³ and 5 x 10¹⁷cm⁻³.
Claim 10
Dependent Claim
42 words
The device of claim 6, wherein the p-type In q (Ga 1 - z Al z ) q P (0 ≦ q ≦ 1, 0 ≦ z ≦ 1) cladding layer(15) has a photoluminescence peak wavelength between 530 nm and 550 nm.
Claim 11
Dependent Claim
44 words
The device of claim 5, wherein the double heterostructure further comprises n-type In q (Ga 1 - z Al z ) q P (0 ≦ q ≦ 1, 0 ≦ z ≦ 1) cladding layer(13) with a value of z between 0.65 and 0.75.
Claim 12
Dependent Claim
15 words
The device of claim 9, wherein a value of q is between 0.45 and 0.55.
Claim 13
Dependent Claim
42 words
The device of claim 10, wherein the p-type In q (Ga 1 - z Al z ) q P (0 ≦ q≦ 1, 0 ≦ z ≦ 1) cladding layer(15) has a carrier concentration between 2 x 10¹⁷cm⁻³ and 5 x 10¹⁷cm⁻³.
Claim 14
Dependent Claim
42 words
The device of claim 10, wherein the p-type In q (Ga 1 - z Al z ) q P (0 ≦ q ≦ 1, 0 ≦ z ≦ 1) cladding layer(15) has a photoluminescence peak wavelength between 530 nm and 550 nm.
Claim 15
Dependent Claim
59 words
A semiconductor laser device, comprising: a GaAs substrate(111); and a double heterostructure formed on the GaAs substrate(111), comprised of In x Ga y Al 1 - x - y P (0 ≦ x ≦ 1, 0 ≦ y ≦ 1) including an n-type cladding layer(113) and an p-type cladding layer(125), characterized in that the n-type cladding layer(113) is Si-doped.
Claim 16
Dependent Claim
59 words
A semiconductor laser device, comprising: a GaAs substrate(111); and a double heterostructure formed on the GaAs substrate(111), comprised of In x Ga y Al 1 - x - y P (0 ≦ x ≦ 1, 0 ≦ y ≦ 1) including an n-type cladding layer(113) and an p-type cladding layer(125), characterized in that the n-type cladding layer(113) is Si-doped.
Claim 17
Dependent Claim
20 words
The device of claim 13, wherein the Si-doped n-type cladding layer(113) has a carrier concentration less than 5 x 10¹⁷cm⁻³.
Claim 18
Dependent Claim
26 words
The device of claim 13, further comprising a n-type GaAs cuurrent block layer(117) in contant with the p-type cladding layer(125), the current block layer being Se-doped.
Claim 19
Independent Claim
79 words
A method of manufacturing semiconductor laser device comprising the steps of: placing GaAs substrate in a reaction chamber; heating up the GaAs substrate with raw material gases belonging to the group III and the group V; and forming on the GaAs substrate an n-type cladding layer, an active layer and a p-type cladding layer by MOCVD, characterized in that at the forming step the n-type cladding layer is formed with silane gas as a raw material for the dopant.
Claim 20
Independent Claim
79 words
A method of manufacturing semiconductor laser device comprising the steps of: placing GaAs substrate in a reaction chamber; heating up the GaAs substrate with raw material gases belonging to the group III and the group V; and forming on the GaAs substrate an n-type cladding layer, an active layer and a p-type cladding layer by MOCVD, characterized in that at the forming step the n-type cladding layer is formed with silane gas as a raw material for the dopant.
References Cited (Backward Citations)
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