Patent EP0326405A2 successfully refreshed from Google Patents.
EP0326405A2
Expired / Lapsed
EP
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Plasma chemical vapour reaction apparatus
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1989-01-27
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Granted: —
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Expires: 2009-01-27
Abstract
Abstract An improved plasma chemical vapour reaction apparatus is described. The apparatus comprises a reaction chamber (1,8), a gas feeding system (10,11) for introducing a reactive gas into the reaction chamber, Helmholtz coils (5) for inducing a magnetic field in the reaction chamber, a microwave generator (4) for inputting microwaves into the reaction chamber, and a substrate holder (3) for supporting a substrate (2) to be treated in the reaction chamber. The substrate holder is so located with respect to said magnetic field inducing means that the field strength gradient vector of the magnetic field induced by the Helmholtz coils is directed towards the substrate in the vicinity of the surface of the substrate to be treated. By virtue of the magnetic field characterized by such a gradient vector, the plasma gas in the reaction chamber is caused to drift towards the substrate.
Inventors
- 👤 Naoki Hirose
- 👤 Takashi Inshima
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-02 16:39
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32192; C; C23; C23C; C23C16/00; C23C16/44; C23C16/50; C23C16/511; H01J37/32357; H01J37/32431; H01J37/32623; H01J37/3266
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
114 words
A plasma chemical vapour reaction apparatus comprising; a reaction chamber; a gas supply system for introducing a reactive gas into said reaction chamber; a magnetic field inducing means for inducing a magnetic field in said reaction chamber; a microwave generator for inputting microwave energy into said reaction chamber; and a substrate holder for supporting a substrate to be treated in said reaction chamber; wherein said substrate holder is so located with respect to said magnetic field inducing means that the field strength gradient vector of the magnetic field induced by said magnetic field inducing means is directed towards said substrate in the vicinity of the surface of said substrate that is to be treated.
Claim 2
Dependent Claim
114 words
A plasma chemical vapour reaction apparatus comprising; a reaction chamber; a gas supply system for introducing a reactive gas into said reaction chamber; a magnetic field inducing means for inducing a magnetic field in said reaction chamber; a microwave generator for inputting microwave energy into said reaction chamber; and a substrate holder for supporting a substrate to be treated in said reaction chamber; wherein said substrate holder is so located with respect to said magnetic field inducing means that the field strength gradient vector of the magnetic field induced by said magnetic field inducing means is directed towards said substrate in the vicinity of the surface of said substrate that is to be treated.
Claim 3
Dependent Claim
18 words
The apparatus of claim 1 wherein said magnetic field inducing means comprises Helmholtz coils surrounding said reaction chamber.
Claim 4
Dependent Claim
38 words
The apparatus of claim 2 wherein said magnetic field inducing means further comprises Ioffe bars surrounding said reaction chamber in order to cause said gradient vector to be directed towards the centre of the substrate in said vicinity.
Claim 5
Dependent Claim
23 words
The apparatus of claim 3 wherein said Ioffe bars are arranged approximately along the magnetic field induced by said magnetic field inducing means.
Claim 6
Dependent Claim
79 words
A plasma processing method comprising; disposing a substrate in a reaction chamber; introducing a reactive gas into said reaction chamber which is subjected to a magnetic field; inputting to said reaction chamber microwave energy propagated approximately parallel to said magnetic field; producing a plasma gas by resonance between said reactive gas and the microwaves, wherein said plasma gas is pinched by said magnetic field about said substrate; and carrying out plasma processing with said plasma gas on said substrate.
Claim 7
Dependent Claim
79 words
A plasma processing method comprising; disposing a substrate in a reaction chamber; introducing a reactive gas into said reaction chamber which is subjected to a magnetic field; inputting to said reaction chamber microwave energy propagated approximately parallel to said magnetic field; producing a plasma gas by resonance between said reactive gas and the microwaves, wherein said plasma gas is pinched by said magnetic field about said substrate; and carrying out plasma processing with said plasma gas on said substrate.
Claim 8
Dependent Claim
31 words
A plasma chemical vapour reaction apparatus wherein the plasma chamber is subjected to a magnetic field having a field strength gradient directed to concentrate the plasma towards a predetermined reaction region.
Claim 9
Dependent Claim
31 words
A plasma chemical vapour reaction apparatus wherein the plasma chamber is subjected to a magnetic field having a field strength gradient directed to concentrate the plasma towards a predetermined reaction region.
References Cited (Backward Citations)
No citation records indexed.
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