EP0326018A2 — Semiconductor device comprising conductor films

Claim 1

Independent Claim 66 words

A semiconductor device having a semiconductor substrate (1) and a plurality of conductor films (2) formed on said substrate (1), each of said conductor films (2) being made of aluminum alloy including one element selected from palladium and platinum, with a protective film (3) which includes oxide of the selected one of palladium and platinum being formed on the side wall of said conductor film (2).

Claim 2

Dependent Claim 66 words

A semiconductor device having a semiconductor substrate (1) and a plurality of conductor films (2) formed on said substrate (1), each of said conductor films (2) being made of aluminum alloy including one element selected from palladium and platinum, with a protective film (3) which includes oxide of the selected one of palladium and platinum being formed on the side wall of said conductor film (2).

Claim 3

Dependent Claim 24 words

A semiconductor device according to claim 1, wherein said protective film (3) includes oxide of the selected one of palladium and platinum and carbon.

Claim 4

Dependent Claim 25 words

A semiconductor device according to claim 1, wherein said aluminum alloy has a principal component of aluminum and includes palladium by 5 weight-% or less.

Claim 5

Dependent Claim 17 words

A semiconductor device according to claim 1, wherein said protective film (3) includes palladium oxide and carbon.

Claim 6

Dependent Claim 40 words

A semiconductor device according to claim 1, wherein said aluminum alloy has a principal component of aluminum and includes palladium by 5 weight-% or less and silicon by 0.1-3 weight-%, and said protective film (3) includes palladium oxide and carbon.

Claim 7

Dependent Claim 76 words

A semiconductor device having a semiconductor substrate (1) and a plurality of conductor films (2) formed on said substrate (1), each of said conductor films (2) being made of aluminum alloy including one element selected from palladium and platinum, and having a line width of 1.3 µm or less, with a protective film (3) which includes oxide of the selected one of palladium and platinum being formed on the side wall of said conductor film (2).

Claim 8

Dependent Claim 76 words

A semiconductor device having a semiconductor substrate (1) and a plurality of conductor films (2) formed on said substrate (1), each of said conductor films (2) being made of aluminum alloy including one element selected from palladium and platinum, and having a line width of 1.3 µm or less, with a protective film (3) which includes oxide of the selected one of palladium and platinum being formed on the side wall of said conductor film (2).

Claim 9

Dependent Claim 35 words

A semiconductor device according to claim 6, wherein said aluminum alloy has a principal component of aluminum and includes palladium by 5 weight-% or less, and said protective film (3) includes palladium oxide and carbon.

Claim 10

Dependent Claim 80 words

A semiconductor device having a semiconductor substrate (1) and a plurality of conductor films (2) formed on said substrate, each of said conductor films (2) being made of aluminum alloy including palladium by 5 weight-% or less and having a line width of 1.3 µm or less and a line width vs. line spacing ratio of 1 or more, with a film (3) which includes palladium oxide and carbon being formed on the side wall of said conductor film (2).

Claim 11

Dependent Claim 80 words

A semiconductor device having a semiconductor substrate (1) and a plurality of conductor films (2) formed on said substrate, each of said conductor films (2) being made of aluminum alloy including palladium by 5 weight-% or less and having a line width of 1.3 µm or less and a line width vs. line spacing ratio of 1 or more, with a film (3) which includes palladium oxide and carbon being formed on the side wall of said conductor film (2).

Claim 12

Dependent Claim 88 words

A semiconductor device having a semiconductor substrate (1) and a plurality of conductor films (2) formed on said substrate (1), each of said conductor films (2) being made of aluminum alloy including palladium by 5 weight-% or less, with a film (3) which includes palladium oxide and carbon being formed on the side wall of said conductor films (2), said conductor films (2) having a line width of 1.3 µm or less which is substantially constant over the entire range of the height of said conductor film (2).

Claim 13

Dependent Claim 88 words

A semiconductor device having a semiconductor substrate (1) and a plurality of conductor films (2) formed on said substrate (1), each of said conductor films (2) being made of aluminum alloy including palladium by 5 weight-% or less, with a film (3) which includes palladium oxide and carbon being formed on the side wall of said conductor films (2), said conductor films (2) having a line width of 1.3 µm or less which is substantially constant over the entire range of the height of said conductor film (2).

Claim 14

Dependent Claim 33 words

A semiconductor device according to claim 9, wherein said conductor films (2) have a dimensional error of line width, measured along the height direction of conductor film (2), of 0.1 µm or less.

Claim 15

Dependent Claim 71 words

A semiconductor device having a semiconductor substrate (1) and a plurality of conductor films (2) formed on said substrate (1), each of said conductor films (2) being made of aluminum alloy including an element selected from palladium and platinum by 0.01-3weight-%, with a film (3) which includes oxide of the selected one of palladium and platinum yielding by dry etching being formed on the side wall of said conductor film (2).

Claim 16

Dependent Claim 71 words

A semiconductor device having a semiconductor substrate (1) and a plurality of conductor films (2) formed on said substrate (1), each of said conductor films (2) being made of aluminum alloy including an element selected from palladium and platinum by 0.01-3weight-%, with a film (3) which includes oxide of the selected one of palladium and platinum yielding by dry etching being formed on the side wall of said conductor film (2).

Claim 17

Dependent Claim 76 words

A semiconductor device having a semiconductor substrate (1) and a plurality of conductor films (2) formed on said substrate (1), each of said conductor films (2) being a sputtered film of aluminum alloy including an element selected from palladium and platinum by 0.01-3 weight-% or less, with a film (3) which includes oxide of the selected one of palladium and platinum yielded by dry etching being formed on the side wall of said conductor film (2).

Claim 18

Dependent Claim 76 words

A semiconductor device having a semiconductor substrate (1) and a plurality of conductor films (2) formed on said substrate (1), each of said conductor films (2) being a sputtered film of aluminum alloy including an element selected from palladium and platinum by 0.01-3 weight-% or less, with a film (3) which includes oxide of the selected one of palladium and platinum yielded by dry etching being formed on the side wall of said conductor film (2).

Claim 19

Dependent Claim 80 words

A semiconductor device having a semiconductor substrate (1) and a plurality of conductor films (2) formed on said substrate (1), each of said conductor films (2) being made of aluminum alloy including palladium by 5 weight-% or less, with precipitations of pure palladium or metallic compound thereof being dispersed on grain boundaries and in grains of said alloy, and with a film (3) which includes palladium oxide and carbon being formed on the side wall of said conductor film (2).

Claim 20

Dependent Claim 80 words

A semiconductor device having a semiconductor substrate (1) and a plurality of conductor films (2) formed on said substrate (1), each of said conductor films (2) being made of aluminum alloy including palladium by 5 weight-% or less, with precipitations of pure palladium or metallic compound thereof being dispersed on grain boundaries and in grains of said alloy, and with a film (3) which includes palladium oxide and carbon being formed on the side wall of said conductor film (2).

Claim 21

Dependent Claim 32 words

A semiconductor device according to claim 13, wherein said precipitations of pure palladium or metallic compound thereof being dispersed in 30% or more of areas of triple points of said grain boundaries.

Claim 22

Dependent Claim 18 words

A semiconductor device according to claim 14, wherein said precipitations have particle diameters of 0.3 µm or less.

Claim 23

Dependent Claim 94 words

A semiconductor device having a silicon substrate (1) and a plurality of conductor films (2) formed on said substrate (1), each of said conductor films (2) being made of aluminum alloy including an element selected from palladium and platinum by 5 weight-% or less, with a film (3) which includes oxide of the selected one of palladium and platinum being formed on the side wall of said conductor film (2), and with precipitations of compound of palladium with silicon being included on the interface between said conductor films (2) and said silicon substrate (1).

Claim 24

Dependent Claim 94 words

A semiconductor device having a silicon substrate (1) and a plurality of conductor films (2) formed on said substrate (1), each of said conductor films (2) being made of aluminum alloy including an element selected from palladium and platinum by 5 weight-% or less, with a film (3) which includes oxide of the selected one of palladium and platinum being formed on the side wall of said conductor film (2), and with precipitations of compound of palladium with silicon being included on the interface between said conductor films (2) and said silicon substrate (1).

Claim 25

Dependent Claim 100 words

A semiconductor device having a silicon substrate (1) and a plurality of conductor films (2) formed on said substrate (1), each of said conductor films being made of aluminum alloy including palladium by 5 weight-% or less, with a film (3) which includes palladium oxide yielded at conductor formation by dry etching being formed on the side wall of said conductor film (2), and with precipitations of aluminum silicide yielded as a coupling of said silicon substrate (1) and palladium in said conductor film (2) being included on the interface of said conductor films (2) and said silicon substrate (1).

Claim 26

Dependent Claim 100 words

A semiconductor device having a silicon substrate (1) and a plurality of conductor films (2) formed on said substrate (1), each of said conductor films being made of aluminum alloy including palladium by 5 weight-% or less, with a film (3) which includes palladium oxide yielded at conductor formation by dry etching being formed on the side wall of said conductor film (2), and with precipitations of aluminum silicide yielded as a coupling of said silicon substrate (1) and palladium in said conductor film (2) being included on the interface of said conductor films (2) and said silicon substrate (1).

Claim 27

Dependent Claim 123 words

A semiconductor device having a silicon substrate (1) and a plurality of conductor films (2) formed on said substrate (1), each of said conductor films (2) being made of aluminum alloy including palladium by 5 weight-% or less, with precipitations of pure palladium or metallic compound thereof being included in 30% or more of areas of grain boundary triple points of said alloy, with precipitations of palladium silicide yielded as a coupling of palladium in said conductor film (2) and silicon being included on the interface between said conductor films (2) and said silicon substrate (1), and with a film (3) which includes palladium oxide yielded at conductor formation by dry etching being formed on the side wall of said conductor film (2).

Claim 28

Dependent Claim 123 words

A semiconductor device having a silicon substrate (1) and a plurality of conductor films (2) formed on said substrate (1), each of said conductor films (2) being made of aluminum alloy including palladium by 5 weight-% or less, with precipitations of pure palladium or metallic compound thereof being included in 30% or more of areas of grain boundary triple points of said alloy, with precipitations of palladium silicide yielded as a coupling of palladium in said conductor film (2) and silicon being included on the interface between said conductor films (2) and said silicon substrate (1), and with a film (3) which includes palladium oxide yielded at conductor formation by dry etching being formed on the side wall of said conductor film (2).

Claim 29

Independent Claim 91 words

A method of fabricating a semiconductor device comprising the steps of: depositing, on a semiconductor substrate (1), a layer (2) of conductor film material of aluminum alloy including an element selected from palladium and platinum by 5 weight-% or less; conducting a heat process for the deposited layer (2) of conductor film material so that metallic compound between aluminum and the selected one of palladium and platinum is precipitated; and conducting a dry etching process for the heat-processed layer (2) of conductor film material to form an intended conductor film pattern.

Claim 30

Independent Claim 91 words

A method of fabricating a semiconductor device comprising the steps of: depositing, on a semiconductor substrate (1), a layer (2) of conductor film material of aluminum alloy including an element selected from palladium and platinum by 5 weight-% or less; conducting a heat process for the deposited layer (2) of conductor film material so that metallic compound between aluminum and the selected one of palladium and platinum is precipitated; and conducting a dry etching process for the heat-processed layer (2) of conductor film material to form an intended conductor film pattern.

Claim 31

Dependent Claim 28 words

A method according to claim 19, wherein said conductor film material comprises aluminum alloy having a principal component of aluminum and including palladium by 5 weight-% or less.

Claim 32

Dependent Claim 33 words

A method according to claim 19, wherein said conductor film material comprises aluminum alloy having a principal component of aluminum and including palladium by 5 weight-% or less and silicon by 0.1-3 weight-%.

Claim 33

Dependent Claim 15 words

A method according to claim 19, wherein said conductor film material is deposited by sputtering.

Claim 34

Dependent Claim 19 words

A method according to claim 19, wherein said conductor film material is deposited to a thickness of 0.5-1 µm.

Claim 35

Independent Claim 117 words

A method of fabricating a semiconductor device comprising the steps of: depositing, on a semiconductor substrate (1), a layer (2) of conductor film material of aluminum alloy including an element selected from palladium and platinum by 5 weight-% or less ; conducting a first-stage heat process of annealing for the deposited layer (2) of conductor film material; conducting a second-stage heat process for the heat-processed, in said first stage, layer (2) of conductor film material so that metallic compound between aluminum and the selected one of palladium and platinum is precipitated; and conducting a dry etching process for the heat-processed, in said second stage, layer (2) of conductor film material to form an intended conductor film pattern.

Claim 36

Independent Claim 117 words

A method of fabricating a semiconductor device comprising the steps of: depositing, on a semiconductor substrate (1), a layer (2) of conductor film material of aluminum alloy including an element selected from palladium and platinum by 5 weight-% or less ; conducting a first-stage heat process of annealing for the deposited layer (2) of conductor film material; conducting a second-stage heat process for the heat-processed, in said first stage, layer (2) of conductor film material so that metallic compound between aluminum and the selected one of palladium and platinum is precipitated; and conducting a dry etching process for the heat-processed, in said second stage, layer (2) of conductor film material to form an intended conductor film pattern.

Claim 37

Dependent Claim 19 words

A method according to claim 24, wherein said first-stage heat process is conducted at an annealing temperature of 200-500°C.

Claim 38

Dependent Claim 34 words

A method according to claim 24, wherein said second-stage heat process is conducted at a temperature of 350°C or lower, preferably 150-350°C, for the conductor film material which has undergone said first-stage heat process.

Claim 39

Dependent Claim 44 words

A method according to claim 24, wherein, in said dry etching process, a protective film (3) which includes oxide of the selected one of palladium and platinum is formed on the side wall of said conductor films (2) constituting the formed conductor film pattern.

Claim 40

Dependent Claim 130 words

A resin-molded semiconductor device comprising a semiconductor substrate (1), a plurality of conductor films (2) formed on said semiconductor substrate (1), lead frames (7) which mount said semiconductor substrate (1), metallic wires (6) for making electrical connection between said conductor films (2) and said lead frames (7), and resin (8) which seals surroundings of said semiconductor substrate (1), with said conductor film (2) being formed thereon, and said metallic wires (6), each of said conductor films (2) being made of aluminum alloy including palladium by 5 weight-% or less, with precipitations of compound between palladium and aluminum emerging in said alloy, and with a film (3) which includes palladium oxide yielded by dry etching at the formation of conductors being formed on the side wall of said conductor film (2).

Claim 41

Dependent Claim 130 words

A resin-molded semiconductor device comprising a semiconductor substrate (1), a plurality of conductor films (2) formed on said semiconductor substrate (1), lead frames (7) which mount said semiconductor substrate (1), metallic wires (6) for making electrical connection between said conductor films (2) and said lead frames (7), and resin (8) which seals surroundings of said semiconductor substrate (1), with said conductor film (2) being formed thereon, and said metallic wires (6), each of said conductor films (2) being made of aluminum alloy including palladium by 5 weight-% or less, with precipitations of compound between palladium and aluminum emerging in said alloy, and with a film (3) which includes palladium oxide yielded by dry etching at the formation of conductors being formed on the side wall of said conductor film (2).

Claim 42

Dependent Claim 24 words

A resin-molded semiconductor device according to claim 28, wherein said aluminum alloy has a principal component of aluminum and includes palladium by 0.01-3 weight-%.

Claim 43

Dependent Claim 29 words

A resin-molded semiconductor device according to claim 28, wherein said aluminum alloy has a principal component of aluminum and includes palladium by 0.01-3 weight-% and silicon by 0.1-3 weight-%.

Claim 44

Dependent Claim 52 words

A resin-molded semiconductor device according to claim 28, wherein said semiconductor substrate (1) is made of silicon, with precipitations of metallic compound yielded as a coupling of silicon in said substrate (1) and palladium in said conductor film (2) emerging on the interface between said substrate (1) and said conductor films (2).

Claim 45

Dependent Claim 96 words

A semiconductor device comprising a semiconductor substrate (1), a plurality of conductor films (2) formed on said semiconductor substrate (1), and metallic wires (6) for making electrical connection between said conductor films (2) and said lead frames (7), each of said conductor films (2) being made of aluminum alloy including palladium by 0.01-3 weight-%, with precipitations of compound between palladium and aluminum being included in said alloy, and with a film (3) which includes palladium oxide yielded by dry etching at the formation of conductors being formed on the side wall of said conductor film (2).

Claim 46

Dependent Claim 96 words

A semiconductor device comprising a semiconductor substrate (1), a plurality of conductor films (2) formed on said semiconductor substrate (1), and metallic wires (6) for making electrical connection between said conductor films (2) and said lead frames (7), each of said conductor films (2) being made of aluminum alloy including palladium by 0.01-3 weight-%, with precipitations of compound between palladium and aluminum being included in said alloy, and with a film (3) which includes palladium oxide yielded by dry etching at the formation of conductors being formed on the side wall of said conductor film (2).

Claim 47

Dependent Claim 19 words

A semiconductor device according to claim 32, wherein said metallic wires (6) are substantially made of copper or aluminum.

Claim 48

Dependent Claim 19 words

A semiconductor device according to claim 32, wherein said lead frames (7) are made of copper or iron-nickel alloy.

Claim 49

Dependent Claim 52 words

A semiconductor device according to claim 32, wherein said metallic (16) wire has at one end thereof a ball formed by melting in non-oxidative atmosphere, said ball being in electrical connection with said conductor film (2), said metallic wire (6) having another end connected to said lead frame (7) by wedge bonding.

Claim 50

Independent Claim 150 words

A method of fabricating a semiconductor device comprising the steps of: depositing a layer (2) of conductor film material of aluminum alloy including palladium on a semiconductor substrate (1) mounted on a lead frame (7); conducting a heat process for the deposited layer (2) of conductor film material so that compound between aluminum and palladium is precipitated; conducting a dry etching process for the heat-processed layer (2) of conductor film material to form an intended conductor film pattern and to form a protective film (3) including palladium oxide on the side walls of said conductor films (2) constituting said formed conductor film pattern; and connecting said conductor film (2) to said lead frame (7) using a metallic wire (6), said metallic wire (6) being connected with said conductor film (2) by forming a ball at the end of said wire (6) and press-connecting said ball to said conductor film (2).

Claim 51

Independent Claim 150 words

A method of fabricating a semiconductor device comprising the steps of: depositing a layer (2) of conductor film material of aluminum alloy including palladium on a semiconductor substrate (1) mounted on a lead frame (7); conducting a heat process for the deposited layer (2) of conductor film material so that compound between aluminum and palladium is precipitated; conducting a dry etching process for the heat-processed layer (2) of conductor film material to form an intended conductor film pattern and to form a protective film (3) including palladium oxide on the side walls of said conductor films (2) constituting said formed conductor film pattern; and connecting said conductor film (2) to said lead frame (7) using a metallic wire (6), said metallic wire (6) being connected with said conductor film (2) by forming a ball at the end of said wire (6) and press-connecting said ball to said conductor film (2).

Claim 52

Dependent Claim 66 words

A method according to claim 36, wherein said step of heat process comprises a first-stage heat process which heats said deposited layer (2) of conductor film material to 200-500°C and then cooled quickly, and a second-stage heat process which, after said first-stage heat process, heats said layer (2) to a temperature of 350°C or lower, preferably 150-350°C, so that compound between palladium and aluminum is precipitated.

Claim 53

Dependent Claim 60 words

A semiconductor device comprising a semiconductor substrate (1), and a plurality of conductor films (2) formed on said substrate (1), each of said conductor films (2) being made of aluminum alloy including an additive element, with a layer (3) of material which includes oxide of said additive element being formed along the side wall surface of said conductor film (2).

Claim 54

Dependent Claim 60 words

A semiconductor device comprising a semiconductor substrate (1), and a plurality of conductor films (2) formed on said substrate (1), each of said conductor films (2) being made of aluminum alloy including an additive element, with a layer (3) of material which includes oxide of said additive element being formed along the side wall surface of said conductor film (2).

Claim 55

Dependent Claim 54 words

A semiconductor device comprising a semiconductor substrate (1), and a plurality of conductor films (2) formed on said substrate (1), each of said conductor films (2) being made of aluminum alloy including palladium, with a protective layer (3) which includes palladium oxide and carbon being formed on the side wall of said conductor film.

Claim 56

Dependent Claim 54 words

A semiconductor device comprising a semiconductor substrate (1), and a plurality of conductor films (2) formed on said substrate (1), each of said conductor films (2) being made of aluminum alloy including palladium, with a protective layer (3) which includes palladium oxide and carbon being formed on the side wall of said conductor film.

Claim 57

Dependent Claim 20 words

A semiconductor device according to claim 39, wherein said protective film (3) has a thickness of 100 nm or less.

Claim 58

Dependent Claim 56 words

A semiconductor device comprising a semiconductor substrate (1), and a plurality of conductor films (2) formed on said substrate, each of said conductor films (2) being made of aluminum alloy including a little palladium, with a protective layer (3) which includes palladium oxide and carbon being formed on the side wall of said conductor film (2).

Claim 59

Dependent Claim 56 words

A semiconductor device comprising a semiconductor substrate (1), and a plurality of conductor films (2) formed on said substrate, each of said conductor films (2) being made of aluminum alloy including a little palladium, with a protective layer (3) which includes palladium oxide and carbon being formed on the side wall of said conductor film (2).

Claim 60

Dependent Claim 79 words

A semiconductor device comprising a semiconductor substrate (181) incorporating a large-scale integration circuit, a plurality of conductor films (2) formed on said substrate (181), a supporting plate (185) which mounts said substrate (181), and an electrically insulating cap (184) which provides a hermetic seal for said substrate (181) and conductor films (2), each of said conductor films (2) having a line width of 1.3 µm or less, with side walls thereof being cut in rectangular or virtually rectangular profile.

Claim 61

Dependent Claim 79 words

A semiconductor device comprising a semiconductor substrate (181) incorporating a large-scale integration circuit, a plurality of conductor films (2) formed on said substrate (181), a supporting plate (185) which mounts said substrate (181), and an electrically insulating cap (184) which provides a hermetic seal for said substrate (181) and conductor films (2), each of said conductor films (2) having a line width of 1.3 µm or less, with side walls thereof being cut in rectangular or virtually rectangular profile.

Claim 62

Dependent Claim 92 words

A semiconductor device comprising a semiconductor substrate (181) incorporating a large-scale integration circuit, a plurality of conductor films (2) formed on said substrate (181), a supporting plate (185) which mounts said substrate (181), and an electrically insulating cap (184) which provides a hermetic seal for said substrate (181) and conductor films (2), each of said conductor films (2) having a line width of 1.3 µm or less and a line width vs. line spacing ratio of 1 or more, with the side wall thereof being cut in rectangular or virtually rectangular profile.

Claim 63

Dependent Claim 92 words

A semiconductor device comprising a semiconductor substrate (181) incorporating a large-scale integration circuit, a plurality of conductor films (2) formed on said substrate (181), a supporting plate (185) which mounts said substrate (181), and an electrically insulating cap (184) which provides a hermetic seal for said substrate (181) and conductor films (2), each of said conductor films (2) having a line width of 1.3 µm or less and a line width vs. line spacing ratio of 1 or more, with the side wall thereof being cut in rectangular or virtually rectangular profile.

Claim 64

Independent Claim 48 words

A method of fabricating a semiconductor device comprising the steps of depositing a conductor film (2) material on a semiconductor substrate (181), and cutting said conductor film material to have a specified line width, said step of deposition being followed by a heat process and thereafter dry etching.

Claim 65

Independent Claim 48 words

A method of fabricating a semiconductor device comprising the steps of depositing a conductor film (2) material on a semiconductor substrate (181), and cutting said conductor film material to have a specified line width, said step of deposition being followed by a heat process and thereafter dry etching.

Claim 66

Dependent Claim 75 words

A semiconductor integrated circuit comprising a semiconductor substrate (181) and an integrated circuit in DRAM configuration including memory elements of 4 M bits or more formed on said semiconductor substrate (181) and a plurality of conductor films (2) connected with said memeory elements,each of said conductor films (2) being made of aluminum alloy including palladium, wtih a protective film (3) which includes palladium oxide being formed on the side wall of said conductor film (2).

Claim 67

Dependent Claim 75 words

A semiconductor integrated circuit comprising a semiconductor substrate (181) and an integrated circuit in DRAM configuration including memory elements of 4 M bits or more formed on said semiconductor substrate (181) and a plurality of conductor films (2) connected with said memeory elements,each of said conductor films (2) being made of aluminum alloy including palladium, wtih a protective film (3) which includes palladium oxide being formed on the side wall of said conductor film (2).

Claim 68

Dependent Claim 75 words

A semiconductor integrated circuit comprising a semiconductor substrate (181) and an integrated circuit in SRAM configuration including memory elements of 1 M bits or more formed on said semiconductor substrate (181) and a plurality of conductor films (2) connected with said memory elements, each of said conductor films (2) being made of aluminum alloy including palladium, with a protective film (3) which includes palladium oxide being formed on the side wall of said conductor film.

Claim 69

Dependent Claim 75 words

A semiconductor integrated circuit comprising a semiconductor substrate (181) and an integrated circuit in SRAM configuration including memory elements of 1 M bits or more formed on said semiconductor substrate (181) and a plurality of conductor films (2) connected with said memory elements, each of said conductor films (2) being made of aluminum alloy including palladium, with a protective film (3) which includes palladium oxide being formed on the side wall of said conductor film.

Claim 70

Dependent Claim 105 words

A semiconductor device comprising a semiconductor substrate (1) and a plurality of conductor films (2) formed on said semiconductor substrate (1), each of said wiring films (2) being made of aluminum alloy including a first additive element selected from palladium and platinum by 5 weight-% or less and at least one second additive element selected from lithium, beryllium, magnesium, manganese, iron, cobalt, nickel, copper, lanthanum, cerium, chrome, hafunium, zirconium, cadmium, titanium, tungsten, vanadium, tantalum, and niobium by 5 weight-% or less, with a protective film (3) which includes oxide of said first additive element being formed on the side wall of said conductor film (2).

Claim 71

Dependent Claim 105 words

A semiconductor device comprising a semiconductor substrate (1) and a plurality of conductor films (2) formed on said semiconductor substrate (1), each of said wiring films (2) being made of aluminum alloy including a first additive element selected from palladium and platinum by 5 weight-% or less and at least one second additive element selected from lithium, beryllium, magnesium, manganese, iron, cobalt, nickel, copper, lanthanum, cerium, chrome, hafunium, zirconium, cadmium, titanium, tungsten, vanadium, tantalum, and niobium by 5 weight-% or less, with a protective film (3) which includes oxide of said first additive element being formed on the side wall of said conductor film (2).

Claim 72

Dependent Claim 48 words

A semiconductor device according to claim 47, wherein said first additive element forms metallic compound with aluminum, with precipitations with particle diameters of 0.3 µm or less dispersing on grain boundaries, and with at least one of said second additive elements forming solid solution in the aluminum matrix.

Claim 73

Dependent Claim 29 words

A semiconductor device according to claim 48, wherein precipitations of the selected at least one of said second additive elements emerge on grain boundaries or in the aluminum matrix.

Claim 74

Independent Claim 175 words

A method of fabricating a semiconductor device comprising the steps of: depositing, on a semiconductor substrate (1) a layer (2) of conductor film material of aluminum alloy including a first additive element selected from palladium and platinum by 5 weight-% or less and at least one second additive element selected from lithium, beryllium, magnesium, manganese, iron, cobalt, nickel, copper, lanthanum, cerium, chrome, hafunium, zirconium, cadmium, titanium, tungsten, vanadium, tantalum, and niobium by 5 weight-% or less; conducting a first-stage heat process for annealing the deposited layer (2) of conductor film material at 200-500°C for 10 minutes and thereafter cooling said layer quickly at a rate of 10°C/sec; conducting a second-stage heat process which includes a step of heating the heat-processed, in said first-stage, layer (2) of conductor film material at a temperature of 350°C or lower and a step of re-heating said layer at said annealing temperature for 10 minutes or shorter; and conducting a dry etching for the heat-processed, in said second-stage, layer (2) of conductor film material to form an intended conductor pattern.

Claim 75

Independent Claim 175 words

A method of fabricating a semiconductor device comprising the steps of: depositing, on a semiconductor substrate (1) a layer (2) of conductor film material of aluminum alloy including a first additive element selected from palladium and platinum by 5 weight-% or less and at least one second additive element selected from lithium, beryllium, magnesium, manganese, iron, cobalt, nickel, copper, lanthanum, cerium, chrome, hafunium, zirconium, cadmium, titanium, tungsten, vanadium, tantalum, and niobium by 5 weight-% or less; conducting a first-stage heat process for annealing the deposited layer (2) of conductor film material at 200-500°C for 10 minutes and thereafter cooling said layer quickly at a rate of 10°C/sec; conducting a second-stage heat process which includes a step of heating the heat-processed, in said first-stage, layer (2) of conductor film material at a temperature of 350°C or lower and a step of re-heating said layer at said annealing temperature for 10 minutes or shorter; and conducting a dry etching for the heat-processed, in said second-stage, layer (2) of conductor film material to form an intended conductor pattern.

Semiconductor device comprising conductor films

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