Patent EP0323549A2 successfully refreshed from Google Patents.
EP0323549A2
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Bipolar semiconductor device having a conductive recombination layer
Assignee: Motorola Solutions Inc
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Filing: 1988-09-29
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Granted: —
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Expires: 2008-09-29
Abstract
Abstract A semiconductor device having a conductive recombination layer (22). The conductive recombination layer (22), comprised of doped polycrystalline material, doped polycrystalline material and tungsten silicide, or tungsten silicide, is disposed between two separate semiconductor substrates (10, 16) which are bonded together using a polished surface on the conductive recombination layer (22) as one of the bonding interfaces. The conductive recombination layer (22) recombines minority carriers and thereby increases the switching speed of the device.
Inventors
- 👤 Israel Arnold Lesk
- 👤 Lowell Eugene Clark
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 13:52
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/50; H10D62/53; H10D62/10; H10D62/13; H10D62/137; H10W; H10W15/00; H10W15/01
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
84 words
A semiconductor device having a conductive recombination layer (22) comprising: a collector, said collector comprising: a first doped semiconductor substrate (10) including a first surface (12) and a second surface (14); a second doped semiconductor substrate (16) including a first surface (18) and a second surface (20); the invention being characterized by: a conductive recombination layer (22) disposed between said first (10) and second (16) substrates and further being contiguous to said first (10) and second (16) substrates at their first surfaces (12, 18).
Claim 2
Dependent Claim
84 words
A semiconductor device having a conductive recombination layer (22) comprising: a collector, said collector comprising: a first doped semiconductor substrate (10) including a first surface (12) and a second surface (14); a second doped semiconductor substrate (16) including a first surface (18) and a second surface (20); the invention being characterized by: a conductive recombination layer (22) disposed between said first (10) and second (16) substrates and further being contiguous to said first (10) and second (16) substrates at their first surfaces (12, 18).
Claim 3
Dependent Claim
18 words
The device of claim 1 wherein the conductive recombination layer (22) is comprised of a doped polycrystalline material.
Claim 4
Dependent Claim
40 words
The device of claim 1 wherein the recombination layer (22) comprises: a first doped polycrystalline layer (24); a second doped polycrystalline layer (28); and a tungsten silicide layer (26) disposed between said first (24) and second (28) doped polycrystalline layers.
Claim 5
Dependent Claim
15 words
The device of claim 1 wherein the recombination layer (22) is comprised of tungsten silicide.
Claim 6
Independent Claim
106 words
A method of fabricating a bipolar semiconductor device having a conductive recombination layer (22) comprising the steps of: providing a first doped semiconductor substrate (10) having a first surface (12) and a second surface (14); providing a second doped semiconductor substrate (16) having a first surface (18) and a second surface (20); the invention being characterized by: forming a conductive recombination layer (22) on said first surface (12, 18) of one of said first (10) and second (16) semiconductor substrates; and bonding said first surface (12, 18) of the remaining one of said first (10) and second (16) semiconductor substrates to said conductive recombination layer (22).
Claim 7
Independent Claim
106 words
A method of fabricating a bipolar semiconductor device having a conductive recombination layer (22) comprising the steps of: providing a first doped semiconductor substrate (10) having a first surface (12) and a second surface (14); providing a second doped semiconductor substrate (16) having a first surface (18) and a second surface (20); the invention being characterized by: forming a conductive recombination layer (22) on said first surface (12, 18) of one of said first (10) and second (16) semiconductor substrates; and bonding said first surface (12, 18) of the remaining one of said first (10) and second (16) semiconductor substrates to said conductive recombination layer (22).
Claim 8
Dependent Claim
23 words
The method of claim 5 wherein the step of forming a conductive recombination layer (22) includes forming a doped polycrystalline recombination layer (22).
Claim 9
Dependent Claim
53 words
The method of claim 5 wherein the step of forming a conductive recombination layer (22) comprises the steps of: forming a first doped polycrystalline layer (24); forming a tungsten silicide layer (26) on said first doped polycrystalline layer (24); and forming a second doped polycrystalline layer (28) on said tungsten silicide layer (26).
Claim 10
Dependent Claim
22 words
The method of claim 5 wherein the step of forming a conductive recombination layer (22) includes forming a tungsten silicide recombination layer.
Claim 11
Independent Claim
123 words
A method of fabricating a bipolar semiconductor device having a conductive recombination layer (22) comprising the steps of: providing a first doped semiconductor substrate (10) having a polished first surface (12) and a second surface (14); providing a second doped semiconductor substrate (16) having a first surface (18) and a second surface (20) which are parallel to each other, said second semiconductor substrate (16) further having a greater dopant concentration than said first substrate (10); the invention being characterized by: forming a conductive recombination layer (22) on said first surface (18) of said second semiconductor substrate (16); polishing said conductive recombination layer (22); and bonding said polished conductive recombination layer (22) to said polished first surface (12) of said first semiconductor substrate (10).
Claim 12
Independent Claim
123 words
A method of fabricating a bipolar semiconductor device having a conductive recombination layer (22) comprising the steps of: providing a first doped semiconductor substrate (10) having a polished first surface (12) and a second surface (14); providing a second doped semiconductor substrate (16) having a first surface (18) and a second surface (20) which are parallel to each other, said second semiconductor substrate (16) further having a greater dopant concentration than said first substrate (10); the invention being characterized by: forming a conductive recombination layer (22) on said first surface (18) of said second semiconductor substrate (16); polishing said conductive recombination layer (22); and bonding said polished conductive recombination layer (22) to said polished first surface (12) of said first semiconductor substrate (10).
Claim 13
Dependent Claim
46 words
The method of claim 9 wherein the recombination layer (22) is doped by diffusing a phosphorous dopant, said dopant being diffused to also give the second semiconductor substrate (16) a doping concentration which is greater at its first surface (18) than at its second surface (20).
References Cited (Backward Citations)
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