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EP0323342A2
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A semiconductor substrate having a superconducting thin film
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1988-12-26
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Granted: —
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Expires: 2008-12-26
Abstract
Abstract A semiconductor substrate comprising an oxide substrate such as MgO or SrTiO₃, a superconducting thin film layer composed of compound oxide such as Ln₁Ba₂Cu₃O 7-δ (Ln is lanthanide) and deposited on said oxide substrate, and a semiconductor layer composed of compound semiconductor material such as GaAs and deposited on said superconducting thin film layer.
Inventors
- 👤 Hideo Itami Works Of Sumitomo Itozaki
- 👤 Keizo Itami Works Of Sumitomo Harada
- 👤 Naoji Itami Works Of Sumitomo Fujimori
- 👤 Shuji Itami Works Of Sumitomo Yazu
- 👤 Tetsuji Itami Works Of Sumitomo Jodai
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 03:57
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2921; H10N; H10N60/00; H10N60/01; H10N60/0268; H10N60/0661; H10N60/0716; H10N60/20; H10N60/203; H10P14/32; H10P14/3202; H10P14/3241; H10P14/3242; H10P14/3244; H10P14/3248; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/064; H10W20/40; H10W20/41; H10W20/44; H10W20/4484
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
39 words
A semiconductor substrate comprising an oxide substrate, a superconducting thin film layer composed of compound oxide and deposited on said oxide substrate, and a semiconductor layer composed of compound semiconductor material and deposited on said superconducting thin film layer.
Claim 2
Dependent Claim
39 words
A semiconductor substrate comprising an oxide substrate, a superconducting thin film layer composed of compound oxide and deposited on said oxide substrate, and a semiconductor layer composed of compound semiconductor material and deposited on said superconducting thin film layer.
Claim 3
Dependent Claim
34 words
A semiconductor substrate set forth in Claim 1, characterized in that said compound semiconductor material is selected from a group comprising GaAs, InP, InSb, ZnSe, CdTe, SiC, GaP, HgCdTe, GaAlAs, GaInAs, InAlAs and InGaAsP.
Claim 4
Dependent Claim
28 words
A semiconductor substrate set forth in Claim 1 or 2, characterized in that a buffer layer is interposed between said superconducting thin film layer and said semiconductor layer.
Claim 5
Dependent Claim
28 words
A semiconductor substrate set forth in Claim 3, characterized in that the lattice parameter of said buffer layer is similar to the lattice parameter of said semiconductor layer.
Claim 6
Dependent Claim
20 words
A semiconductor substrate set forth in Claim 3 or 4, characterized in that said buffer layer is made of platinum.
Claim 7
Dependent Claim
76 words
A semiconductor substrate set forth in any one of Claim 1 to 5, characterized in that said superconducting thin film layer is composed of a compound oxide of at least one element α selected from IIa group of the Periodic Table, at least one element β selected from IIIa group of the Periodic Table and at least one element γ selected from a group comprising Ib, IIb, IIIb, IVa and VIIIa groups of the Periodic Table.
Claim 8
Dependent Claim
110 words
A semiconductor substrate set forth in Claim 6, characterized in that said superconducting thin film layer is composed mainly of a compound oxide represented by the general formula: (α 1-x β x )γ y O z in which α, β and γ have the same definition as above, x is an atomic ratio of β with respect to (α+β) and has a range of 0.1 ≦ x ≦ 0.9, and y and z are respective atomic ratios with respect to (α 1-x β x ) which is considered to be equal to 1 and each satisfies ranges of 0.4 ≦ y ≦ 3.0 and 1 ≦ z ≦ 5 respectively.
Claim 9
Dependent Claim
40 words
A semiconductor substrate set forth in Claim 7, characterized in that said superconducting thin film layer is composed of a compound oxide represented by the general formula: (La 1-x α x )₂CuO₄ in which α stands for Ba or Sr.
Claim 10
Dependent Claim
36 words
A semiconductor substrate set forth in any one of Claim 6 to 8, characterized in that said superconducting thin film layer is composed of an oxide having perovskite typo or oxygen deficient perovskite type crystalline structure.
Claim 11
Dependent Claim
73 words
A semiconductor substrate set forth in Claim 6, characterized in that said superconducting thin film layer is composed mainly of a compound oxide represented by the general formula: Ln₁Ba₂Cu₃O 7-δ in which Ln stands for at least one lanthanide element selected from a group comprising La, Nd, Sm, Eu, Gd, Dy, Ho, Y, Er, Yb, Tm and Lu and δ is a number which satisfies a range of 0 ≦ δ < 1.
Claim 12
Dependent Claim
19 words
A superconducting substrate set forth in Claim 10, characterized in that the Ln is Y, Er, Ho or Dy.
Claim 13
Dependent Claim
36 words
A superconducting substrate set forth in Claim 10 or 11, characterized in that said compound oxide contain further at least one of element selected from a group comprising Al, Fe, Co, Ni, Zn, Ag and Ti.
Claim 14
Dependent Claim
116 words
A semiconductor substrate set forth in Claim 6, characterized in that said superconducting thin film layer is composed mainly of a compound oxide represented by the general formula: Θ₄(Φ 1-q , Ca q ) m Cu n O p+r in which Θ stands for Bi or Tl, Φ stands for Sr when Θ is Bi and stands for Ba when Θ is Tl, m and n are numbers each satisfying ranges of 6 ≦ m ≦ 10 and 4 ≦ n ≦ 8 respectively, p = (6+m+n), 1 is a number which satisfies a range of 0 < q < 1, and r is a number which satisfies a range of -2 ≦ r ≦ +2.
Claim 15
Dependent Claim
32 words
A semiconductor substrate set forth in any one of Claim 1 to 13, characterized in that said oxide substrate is made of single crystal of MgO, SrTiO₃, Al₂O₃, LiNbO₃, LiTaO₃ or ZrO₂.
Claim 16
Dependent Claim
74 words
A process for producing a semiconductor substrate comprising an oxide substrate, a superconducting thin film layer composed of compound oxide and deposited on said oxide substrate, and a semiconductor layer composed of compound semiconductor material and deposited on said superconducting thin film layer, characterized in that said superconducting thin film layer is deposited by physical vapour deposition technique or chemical vapour deposition technique, while said semiconductor layer is deposited by chemical vapour deposition technique.
Claim 17
Dependent Claim
74 words
A process for producing a semiconductor substrate comprising an oxide substrate, a superconducting thin film layer composed of compound oxide and deposited on said oxide substrate, and a semiconductor layer composed of compound semiconductor material and deposited on said superconducting thin film layer, characterized in that said superconducting thin film layer is deposited by physical vapour deposition technique or chemical vapour deposition technique, while said semiconductor layer is deposited by chemical vapour deposition technique.
Claim 18
Dependent Claim
17 words
A process set forth in Claim 15, characterized in that said physical vapour deposition technique is sputtering.
Claim 19
Dependent Claim
29 words
A process set forth in Claim 15 or 16, characterized in that a buffer layer is deposited on the superconducting thin film layer before said semiconductor layer is deposited.
Claim 20
Dependent Claim
24 words
A process set forth in Claim 18, characterized in that said buffer layer is a layer of platinum deposited by physical vapour deposition technique.
Claim 21
Dependent Claim
37 words
A process set forth in any one of Claim 15 to 18, characterized in that said superconducting thin film layer is heat-treated in oxygen-containing atmosphere or is exposed to oxygen plasma before said semiconductor layer is deposited.
Claim 22
Dependent Claim
75 words
A process set forth in any one of Claim 15 to 19, characterized in that said superconducting thin film layer is composed of a compound oxide of at least one element α selected from IIa group of the Periodic Table, at least one element β selected from IIIa group of the Periodic Table and at least one element γ selected from a group comprising Ib, IIb, IIIb, IVa and VIIIa groups of the Periodic Table.
Claim 23
Dependent Claim
40 words
A process set forth in Claim 20, characterized in that said superconducting thin film layer is composed mainly of a compound oxide represented by the general formula: (La 1-x α x )₂CuO₄ in which α stands for Ba or Sr.
Claim 24
Dependent Claim
72 words
A process set forth in Claim 20, characterized in that said superconducting thin film layer is composed mainly of a compound oxide represented by the general formula: Ln₁Ba₂Cu₃O 7-δ in which Ln stands for at least one lanthanide element selected from a group comprising La, Nd, Sm, Eu, Gd, Dy, Ho, Y, Er, Yb, Tm and Lu and δ is a number which satisfies a range of 0 ≦ δ < 1.
Claim 25
Dependent Claim
120 words
A process set forth in any one of Claim 15 to 19, characterized in that said superconducting thin film layer is composed mainly of a compound oxide represented by the general formula: Θ₄(Φ 1-q , Ca q ) m Cu n O p+r in which Θ stands for Bi or Tl, Φ stands for Sr when Θ is Bi and stands for Ba when Θ is Tl, m and n are numbers each satisfying ranges of 6 ≦ m ≦ 10 and 4 ≦ n ≦ 8 respectively, p = (6+m+n), q is a number which satisfies a range of 0 < q < 1, and r is a number which satisfies a range of -2 ≦ r ≦ +2.
Claim 26
Dependent Claim
31 words
A process set forth in any one of Claim 15 to 23, characterized in that said oxide substrate is made of single crystal of MgO, SrTiO₃, Al₂O₃, LiNbO₃, LiTaO₃ or ZrO₂.
Claim 27
Dependent Claim
37 words
A process set forth in any one of Claim 15 to 24, characterized in that said semiconductor material is selected from a group comprising GaAs, InP, InSb, ZnSe, CdTe, SiC, GaP, HgCdTe, GaAlAs, GaInAs, InAlAs and InGaAsP.
References Cited (Backward Citations)
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