Positive-working photoresist compositions and use thereof for forming positive-tone relief images

Abstract

Abstract In dry development by selective silylation and dry etching, a positive photosensitive resist material which is sensitive to a beam of deep UV radiation is used to form a positive resist pattern. The positive photosensitive resist material contains a resin having a phenolic hydroxyl group such as a novolac resin and a compound having, within the molecule, an aromatic ring having a sulphonyl halide group but not having a phenolic hydroxyl group, such as a 1,2-quinone diazide sulphonyl halide. A method of forming a positive resist pattern comprises coating a substrate with the positive photosensitive resist material, exposing the determined pattern to the substrate with a beam of deep UV radiation, thereafter selectively silylating the unexposed region, then dry etching using an oxygen plasma with the silylated region used as a mask. A fine resist pattern, which is suitable as the mask in the semiconductor manufacturing process and has excellent dry etching resistivity, can be formed easily.

Inventors

• 👤 Hiroyuki Fujitsu Limited Tanaka

Bibliographic Details